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    Toshiba America Electronic Components 1SS392,LF

    DIODE ARR SCHOTT 40V 100MA SC59
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    DigiKey 1SS392,LF Digi-Reel 2,893 1
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    1SS392,LF Cut Tape 2,893 1
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    1SS392,LF Reel 3,000
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    Mouser Electronics 1SS392,LF 7,687
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    Toshiba America Electronic Components 1SS392,LF(T

    Rectifier Diode Small Signal Schottky Si 45V 0.1A 3-Pin S-Mini T/R
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    Verical 1SS392,LF(T 3,000 312
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    Chip1Stop 1SS392,LF(T Cut Tape 3,000
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    1SS392,LF(T Cut Tape 1
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    Toshiba America Electronic Components 1SS392

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    Bristol Electronics 1SS392 6,000
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    Quest Components 1SS392 4,800
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    Others 1SS392

    AVAILABLE EU
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    ComSIT USA 1SS392 45,000
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    Toshiba America Electronic Components 1SS392LF(T

    Diode Small Signal Schottky 45V 0.1A 3-Pin SOT-346 (Alt: 1SS392,LF(T)
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    Avnet Asia 1SS392LF(T 24 Weeks 3,000
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    1SS392 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS392 Kexin Low Voltage High Speed Switching Original PDF
    1SS392 Toshiba shottky barrier diode Original PDF
    1SS392 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original PDF
    1SS392 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
    1SS392 Toshiba DIODE Scan PDF
    1SS392,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 40V SC59 Original PDF
    1SS392(TE85L,F) Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 100MA S-MINI Original PDF

    1SS392 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS392 SC-59 O-236MOD 100mA

    Untitled

    Abstract: No abstract text available
    Text: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS392 SC-59

    TO-236MOD

    Abstract: 1SS392 sc59
    Text: 1SS392 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS392 ○ 低電圧高速スイッチング用 単位: mm : SC–59 : VF 3 = 0.54V (標準) : IR = 5 A (最大) z 外形が小さい。 z 順方向電圧が低い。


    Original     		PDF 1SS392 236MOD 100mA TO-236MOD 1SS392 sc59

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS392 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF =0.54V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current :IR =5


    Original     		PDF 1SS392 OT-23

    1SS392

    Abstract: No abstract text available
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS392 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF =0.54V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF 1SS392 OT-23 1SS392

    marking code diode 04

    Abstract: Low Forward Voltage Diode marking code MS SOT Reverse voltage diode Schottky diode low voltage schottky marking code PD sot-23 marking code 1SS392
    Text: 1SS392 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZD" SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


    Original     		PDF 1SS392 OT-23 marking code diode 04 Low Forward Voltage Diode marking code MS SOT Reverse voltage diode Schottky diode low voltage schottky marking code PD sot-23 marking code 1SS392

    Untitled

    Abstract: No abstract text available
    Text: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS392 SC-59

    1SS392

    Abstract: No abstract text available
    Text: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS392 SC-59 1SS392

    1SS392

    Abstract: No abstract text available
    Text: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS392 SC-59 10mslled 1SS392

    1SS392

    Abstract: No abstract text available
    Text: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS392 SC-59 1SS392

    1SS392

    Abstract: No abstract text available
    Text: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS392 SC-59 1SS392

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor

    236m

    Abstract: No abstract text available
    Text: 1SS392 TO SHIBA TOSHIBA DIODE 1 SS392 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING + 0.5 2.5-0.3 • • • Low Forward Voltage Low Reverse Current Small Package VF 3 = 0.54V (TYP.) Ir = 5^A (MAX.) SC - 5 9 + 0.25


    OCR Scan     		PDF 1SS392 SS392 236m

    1SS392

    Abstract: No abstract text available
    Text: TOSHIBA 1SS392 TOSHIBA DIODE 1 SS392 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • • Low Forward Voltage Low Reverse Current Small Package VF 3 = 0.54V (TYP.) Ir = 5/¿A (MAX.) SC-5 9 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS392 SC-59 1SS392

    Untitled

    Abstract: No abstract text available
    Text: 1SS392 TO SHIBA TO SHIBA DIODE 1 SS392 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING + 0.5 2 . 5 - 0 .3 • • • Low Forward Voltage Low Reverse Current Small Package VF 3 = 0.54V (TYP.) Ir = 5^A (MAX.) SC - 5 9


    OCR Scan     		PDF 1SS392 SS392

    Untitled

    Abstract: No abstract text available
    Text: 1SS392 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING + 0.5 2.5-0.3 • • • 3 = 0.54V (TYP.) I r = 5//A (MAX.) SC-5 9 Low Forward Voltage Low Reverse Current Small Package + 0.25 1.5-0.15 VF


    OCR Scan     		PDF 1SS392