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    1N4531 Search Results

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    1N4531 Price and Stock

    Nexperia 1N4531,133

    DIODE GEN PURP 75V 200MA DO34
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    DigiKey 1N4531,133 Cut Tape 61,133 1
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    Microchip Technology Inc 1N4531

    DIODE GEN PURP 75V 125MA DO34
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    Microchip Technology Inc 1N4531UR

    DIODE GEN PURP 75V 125MA DO213AA
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    Nexperia 1N4531,143

    DIODE GEN PURP 75V 200MA DO34
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    DigiKey 1N4531,143 Ammo Pack 5,000
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    Avnet Silica 1N4531,143 8 Weeks 5,000
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    EBV Elektronik 1N4531,143 8 Weeks 5,000
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    VPT Components JANTXV1N4531

    Diode Switching 100V 0.2A 2-Pin DO-34 - Bulk (Alt: JANTXV1N4531)
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    1N4531 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N4531 EIC Semiconductor High Speed Switching Diodes Original PDF
    1N4531 Microsemi Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY Original PDF
    1N4531 NXP Semiconductors 1N4531 - High-speed diodes - Cd max.: 4 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 25@VR=20V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=10mA mV; VR max: 75 V Original PDF
    1N4531 Philips Semiconductors High-Speed Diode Original PDF
    1N4531 Philips Semiconductors High-speed diodes Original PDF
    1N4531 Philips Semiconductors High Speed Silicon Diodes Original PDF
    1N4531 ROHM DIODE SWITCHING DIODE 100V 0.15A 2GSD Original PDF
    1N4531 ROHM COMPUTER DIODE Switching Original PDF
    1N4531 APD Semiconductor Planar Diodes Scan PDF
    1N4531 APD Semiconductor Planar Diodes, DO-35 Case Scan PDF
    1N4531 BKC International 100 V, 500 mW general purpose diode Scan PDF
    1N4531 Continental Device India DO-35 Switching Diodes (500mW) Scan PDF
    1N4531 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    1N4531 General Diode Silicon Diode Selection Guide Scan PDF
    1N4531 General Electric Semiconductor Data Handbook 1977 Scan PDF
    1N4531 General Electric Semiconductor Data Book 1971 Scan PDF
    1N4531 Microsemi COMPUTER DIODE Switching Scan PDF
    1N4531 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N4531 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N4531 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    1N4531 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4532

    Abstract: 1N4531
    Text: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings Ta = 25oC Continuous Reverse Voltage Repetitive Peak Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Symbol Value Unit VR 75 V VRRM 75


    Original
    PDF 1N4531, 1N4532 150oC 100mA, tr30ns 1N4532 1N4531

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diode Series 1N4531 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings @ 25°C Operating & Storage Temperature: -65°C to +175°C


    Original
    PDF 1N4531 MIL-PRF-19500/116 200mA,

    Untitled

    Abstract: No abstract text available
    Text: Silicon Zener Diode Series 1N4531 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings @ 25°C Operating Temperature: -65°C to +175°C Storage Temperature:


    Original
    PDF 1N4531 MIL-PRF-19500/116 500mW 125mA,

    Untitled

    Abstract: No abstract text available
    Text: Silicon Zener Diode Series 1N4531UR Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings @ 25°C Operating Temperature: -65°C to +175°C Storage Temperature:


    Original
    PDF 1N4531UR MIL-PRF-19500/116 500mW 125mA,

    C 704 diode

    Abstract: 1N4531
    Text: Silicon Switching Diode Series 1N4531 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings @ 25°C Operating & Storage Temperature: -65°C to +175°C


    Original
    PDF 1N4531 MIL-PRF-19500/116 200mA, C 704 diode 1N4531

    MIL-PRF-19500/116

    Abstract: 1N4531UR DO-213AA
    Text: FEATURES 1N4531UR1N4531UR AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/116 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:


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    PDF 1N4531UR 1N4531UR 500mW 125mA, MILPRF-19500/116 DO-213AA MIL-PRF-19500/116

    BUK2114

    Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
    Text: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63


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    PDF 1N4148 1N4531 1N47xxA 1PS10SB62 1PS10SB63 1PS10SB82 1PS181 1PS184 1PS193 1PS226 BUK2114 BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52

    1N4148

    Abstract: 1N4150 1N4448 1N4531
    Text: 1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes Switching diode 1N4531 / 1N4148 / 1N4150 / 1N4448 ∗This product is available only outside of Japan. zExternal dimensions Units : mm zApplication High-speed switching 1N4531 CATHODE BAND (BLACK) Type No. zFeatures


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    PDF 1N4531 1N4148 1N4150 1N4448 1N4531 DO-34 1N4448

    in4531

    Abstract: 1N4532 IN453 1N4531 IN4532 DO-34
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes


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    PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 in4531 IN453 1N4531 IN4532 DO-34

    in4531

    Abstract: 1N4532 1N4531 IN4532
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass


    Original
    PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 MAM156 in4531 1N4531 IN4532

    1N4532

    Abstract: 1N4531
    Text: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM


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    PDF 1N4531, 1N4532 DO-34 1N4531 1N4532 1N4531

    1N4532

    Abstract: 1N4531
    Text: 1N4531 ~ 1N4532 HIGH SPEED SWITCHING DIODES DO - 34 Glass FEATURES : • High switching speed: max. 4 ns 1.00 25.4 min. 0.063 (1.6 )max. • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA.


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    PDF 1N4531 1N4532 DO-34 1N4532 1N4531

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product data sheet Supersedes data of April 1996 1996 Sep 03 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass


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    PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 MAM156

    1N4536

    Abstract: 1n4531
    Text: TYPES 1N4531 THRU 1N4534, 1N4536 SILICON SWITCHING DIODES B U L L E T I N N O . D L -S 7 3 9 7 7 4 , M A R C H 1 9 6 7 - R E V I S E D M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents 1N4531 . . . 1N4148 . . . 1N914


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    PDF 1N4531 1N4534, 1N4536 1N4531 1N4148 1N914 1N4533. 1N4152 1N3605 1N4532

    1N4447-A

    Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
    Text: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536


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    PDF 1N4446 500mW 1N4447 1N4447 1N4448 1N4448 1S801 1N4447-A 1N4532 1S953 1N4448-A is805 1N4449 1N4454

    1N4532

    Abstract: IN4532 S0068 1N4531 IN4531 IR 10D DIODE
    Text: Philips Semiconductors Product specification High-speed diodes 1N4531 ; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leadedglass SOD68 DO-34 package The 1N4531, 1 N4532 are high-speed switching diodesfabricated in planar technology, and encapsulated in hermetically sealed leaded glass


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    PDF 1N4531; 1N4532 DO-34) 1N4531 1N4532 IN4532 S0068 IN4531 IR 10D DIODE

    1N4532

    Abstract: 1N4531
    Text: • ^ 5 3 1 3 1 □Q2bci0b Til ■ APX N AMER PHILIPS/DISCRETE 1N4531 1N4532 blE T> HIGH-SPEED SILICON DIODES Diodes in the sub-m iniature DO -34 envelope intended fo r fast logic and general purpose applications. Because o f th e ir small size the diodes are especially suitable fo r m o u n tin g in m in ia tu re assemblies e.g.


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    PDF nNI4531 1N4532 DO-34 DO-34 OD-68) 1N4531 1N4532 1N4531

    9364

    Abstract: 175C 1N4531
    Text: B K C INTERNATIONAL 30E » • 117=^03 0G003Sb 2 ■ "T-Cfé-O0! BKC INTERNATIONAL ELECTRONICS, INC. LAWRENCE, MA. 01841 TEL. 681-0392 DATA SHEET for 1N4531 DO-34 MAXIMUM RATING: V( BR) Io SURGE Top Tstg PW 100V 200mA 1/120S .5A -65C TO +175C -65C TO 20ÖC


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    PDF 0G003Sb T-03-00) 1N4531 DO-34 200mA 1/120S 8004-9364SE. 9364 175C 1N4531

    1N4531

    Abstract: 1N4534 1N4536
    Text: 1N4531 1N4534 1N4532 1N4536 1N4533 Diode, switching, leaded Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND <¿0 4 » 0 1 Features -f • available in DO-34 package


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    PDF 1N4531 1N4534 1N4532 1N4536 1N4533 DO-34 1N4533

    d1n914

    Abstract: bb204b BAV10
    Text: 10 Small Signal Leaded Devices Switching Diodes D 1N914 1N914A 1N914B 1N916 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS 11 BAV10 BAV18 BAV19 BAV20 BAV21 Pkg Vr V «F (mA) VF DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35


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    PDF DO-35 d1n914 bb204b BAV10

    1N446-49

    Abstract: DIODE LN4148 1N4154 1N4531 1N4536 1N914 1N916
    Text: 1N4536 1N914, A, B 1N4154 1N916, A, B 1IM4148, 49 1l\l446-49 1N4531 AM BIEN T T E M P E R A T U R E - T &- D E G R E E S CEN TIG R A D E t/T Figure 9 Figure 10 ESTIMATION OF REVERSE RECOVERY TIME UNDER VARIOUS DRIVE CONDITIONS The reverse recovery tim e of a silicon signal


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    PDF 1N914, 1N4154 1N4536 1N916, 1N446-49 1IM4148, 1N4531 1N446-49 DIODE LN4148 1N4531 1N4536 1N914 1N916

    JANTX 1N4148-1

    Abstract: 1N4148 JTX 1N4148-1 JAN 1N4148-1 JANTX 1N4148 JAN 1N4148 JANTX LM 1n4148 1N4531
    Text: 1N914=JAN JANTX1N914 COMPUTER D ODE i f , ÎT 1N4148; JAN, JANTX, JAN TXV 1N4148 j a n , j a n t x , j a n t x v 1N4148-1 1N4531; JAN, JANTX, JAN TXV 1N4531 General Purpose Switching FEATURES DESCRIPTION • • • • • T h is serie s is very popular for general


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    PDF 1N4148; 1N4148 1N4148-1 1N4531; 1N4531 1N914= JANTX1N914 DO-34 DO-35 M1-CS40 JANTX 1N4148-1 1N4148 JTX 1N4148-1 JAN 1N4148-1 JANTX 1N4148 JAN 1N4148 JANTX LM 1n4148 1N4531

    PJ 949 diode

    Abstract: No abstract text available
    Text: bbSBiai ooeb'iob m N AMER PHILIPS/DISCRETE « apx bSE 1N4531 1N4532 D HIGH-SPEED SILICON DIODES Diodes in the sub-miniature DO-34 envelope intended fo r fast logic and general purpose applications. Because o f their small size the diodes are especially suitable fo r mounting in miniature assemblies e.g.


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    PDF 1N4531 1N4532 DO-34 PJ 949 diode

    DSAIH0002568

    Abstract: No abstract text available
    Text: B K C INTERNATIONAL 30E » • 117=^03 0G003Sb 2 ■ ~T-03-0°l BKC INTERNATIONAL ELECTRONICS, INC. LAWRENCE, MA. 01841 TEL. 681-0392 DATA SHEET for 1N4531 DO-34 MAXIMUM RATING: V( BR) Io SURGE Top Tstg PW 100V 200mA 1/120S .5A -65C TO +175C -65C TO 20ÖC


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    PDF 0G003Sb T-03-0 1N4531 DO-34) 200mA 1/120S DSAIH0002568