Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T680K Features Item Summary 68 H(±10%), 200mA, 190mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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Original
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BRC2016T680K
200mA,
190mA,
2000pcs
200mA
190mA
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PDF
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K0032
Abstract: Y255 QN22
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 001772A flflö ■ S M û K KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)
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OCR Scan
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KM741006J
01772A
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
TTbm45
K0032
Y255
QN22
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2016T680K Features Item Summary 68 H(±10%), 200mA, 190mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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Original
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BRC2016T680K
200mA,
190mA,
2000pcs
200mA
190mA
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PDF
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syncronous
Abstract: KM741006J-10 256kx4 256Kx4 SRAM
Text: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5% Power Supply
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OCR Scan
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KM741006J
256Kx4
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
syncronous
KM741006J-10
256Kx4 SRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Information KM74B4006 1M x 4 Syncronous SRAM 1,048,576 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Cycle Time : 10, 12, 15ns Max. • Low Power Dissipation KM74B4006-10 : 190mA (Max.) KM74B4006-12 : 185mA (Max.)
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OCR Scan
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KM74B4006
KM74B4006-10
190mA
KM74B4006-12
185mA
KM74B4006-15
180mA
400mil
A0-A19
71tm42
|
PDF
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radioactivity detector
Abstract: matrix led driver rohm 574
Text: 1/4 ● Structure ● Product Silicon Monolithic Integrated Circuit 7 x 7 Matrix LED DRIVER for Mobile Phone ● Type ● Figure BH6948GU 1. 2. 3. 4. 5. 6. Highly effective Charge Pump circuit that can be switched 1 time, 1.5 times, and 2 times pressure automatically. 190mA / MAX
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Original
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BH6948GU
190mA
31mA/ch,
62pin
R0039A
radioactivity detector
matrix led driver
rohm 574
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PDF
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Untitled
Abstract: No abstract text available
Text: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast C y c le Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.)
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OCR Scan
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KM741006J
256Kx4
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
KM741006J
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E ]> • 7 T b 4 m 2 GG177EÔ ÔÛÛ KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)
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OCR Scan
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GG177EÃ
KM741006J
KM741006J-10:
190mA
KM741006J-12:
180mA
KM741006J-15:
150mA
400mil
KM741006J
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PDF
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Untitled
Abstract: No abstract text available
Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total
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Original
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LX5506
64QAM,
54Mbps)
18dBm
190mA
24dBm
LX5506
16-pin
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PDF
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PVT312LS-T
Abstract: PVT312 PVT312L PVT312LS PVT312S PVT312S-T
Text: Data Sheet No. PD 10038D Series PVT312 Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open, 0-250V, 190mA AC/DC General Description The PVT312 Photovoltaic Relay is a single-pole, normally open solid-state relay that can replace
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Original
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10038D
PVT312
190mA
PVT312
PVT312L
PVT312LS-T
PVT312LS
PVT312S
PVT312S-T
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PDF
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Untitled
Abstract: No abstract text available
Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total
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Original
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LX5506
64QAM,
54Mbps)
18dBm
190mA
24dBm
LX5506
16-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application Wire-wound Chip Inductors for Industrial / Automotive Comfort and Safety Applications (CB series) CB2012T100KV Features Item Summary 10 H(±10%), 190mA, 440mA, 0805 Lifecycle Stage Mass Production AEC-Q200 qualified
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Original
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CB2012T100KV
190mA,
440mA,
AEC-Q200
3000pcs
52MHz
190mA
440mA
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T100K Features Item Summary 10 H(±10%), 190mA, 440mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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Original
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CB2012T100K
190mA,
440mA,
3000pcs
52MHz
190mA
440mA
32MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB2012T4R7M Features Item Summary 4.7 H(±20%), 190mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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Original
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LB2012T4R7M
190mA,
3000pcs
96MHz
190mA
45MHz
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PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total DC current. At higher supply voltage
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Original
|
LX5506
64QAM,
54Mbps)
18dBm
190mA
24dBm
LX5506
16-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T470K Features Item Summary 47 H(±10%), 90mA, 190mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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Original
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CB2012T470K
190mA,
3000pcs
52MHz
190mA
11MHz
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PDF
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LX5506LQ-TR
Abstract: LX5506 LX5506LQ
Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total
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Original
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LX5506
64QAM,
54Mbps)
18dBm
190mA
24dBm
LX5506
16-pin
LX5506LQ-TR
LX5506LQ
|
PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2012T220K Features Item Summary 22 H(±10%), 170mA, 190mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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Original
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CBC2012T220K
170mA,
190mA,
3000pcs
52MHz
170mA
190mA
16MHz
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PDF
|
Untitled
Abstract: No abstract text available
Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total
|
Original
|
LX5506
18dBm
64QAM/
54Mbps
26dBm
25GHz
100mA
85GHz
190mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LX5506 TM InGaP HBT 4.5 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For OFDM operation 64QAM, 54Mbps , the PA provides +18dBm linear output power with a very low EVM (Error-Vector Magnitude) of 3%, and consumes about 190mA total
|
Original
|
LX5506
18dBm
64QAM/
54Mbps
26dBm
25GHz
100mA
85GHz
190mA
|
PDF
|
BD1603
Abstract: No abstract text available
Text: Datasheet 1-Channel 190mA Charge Pump White LED Driver with 1-wire Serial Interface BD1603NUV ●General Description The high-power large current output type LED driver is a white LED driver best suited for applications that require the large current. It is equipped with output voltage and
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Original
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190mA
BD1603NUV
BD1603
|
PDF
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PVT312L
Abstract: ic 7380 PVT312 PVT312LS PVT312LS-T PVT312S PVT312S-T
Text: Data Sheet No. PD 10038C Series PVT312 Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open, 0-250V, 190mA AC/DC General Description PVT312L Features The PVT312 Photovoltaic Relay is a single-pole, normally open solid-state relay that can replace
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Original
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10038C
PVT312
190mA
PVT312L
PVT312
5M-1982
ic 7380
PVT312LS
PVT312LS-T
PVT312S
PVT312S-T
|
PDF
|
BRC2518T101K
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2518T101K Features Item Summary 100 H(±10%), 300mA, 190mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
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Original
|
BRC2518T101K
300mA,
190mA,
2000pcs
300mA
190mA
BRC2518T101K
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FÉE 8 4 1593 PRELIMINARY KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Cycle Time: 12,5ns Max. • Low Power Dissipation (mln. Cycle, 100% Duty) KM741006J-12: 190mA • Single 5V ± 5% Power Supply
|
OCR Scan
|
KM741006J
KM741006J-12:
190mA
741006J
|
PDF
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