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    Toshiba America Electronic Components 1SS397TE85LF

    DIODE GEN PURP 400V 100MA SC70
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    DigiKey 1SS397TE85LF Reel 3,000
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    1SS397TE85LF Digi-Reel 1
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    1SS397TE85LF Cut Tape 1
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    Avnet Americas 1SS397TE85LF Reel 3,000
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    Mouser Electronics 1SS397TE85LF 7,840
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    Toshiba America Electronic Components 1SS397(TE85L,F)

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    Quest Components 1SS397(TE85L,F) 592
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    Chip One Stop 1SS397(TE85L,F) Cut Tape 2,880
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    1SS397 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS397 Toshiba Diode - Silicon Epitaxial Pin Type Original PDF
    1SS397 Toshiba DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    1SS397 Toshiba DIODE Scan PDF
    1SS397TE85LF Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SW 400V 100MA USM Original PDF

    1SS397 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1SS397

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0V typ. z High voltage : VR = 400V (min.) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance


    Original     		1SS397 SC-70 1SS397 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS397 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS VOLTAGE 420 Volts CURRENT 100mA SOT-323 Unit：inch mm • Surface mount package Ideally Suited for Automatic insertion 0.004(0.10)MIN. • Fast switching speed. 0.087(2.20) 0.070(1.80) • Electrically Identical to Standard JEDEC


    Original     		1SS397 100mA OT-323 2002/95/EC OT-323, MIL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		1SS397 SC-70 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0V typ. z High voltage : VR = 400V (min.) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance


    Original     		1SS397 SC-70 PDF

    1SS397

    Abstract: No abstract text available
    Text: 1SS397 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS397 ○ 高電圧スイッチング用 z z z z 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 : : : 単位: mm VF = 1.0V 標準


    Original     		1SS397 100mA 1SS397 PDF

    1SS397

    Abstract: No abstract text available
    Text: 1SS397 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS VOLTAGE 420 Volts CURRENT 100mA SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Surface mount package Ideally Suited for Automatic insertion .087(2.2) .078(2.0) .004(.10)MIN. • Fast switching speed.


    Original     		1SS397 100mA OT-323 2002/95/EC OT-323, MIL-STD-750, 1SS397 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS397 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS VOLTAGE 420 Volts CURRENT 100mA SOT-323 Unit：inch mm • Surface mount package Ideally Suited for Automatic insertion 0.004(0.10)MIN. • Fast switching speed. 0.087(2.20) 0.070(1.80) • Electrically Identical to Standard JEDEC


    Original     		1SS397 100mA OT-323 2002/95/EC IEC61249 OT-323, MIL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min.) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance


    Original     		1SS397 SC-70 100mA PDF

    1SS397

    Abstract: DASF004075 DASF00407
    Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min.) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance


    Original     		1SS397 SC-70 1SS397 DASF004075 DASF00407 PDF

    1SS397

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		1SS397 SC-70 1SS397 PDF

    1SS397

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0V typ. z High voltage : VR = 400V (min.) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance


    Original     		1SS397 SC-70 1SS397 PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


    Original     		SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B PDF

    HN4C06J

    Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
    Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2


    Original     		PDF

    XL SC-70

    Abstract: No abstract text available
    Text: 1SS397 TO SHIBA 1SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package :Vjr= 1.0V Typ. : V r = 400V (Min.)


    OCR Scan     		1SS397 SC-70 961001EAA2' XL SC-70 PDF

    XL SC-70

    Abstract: No abstract text available
    Text: TOSHIBA 1SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE 1SS39 7 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage U nit in mm 2.1 ± 0.1 : V f = 1.0V Typ. 1.25 + 0.1 : VR = 400V (Min.) Fast Reverse Recovery Time : ^ = 0.5^8 (Typ.)


    OCR Scan     		1SS397 1SS39 SC-70 961001EAA2' XL SC-70 PDF

    1SS397

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA 1 SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vjr = 1.0V Typ. VR —400V (Min.)


    OCR Scan     		1SS397 SC-70 300/u 961001EAA2' 1SS397 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA 1SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package :Vjr= 1.0V Typ. : V r = 400V (Min.)


    OCR Scan     		1SS397 SC-70 961001EAA2' PDF