multicomp sma
Abstract: transistor D1710 brass jis c3604 SMA jack 19-70-TGG COPPER C3604 d1710 B196 C17300 JIS-C3604
Text: REVISIONS PART NO. 19-70-TGG ECN # REV DESCRIPTION - A RELEASED DRAWN DATE Sumana 31/1/08 CHECKD DATE APPRVD DATE Suresh 31/1/08 G. C 15/2/08 Dimensions : Millimetres Inches This data sheet and its contents (the "Information") belong to the Premier Farnell Group
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Original
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19-70-TGG
M10000686
19-70-TGG
multicomp sma
transistor D1710
brass jis c3604
SMA jack
COPPER C3604
d1710
B196
C17300
JIS-C3604
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PDF
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D0005M
Abstract: G000557
Text: IB M 1 1 S 1 3 2 0 B N IB M 1 1 S 1 3 2 0 B L 1M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 20ns t/VA Access Time From Address 30ns 35ns
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72-Pin
110ns
130ns
128ms
0000S5Û
IBM11S1320BN
IBM11S1320BL
1Mx32
03H7113
SA14-4452-01
D0005M
G000557
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PDF
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TGUI9680
Abstract: tgui96 wram
Text: TGUI9680 6.0 PRELIMINARY Electrical Specifications This section describes the specifications of the TGUI9680. The following topics are discussed: 6.1 Absolute Maximum Ratings 6.2 DC Specifications 6.3 AC Specifications 6.1 Absolute Maximum Ratings Table 6-1. Absolute Maximum Ratings
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TGUI9680
TGUI9680.
TGUI9680
TGG21
0DG0433
tgui96
wram
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PDF
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NN5118160
Abstract: No abstract text available
Text: NN5116160A / NN5118160A series Fast Page Mode CMOS 1Mx 16bit Dynamic RAM NPN a< Preliminary Specification d e s c r ip t io n The NN5116160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga nized as 1,048,576 words by 16 bits. The NN5116160A/18160A series is fabricated with advanced CMOS
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NN5116160A
NN5118160A
16bit
NN5116160A/18160A
NN5116
60AXX
128ms
NN51181
NN5118160
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PDF
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Nippon capacitors
Abstract: No abstract text available
Text: MM1M0J32L/MM1M0J36L CMOS 1Mx 32bit / 36bit Fast Page Mode Memory Module DESCRIPTION The MM1M0J32L/J36L is a 32 Megabit Dynamic Random Access Memory Module organized as 1,048,576 x 32 x 36 bits in a 72 lead single inline module. The module contains eight 1M x 4bit Dynamic Random Access
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MM1M0J32L/MM1M0J36L
32bit
36bit
MM1M0J32L/J36L
MM1M0J13-
57REF
MM1M0J32UMM1M0J36L
x32blt/x36bit
CIQCI02D2
Nippon capacitors
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 0 4 3 6 1 1 Q L A IB M 0 4 1 8 1 1 Q L A Preliminary 32K X 36 & 64K X 18 SRAM Features • Common I/O • 32K x 36 or 64K x 18 Organizations • Asynchronous Output Enable and Power Down Inputs • 0.5 Micron CMOS Technology • Synchronous Pipeline Mode Of Operation with
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IBM043611QLA
IBM041811QLA
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PDF
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dq35j
Abstract: Nippon capacitors
Text: MM2M0J32L / MM2M0J36L CMOS 2M x 32bit / 36bit Fast Page Mode Memory Module DESCRIPTION The MM1M0J32L/J36L is a 64 Megabit Dynamic Random Access Memory Module organized as 2,097,152 x 32 x 36 bits in a 72 lead single inline module. The module contains sixteen 1M x 4bit Dynamic Random Access
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MM2M0J32L
MM2M0J36L
32bit
36bit
MM1M0J32L/J36L
MM2M0J32UMM2M0J36L
x32biVx36blt
dq35j
Nippon capacitors
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PDF
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Untitled
Abstract: No abstract text available
Text: NN511663 / NN511666series Fast Page Mode _ _w / CMOS 64Kx 16bit Dynamic RAM NPNAV DESCRIPTION The NN511663/1666 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511663/1666 series is fabricated with advanced CMOS technology and designed with innovative
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NN511663
NN511666series
16bit
NN511663/1666
NN511663/
NN511666aertes
NN511663XXI
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PDF
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Untitled
Abstract: No abstract text available
Text: = = = ¥ = = = r= 7 = IB M 0 4 3 6 1 1 R L A IB M 0 4 1 8 1 1 R L A Preliminary 32KX36&64KX18SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.5 Micron CMOS Technology • Synchronous Pipeline Mode Of Operation with Self-Timed Late Write • Single Differential PECL Clock compatible with
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OCR Scan
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32KX36
64KX18SRAM
IBM043611RLA
IBM041811RLA
03H9039
SA14-4658-02
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PDF
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Untitled
Abstract: No abstract text available
Text: NN51V16160A/ NN51V18160A series Fast Page Mode CMOS 1M x 16bit Dynamic RAM M x w D N /a x Preliminary Specification d e s c rip tio n The NN51V16160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga nized as 1,048,576 words by 16 bits. The NN51V16160A/18160A series is fabricated with advanced CMOS
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NN51V16160A/
NN51V18160A
16bit
NN51V16160A/18160A
128ms
NN51V18
60AXX
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 0 4 1 8 1 A R L A B IB M 0 4 3 6 1 A R L A B Prelim inary 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • Latched Outputs • 0.5 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Register-Latch Mode of Opera
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77H9963
0G042Ã
IBM04181ARLAB
IBM04361ARLAB
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PDF
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Untitled
Abstract: No abstract text available
Text: NN51V4260A series Fast Page Mode CMOS 256KX 16bit Dynamic RAM NPN a Preliminary Specification d e s c rip tio n The NN51V4260A series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN51V4260A series is fabricated with advanced CMOS technology and de
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NN51V4260A
256KX
16bit
NN51V4260AL
0Q0G57T
NNS1V4260A
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PDF
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Z8070
Abstract: No abstract text available
Text: r ^ PIN GRID ARRAY SOCKETS Standard, Long Solder Tail & Low Profile RRËGI-DIPi m _ -m Series 510, 511, 515 • Series 510, 511, & 515 PG A sockets are available in three solder tail lengths: standard, long and low profile. • C hoice o f three low force clips to
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ti771
0GD072
Z8070
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PDF
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Untitled
Abstract: No abstract text available
Text: NN5116165A/ NN5118165A series EDO Hyper Page Mode CMOS 1Mx 16bit Dynamic RAM NPN)a( Preliminary Specification d e s c rip tio n The NN5116165A/18165A series is a high performance CMOS Dynamic Random Access Memory orga nized as 1,048,576 words by 16 bits. The NN5116165A/18165A series is fabricated with advanced CMOS
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NN5116165A/
NN5118165A
16bit
NN5116165A/18165A
NN5116
65AXX
128ms
NN51181
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PDF
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CH9055A
Abstract: CH9055
Text: O CH9055 CHRONTEL PC Clock Generator Features • Generates up to 16 preset frequencies, 4 peripheral clocks, and buffers input reference frequency • Power down, slow down, stop clock, or output enable feature supporting “Green PC” applications • Smooth glitch-free frequency transitions
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CH9055
x86-based
AV9155
20-pin
CH9055
CH9055A
84MHz
16MHz
24MHz
CH9055A
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PDF
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Untitled
Abstract: No abstract text available
Text: NN51V18165B series EDO Hyper Page Mode _ _ _ _ CMOS 1M x 16bit Dynamic RAM NPNA' DESCRIPTION The NN51V18165B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18165B series is fabricated with advanced CMOS technology and designed with innovative
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NN51V18165B
16bit
NN51V18165BL
1005bSD
NN51V181
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PDF
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TUA4300P
Abstract: No abstract text available
Text: SIEMENS One-Chip Car Radio 1 Overview 1.1 Application TUA 4300P The TUA 4300P is a one-chip car radio system consist ing of AM/FM receiver, AM-up/down conversion, AGC amplifier/demodulator, FM-IF limiter amplifier/demodu lator and stereo decoder/noiseblanker.
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4300P
4300P
535b05
fi23SbDS
P-LCC-68-1
12x45Â
TUA4300P
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PDF
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Untitled
Abstract: No abstract text available
Text: NN51V18160B seriesFast Page Mode CMOS 1M x 16bit Dynam ic RAM NPN>a< DESCRIPTION The NN51V18160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18160B series is fabricated with advanced CMOS technology and designed with innovative
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OCR Scan
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NN51V18160B
16bit
NN51V18160BL
0QQ11CH
NN51V181
128ms
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PDF
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nn5117805
Abstract: No abstract text available
Text: NN5117805A series EDO Hyper Page Mode CMOS 2M x 8bit Dynamic RAM Bv w N Preliminary Specification d e s c rip tio n The NN5117805A series is a high performance CMOS Dynamic Random Access Memory organized as 2,097,152 words by 8 bits. The NN5117805A series is fabricated with advanced CMOS technology and de
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NN5117805A
NN5117805AL
NN5117805AX'
128ms
nn5117805
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PDF
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HN62428P
Abstract: No abstract text available
Text: H I TA C H I / L O G I C / A R R A Y S / M E 11 SIE » • M M T b SO B D01 7 73 ñ IBS HN62428 Series- Preliminary - T - H 4 - IS M S ’ 8M 512K x 16-bit and (1M x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62428 Series is an 8-Megabit CMOS Mask
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HN62428
16-bit)
16-bit
42-pin
44-lead
HN62428)
HN62428P
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PDF
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NN514256
Abstract: P26SJ-2A6 NNS14256 256Kx4bit
Text: NN514256 series Fast Page Mode CMOS 256K x 4bit Dynamic RAM DESCRIPTION The NN514256 series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 4 bits. The NN514256 series is fabricated with advanced CMOS technology and designed
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OCR Scan
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NN514256
256Kx
NN5142S6
D00D2T0
NN514256XX
P26SJ-2A6
NNS14256
256Kx4bit
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PDF
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Untitled
Abstract: No abstract text available
Text: P 7 M-Cfbol 7/92 ^ O D U E H R 1 / \ ß~7V-/3-5l 2225-K Martin Avenue, Santa Clara, CA 95050 FAX C O M P O N E N T S r i . f X J ù~ì^U ' 0-s 408 492-1400 (408)492-1500 10 to 1200 MHz jo -8 Cascadable Amplifier AC1264 (Typical Values) High Gain .
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2225-K
AC1264
TGGfl334
GDD0110
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PDF
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NN511662
Abstract: No abstract text available
Text: NN511662 series EDO Hyper Page Mode CMOS 64Kx 16bit Dynamic RAM NPN/A> DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech
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NN511662
16bit
NN511662L
G0Q153Ö
NNS11662
NN511662XX
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PDF
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PTN hn624017
Abstract: DP-42 HN624017F-17 HN624017FB-17 HN624017FP-17 HN624017P-17 HN624017TFP-17 Hitachi Scans-001 C1138
Text: HN624017 Series Preliminary 16M 1M X 16-bit and (2M x 8-bit) M ask ROM • DESCRIPTION The Hitachi HN624017 is a 16-Megabit CMOS Mask Programmable Read Only Memory organized as 1,048,576 x 16-bit and 2,097,152 x 8-bit. The low power consumption of this device makes it ideal for
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HN624017
16-bit)
16-Megabit
16-bit
42-pin
and44-lead
44-lead
PTN hn624017
DP-42
HN624017F-17
HN624017FB-17
HN624017FP-17
HN624017P-17
HN624017TFP-17
Hitachi Scans-001
C1138
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PDF
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