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    1961 30 TRANSISTOR Search Results

    1961 30 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1961 30 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency P–1dB . Full gold metallization ensures excellent device lifetime


    Original     		PDF PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10

    TSSOP10

    Abstract: tSSOP10 Package
    Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency P–1dB .


    Original     		PDF PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10 TSSOP10 tSSOP10 Package

    FP11G

    Abstract: FP1189-G
    Text: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET


    Original     		PDF FP1189 OT-89 FP1189 FP11G FP1189-G

    FP1189

    Abstract: 8893 application diagram
    Text: FP1189 ½ - Watt HFET Product Information Product Features • • • • • • • • Product Description 50 – 4000 MHz ISO & EPC compliant +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401 8893 application diagram

    RFID ID-20

    Abstract: 113 marking code transistor ROHM HFET sot-89 MARKING CODE ab FP1189-PCB2140S FP1189-PCB900S JESD22-A114 FP1189 FP1189-PCB1900S 25c021
    Text: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm


    Original     		PDF FP1189 FP1189 OT-89 1-800-WJ1-4401 RFID ID-20 113 marking code transistor ROHM HFET sot-89 MARKING CODE ab FP1189-PCB2140S FP1189-PCB900S JESD22-A114 FP1189-PCB1900S 25c021

    RFID ID-20

    Abstract: marking c7 sot-89 113 marking code transistor ROHM FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S JESD22-A114 30ACPR ohm resistor 1 W 100 ROhm
    Text: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm


    Original     		PDF FP1189 FP1189 OT-89 1-800-WJ1-4401 RFID ID-20 marking c7 sot-89 113 marking code transistor ROHM FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S JESD22-A114 30ACPR ohm resistor 1 W 100 ROhm

    XD010-24S-D2F

    Abstract: No abstract text available
    Text: Preliminary Product Description The XD010-24S-D2F 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s latest, high performance LDMOS process. This unit operates from a single voltage and has internal temperature compensation of the bias voltage to ensure consistant


    Original     		PDF XD010-24S-D2F XD010-24S-D2F 30mils EDS-102932

    FP1189-G

    Abstract: FP11G FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S marking c7 sot-89
    Text: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401 FP1189-G FP11G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S marking c7 sot-89

    FP11G

    Abstract: TRANSISTOR BC 158 pnp WJ transistor bc 206 transistor bc 3843
    Text: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401 FP11G TRANSISTOR BC 158 pnp WJ transistor bc 206 transistor bc 3843

    MARKING S0 sot89

    Abstract: bc 3843 sot-89 marking dn
    Text: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401 MARKING S0 sot89 bc 3843 sot-89 marking dn

    FP11G

    Abstract: 113 marking code transistor ROHM FP1189 FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S
    Text: FP1189 ½ - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain


    Original     		PDF FP1189 FP1189 OT-89 WJ1-4401 FP11G 113 marking code transistor ROHM FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S

    Untitled

    Abstract: No abstract text available
    Text: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401

    FP11G

    Abstract: fp1189-g rfid reader id-20 FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S TRANSISTOR BC 206 PNP
    Text: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET


    Original     		PDF FP1189 FP1189 OT-89 1-800-WJ1-4401 FP11G fp1189-g rfid reader id-20 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S TRANSISTOR BC 206 PNP

    transistor kc 2026

    Abstract: 2N665 kc 2026 MIL-T-195 Germanium itt
    Text: MIL-S-19500/58D 28 February 1966 SUPERSEDING iUTT._rr_i a e;fin /K a n 1V A 1 U ~x “ *i/u W \Jf UUV/ 30 January 1961 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TVDT? OMflfiR 1 1 X U CI11UUU This specification is m andatory for use by all D epart­


    OCR Scan     		PDF MIL-S-19500/58D MIL-T-195 00/58C 2N665 MIL-S-19500, MIL-S-19500/58D MIL-S-19500 transistor kc 2026 2N665 kc 2026 Germanium itt

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 QQE5T70 TET H A P X N AMER PHILIPS/DISCRETE PXT2907/A b?E D SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A.


    OCR Scan     		PDF bbS3T31 QQE5T70 PXT2907/A PXT2222/A. PXT2907 PXT2907A

    transistor P2F

    Abstract: MARKING P2F P2B MARKING CODE MARKING H3B p2F 45 IEC134 PXT2907 PXT2907A 1961 30 TRANSISTOR ON MARKING P2F
    Text: 711005b □ f l 2 fl • P H I N PXT2907/A SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A. QUICK REFERENCE DA TA


    OCR Scan     		PDF 711005b PXT2907/A PXT2222/A. PXT2907 PXT2907A transistor P2F MARKING P2F P2B MARKING CODE MARKING H3B p2F 45 IEC134 PXT2907 PXT2907A 1961 30 TRANSISTOR ON MARKING P2F

    transistor ALG 20

    Abstract: No abstract text available
    Text: 711002b A2fl •PHIN PXT2907/A SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A. QUICK REFERENCE D A TA PXT2907


    OCR Scan     		PDF 711002b PXT2907/A PXT2222/A. PXT2907 PXT2907A transistor ALG 20

    Transistor D 799

    Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR
    Text: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G | MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.


    OCR Scan     		PDF BD795 BD797 BD799 BD801 BD797 B0801 BD796 BD801 Transistor D 799 transistor BD 522 transistor motorola 114-8 TRANSISTOR bd 147 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR

    8D241

    Abstract: No abstract text available
    Text: BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS C opyrights 1997, j*9wer Limited, UK • 40 W at 25°C Caae Temperatura • 3 A Continuous Collector Current • 5 A Peak Collector Currant • Customer-SpecHied Selections Available SEPTEMBER 1961 - REVISED MARCH 1997


    OCR Scan     		PDF BD241D, BD241E, BD241F O-220 BD241D BD241E 8D241

    SP571

    Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
    Text: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field


    OCR Scan     		PDF SGSP47 /P472¿ SGSP571/F572| SP472 SP572 OT-93 SP471 SP571 T471/P472 SGSP57I/P572 diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472

    2N512

    Abstract: Texas Germanium 2N512B 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power
    Text: TYPES 2N512, 2N512A, AND 2N512B P-N-P ALLOY-JUNCTION GERMANIUM HIGH-POWER TRANSISTORS T Y P E S 2N 512, 2 N 512A , and 2 N 5 1 2 B B U L L E T IN NO. DL-S 611472, MARCH 4 0 , 60, or 80 VOLTS 15-Amp Collector Current 150-Watt Dissipation LOW lco LOW VK LOW THERMAL RESISTANCE


    OCR Scan     		PDF 2N512, 2N512A, 2N512B 15-Amp 150-Watt 7S222 2N512 Texas Germanium 5 amp germanium pnp Germanium Amplifier Germanium Transistor GERMANIUM PNP LOW POWER TRANSISTORS 2N512A Germanium power

    transistor P2F

    Abstract: 1961 30 TRANSISTOR p2F 45 PXT2907 PXT2907A P2B MARKING CODE PXT2222
    Text: • bb53^31 0GES‘ì7D TET H A P X N AHER PHILIPS/DISCRETE PXT2907/A b?E D SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar e p ita xia l tran sisto r, housed in a SO T89 envelope. I t is intended fo r sw itching and linear applications. T he com p le m e n tary ty p e is P X T 2 2 2 2 /A .


    OCR Scan     		PDF 2517D PXT2907/A PXT2222/A. PXT2907 PXT2907A transistor P2F 1961 30 TRANSISTOR p2F 45 PXT2907 PXT2907A P2B MARKING CODE PXT2222

    2N1132

    Abstract: 2N1131
    Text: TYPES 2N1131, 2N1132 P-N-P SILICON TRANSISTORS B U L L E T IN NO. D L-S 731775, J U N E 1961- R E V IS E D M A R C H 1973 GENERAL PURPOSE MEDIUM-POWER TRANSISTORS • 2 Watts at 2S°C Case Temperature • Complements to 2N696 and 2N697 • 10-ohm Saturation Resistance max


    OCR Scan     		PDF 2N1131, 2N1132 2N696 2N697 10-ohm 2N1131

    B1329

    Abstract: transistor B1010 transistor a935 transistor b1329 transistor b1330 A1482 a935 a935 transistor transistor b1332 transistor a934
    Text: Transistors TO -92L • TO -92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L T0-92LS Pc W (Ta=25°C )


    OCR Scan     		PDF -92LS O-92L O-92LS O-92L. T0-92L T0-92LS A1902 B1595 B1596 2SC4722 B1329 transistor B1010 transistor a935 transistor b1329 transistor b1330 A1482 a935 a935 transistor transistor b1332 transistor a934