MIC24D10-0101
Abstract: No abstract text available
Text: more than you expect Integrated 2x6 10/100 Base–T RJ45 LANDatacom Electrical Characteristics Inductance 350uH Min. Dielectic Rating 1500VAC Turns Ratio 1CT:1CT Insertion Loss -1.0dB typ. -20dB min. -16dB min. Return Loss -12dB min. -12dB min. Cross Talk -30dB min.
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350uH
1500VAC
-20dB
-16dB
-12dB
-30dB
100kHz,
MIC24D10-0101
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manual temperature controller CHB 702
Abstract: MC9S12XF asea MBT 160 S12XF256 NVP 1204 1M64J S12XF384 transistor f a614 729 PIN CONFIGURATION 2M64J Logic Cross-Reference
Text: MC9S12XF512 Reference Manual Covers MC9S12XF512 MC9S12XF384 MC9S12XF256 MC9S12XF128 S12X Microcontrollers MC9S12XF512V1RM Rev.1.17 02-October-2008 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most
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MC9S12XF512
MC9S12XF384
MC9S12XF256
MC9S12XF128
MC9S12XF512V1RM
02-October-2008
manual temperature controller CHB 702
MC9S12XF
asea MBT 160
S12XF256
NVP 1204
1M64J
S12XF384
transistor f a614 729 PIN CONFIGURATION
2M64J
Logic Cross-Reference
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C 5478
Abstract: AN609 SUP40N25-60
Text: SUP40N25-60_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUP40N25-60
AN609
19-Dec-07
C 5478
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mosfet 4414
Abstract: Si8451DB AN609
Text: Si8451DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si8451DB
AN609
19-Dec-07
mosfet 4414
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AN609
Abstract: No abstract text available
Text: Si1405BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1405BDH
AN609
19-Dec-07
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31117
Abstract: AN609 M/LM 31117
Text: SiB414DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SiB414DK
AN609
19-Dec-07
31117
M/LM 31117
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AN609
Abstract: SUP45N03-13L
Text: SUP45N03-13L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUP45N03-13L
AN609
19-Dec-07
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4614 mosfet
Abstract: 60241 C diode 1334 MOSFET 4614 AN609 Si8417DB 18243 68338
Text: Si8417DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si8417DB
AN609
19-Dec-07
4614 mosfet
60241 C
diode 1334
MOSFET 4614
18243
68338
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SUM110P06-08L
Abstract: 7106 transistor m 9587 AN609
Text: SUM110P06-08L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUM110P06-08L
AN609
19-Dec-07
7106
transistor m 9587
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AN609
Abstract: Si4840BDY
Text: Si4840BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4840BDY
AN609
19-Dec-07
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6948
Abstract: AN609 SUP28N15-52
Text: SUP28N15-52_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUP28N15-52
AN609
19-Dec-07
6948
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27332
Abstract: AN609 SUP60N10-16L
Text: SUP60N10-16L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUP60N10-16L
AN609
19-Dec-07
27332
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7922 diode
Abstract: AN609
Text: Si4648DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4648DY
AN609
19-Dec-07
7922 diode
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Untitled
Abstract: No abstract text available
Text: PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 4267 MHz 4442 MHz Tuning Voltage: 0.1 16 VDC Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm Supply Current: 30 40 mA Harmonic Suppression 2nd Harmonic : -20 -10
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10kHz
100kHz
CVCO55XX
CVCO55CC-4267-4442
19-Dec-07
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Untitled
Abstract: No abstract text available
Text: more than you expect Integrated 2x4 10/100 Base–T RJ45 LANDatacom Electrical Characteristics Inductance 350uH Min. Dielectic Rating 1500VAC Turns Ratio 1CT:1CT Insertion Loss -1.0dB typ. -20dB typ. -16dB typ. Return Loss -14dB typ. -12dB typ. Cross Talk -30dB typ.
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350uH
1500VAC
-20dB
-16dB
-14dB
-12dB
-30dB
100kHz,
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PTCSGM3
Abstract: No abstract text available
Text: 2381 671 912./PTCSG.T.BE Vishay BCcomponents PTC Thermistors, For Temperature Protection FEATURES • • • • • • • • • QUICK REFERENCE DATA PARAMETER Well-defined protection temperature levels Fast reaction time < 30 s in still air Accurate resistance for ease of circuit design
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2002/95/EC
2002/96/EC
08-Apr-05
PTCSGM3
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Vishay 2222 045
Abstract: MAL214036221E3 MAL21
Text: 140 RTM Vishay BCcomponents Aluminum Capacitors Radial, High Temperature Miniature FEATURES • Polarized aluminum non-solid electrolyte electrolytic capacitors, RoHS • Radial leads, cylindrical aluminum case with COMPLIANT pressure relief, insulated with a blue sleeve
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18-Jul-08
Vishay 2222 045
MAL214036221E3
MAL21
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Si1067
Abstract: AN609 Si1067X
Text: Si1067X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1067X
AN609
19-Dec-07
Si1067
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68307
Abstract: AN609 Si1065X
Text: Si1065X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1065X
AN609
19-Dec-07
68307
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AN609
Abstract: No abstract text available
Text: Si1905BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si1905BDH
AN609
19-Dec-07
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AN609
Abstract: 25803 12679
Text: Si7166DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7166DP
AN609
19-Dec-07
25803
12679
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7336
Abstract: AN609 SUU50N03-09P 68326
Text: SUU50N03-09P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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SUU50N03-09P
AN609
19-Dec-07
7336
68326
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 19 CSC" RELEASED FOR PU BLIC A TIO N PT3T REVISIONS SEJE J B Y AMP INCORPORATED.ALL R IG H TS RESERVED . DESCRIPTION LTR ECR-07-030667 R E V I S ED 0 .5 DUN 1 Ì T 19DEC07 APVO J.S S.M D & ~7* X? 'V h ; 1 >J — - r » »
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ECR-07-030667
19DEC07
17Q708
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. k// COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. REVISIONS DIST HM 00 P LTR DESCRIPTION DWN APVD J OBS 5 - , REV ECO—07—025549 19DEC07 LH SA K REVISED PER E C O -0 8 -0 3 1 715
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19DEC07
12MAY09
31MAR2000
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