20nf20
Abstract: 20NF2 STD20NF20
Text: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω
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STD20NF20
STF20NF20
STP20NF20
DPAK/TO-220/TO-220FP
O-220FP
O-220
20nf20
20NF2
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20nf20
Abstract: 20NF2 200v mosfet STD20NF20 st 20nf20
Text: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω
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STD20NF20
STF20NF20
STP20NF20
DPAK/TO-220/TO-220FP
O-220FP
O-220
20nf20
20NF2
200v mosfet
st 20nf20
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20NF2
Abstract: 20nf20 ct 1061 STF20NF20 L6PR STP20NF20 JESD97 STD20NF20
Text: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω
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STD20NF20
STF20NF20
STP20NF20
DPAK/TO-220/TO-220FP
STF20NF20
O-220
O-220FP
20NF2
20nf20
ct 1061
L6PR
STP20NF20
JESD97
STD20NF20
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IRF640
Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■
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IRF640
IRF640FP
O-220/TO-220FP
O-220
O-220FP
IRF640
IRF640FP
ST IRF640
IRF640 circuit
JESD97
power MOSFET IRF640 fp
IRF640 morocco
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IRF640
Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
Text: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■
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IRF640
IRF640FP
O-220/TO-220FP
O-220
O-220FP
IRF640
IRF640 applications note
circuit using irf640
power MOSFET IRF640
IRF640FP
IRF640 mosfet
JESD97
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20NF2
Abstract: 20nf20
Text: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω
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STD20NF20
STF20NF20
STP20NF20
DPAK/TO-220/TO-220FP
O-220FP
O-220
20NF2
20nf20
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20NF2
Abstract: 20NF20 STD20NF20 STF20NF20 STP20NF20 JESD97
Text: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω • Exceptional dv/dt capability
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STD20NF20
STF20NF20
STP20NF20
DPAK/TO-220/TO-220FP
STF20NF20
O-220
O-220FP
20NF2
20NF20
STD20NF20
STP20NF20
JESD97
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18a marking sot23
Abstract: 18a sot23 marking 18A MMBZ5221B 18a marking marking 18a sot23
Text: SEMICONDUCTOR MMBZ5221B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 18A No. 1 Item Marking Device Mark 18A MMBZ5221B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5221B
OT-23
18a marking sot23
18a sot23
marking 18A
MMBZ5221B
18a marking
marking 18a sot23
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Untitled
Abstract: No abstract text available
Text: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/11716403/3000 mm 84013035 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance
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8A/11N468/11716403/3000
XXXXXXXX/08
4511Teg/st
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Untitled
Abstract: No abstract text available
Text: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/11N468/1500 mm 84013029 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance
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8A/11N468/11N468/1500
XXXXXXXX/08
4511Teg/st
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Untitled
Abstract: No abstract text available
Text: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/11N468/3000 mm 84013031 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance
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8A/11N468/11N468/3000
XXXXXXXX/08
4511Teg/st
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Santoprene
Abstract: suco
Text: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/21N409/1500 mm 84013030 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance
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8A/11N468/21N409/1500
XXXXXXXX/08
4511Teg/st
Santoprene
suco
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Untitled
Abstract: No abstract text available
Text: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/21716403/3000 mm 84013036 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance
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8A/11N468/21716403/3000
XXXXXXXX/08
4511Teg/st
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Untitled
Abstract: No abstract text available
Text: HUBER+SUHNER SUCOTEST 18A - the outdoor TEST+MEASUREMENT cable assembly Part no.: Item no.: SUCOTEST 18A/11N468/21716403/1500 mm 84013034 Electrical specifications Impedance Operating frequency Velocity of propagation Capacitance Time delay Insulation resistance
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8A/11N468/21716403/1500
XXXXXXXX/08
4511Teg/st
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STGF12NB60KD
Abstract: JESD97 STGB12NB60KD STGP12NB60KD
Text: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V
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STGB12NB60KD
STGF12NB60KD
STGP12NB60KD
O-220
O-220FP
STGF12NB60KD
O-220FP
O-220
JESD97
STGB12NB60KD
STGP12NB60KD
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st 393
Abstract: JESD97 STGB12NB60KD STGP12NB60KD schematic diagram UPS
Text: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V
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STGB12NB60KD
STGF12NB60KD
STGP12NB60KD
O-220
O-220FP
STGF12NB60KD
O-220FP
O-220
st 393
JESD97
STGB12NB60KD
STGP12NB60KD
schematic diagram UPS
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DH2x60-18A
Abstract: DH2x61-18A diode MARKING CODE 18A Minibloc m4x8 M4x8 DH2X6
Text: DH2x60-18A tentative V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A tbd ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package:
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DH2x60-18A
60747and
DH2x60-18A
DH2x61-18A
diode MARKING CODE 18A
Minibloc m4x8
M4x8
DH2X6
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Untitled
Abstract: No abstract text available
Text: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8870
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Untitled
Abstract: No abstract text available
Text: FDS8870 N-Channel PowerTrench MOSFET tm 30V, 18A, 4.2mΩ Features General Description ̈ rDS on = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8870
FDS8870
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FDS8870
Abstract: No abstract text available
Text: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8870
FDS8870
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Untitled
Abstract: No abstract text available
Text: DH2x60-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A 230 ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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DH2x60-18A
60747and
20110311a
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Untitled
Abstract: No abstract text available
Text: DH2x61-18A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs 1800 V 60 A 230 ns Part number DH2x61-18A Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips
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DH2x61-18A
60747and
20110908b
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Untitled
Abstract: No abstract text available
Text: FDS8672S N-Channel tm PowerTrench SyncFET 30V, 18A, 4.8mΩ Features General Description ̈ Max rDS on = 4.8mΩ at VGS = 10V, ID = 18A The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V
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FDS8672S
FDS8672S
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FDS8870
Abstract: No abstract text available
Text: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8870
FDS8870
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