19N60C5 Search Results

19N60C5 Price and Stock

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IXYS Corporation IXKC19N60C5 MOSFET N-CH 600V 19A ISOPLUS220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXKC19N60C5	Tube			50	1 - 10 - 100 $4.126 1000 $4.126 10000 $4.126	Buy Now
TME	IXKC19N60C5				1	1 $4.96 10 $3.55 100 $3.55 1000 $3.55 10000 $3.55	Get Quote
New Advantage Corporation	IXKC19N60C5		408		1	1 - 10 - 100 $13 1000 $12.14 10000 $12.14	Buy Now
IXYS Integrated Circuits Division IXKC19N60C5 MOSFET DIS.19A 600V N-CH ISOPLUS220 COOLMOS THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXKC19N60C5		508			1 $10.00582 10 $10.00582 100 $9.0962 1000 $9.0962 10000 $9.0962	Buy Now

19N60C5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	19N60C5 ISOPLUS220TM E72873	PDF
19n60 Abstract: No abstract text available Text: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	19N60C5 ISOPLUS220TM E72873 20090209b 19n60	PDF
19n60 Abstract: No abstract text available Text: IXKC 19N60C5 Advanced Technical Information ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	19N60C5 ISOPLUS220TM E72873 19n60	PDF
19n60 Abstract: No abstract text available Text: IXKC 19N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 19 A VDSS = 600 V RDS on max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	19N60C5 ISOPLUS220TM E72873 19n60	PDF
19n60 Abstract: No abstract text available Text: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	19N60C5 ISOPLUS220TM E72873 20090209b 19n60	PDF
19n60 Abstract: 19n60c5 E72873 Text: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	19N60C5 ISOPLUS220TM E72873 20080523a 19n60 19n60c5 E72873	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF