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1N831A Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
1N831A		MicroMetrics			Original	PDF
1N831A		Advanced Semiconductor	Silicon Point Contact Mixer Diodes		Scan	PDF
1N831A		Motorola	Motorola Semiconductor Datasheet Library		Scan	PDF
1N831A		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
1N831A		Unknown	Shortform Semicon, Diode, and SCR Datasheets		Short Form	PDF
1N831A		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
1N831AM		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

1N831A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1N831 Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes Text: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and	Original	1N831 1N831A 1N831B 1N831C 1N832 1N832A 1N832B 1N832C 1N831 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes	PDF
Untitled Abstract: No abstract text available Text: MIL-S-19$ÛO/35>2 EL AMENDMENT 1 10 September 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A Page 3 Paragraph h3«1 , T est co n d itio n s, change "P»5«0 raw” to read: "PO .i? ttw11 Custodian: Arrny-KT. Preparing a c t i v i t y :	OCR Scan	MIL-S-1950O/35 5961-A36U	PDF
JAN1N23WG Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A Text: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED	OCR Scan		PDF
1N23 diode Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local	OCR Scan		PDF
1N23 diode Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for	OCR Scan	1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan		PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor	PDF
MIS us army Abstract: ltsx 1N831A 1N831 Text: « « -T T n 1 A F * A A f n P C% / T ’ T \ I V l l l v - ö - I V ^ U U / ¿D Z ü iL . 25 MARCH 1966 MILITARY SPECIFICATION c rr iM r r n \ m T ì p t a dI I nJ - T rA \J 7Y il Vr ii U? i T l l L i V l ^ J L / U \ j 1 V O ^ T ìT A T ìT ? J L /X V J L /U j	OCR Scan	1N831A MIL-S-19500 MIS us army ltsx 1N831A 1N831	PDF
1N23C Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132 Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf\| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:	OCR Scan		PDF
1N21* Diode Detector Holder Abstract: MA492C 1N23C diode MA41513 1N493C 1N23G Silicon Point Contact Mixer Diodes 1n415g jan-1n21we 1N23C Text: Point Contact Mixer and Detector Diodes Features • PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT DETECTOR DIODES Description	OCR Scan		PDF
1N23C diode Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure	OCR Scan	DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR	PDF
1N23 diode Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure	OCR Scan		PDF