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    1AM DIODE Search Results

    1AM DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1AM DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel


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    PDF LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape

    TRANSISTOR SMD MARKING CODE 1AM

    Abstract: smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-G NPN RoHS Device Features -Epitaxial planar die construction SOT-23 -As complementary type, the PNP 0.118(3.00) 0.110(2.80) transistor MMBT3904-G is recommended 3 0.055(1.40) 0.047(1.20) 1 2 0.006(0.15)


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    PDF MMBT3904-G OT-23 MMBT3904-G QW-BTR01 TRANSISTOR SMD MARKING CODE 1AM smd transistor 1AM smd 1AM SMD TRANSISTOR MARKING 1am 1am smd 1am smd transistor SMD MARKING CODE 1am SMD 1am Transistor marking code SS SOT23 transistor transistor 1am

    TRANSISTOR SMD MARKING CODE 1AM

    Abstract: smd transistor 1AM smd 1AM SMD MARKING CODE 1am MMBT3904-HF SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor
    Text: General Purpose Transistor SMD Diodes Specialist MMBT3904-HF NPN RoHS Device Features -Halogen Free -Epitaxial planar die construction SOT-23 0.118(3.00) 0.110(2.80) -As complementary type, the PNP 3 transistor MMBT3904-HF is recommended 0.055(1.40) 0.047(1.20)


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    PDF MMBT3904-HF OT-23 MMBT3904-HF QW-HTR02 TRANSISTOR SMD MARKING CODE 1AM smd transistor 1AM smd 1AM SMD MARKING CODE 1am SMD TRANSISTOR MARKING 1am 1am smd marking code SS SOT23 MARKING SMD PNP TRANSISTOR 1am 1am smd transistor

    Untitled

    Abstract: No abstract text available
    Text: DIODES INC PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: 6/24/02 6/24/02 Discrete Semiconductor DCS/PCN-1011 Alert Type: PCN #: Specification Change, Marking Change, Assembly Site & Test Site PCN #:2002-1011 TITLE Specification Change, Marking Change MMBT3904


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    PDF DCS/PCN-1011 MMBT3904 com/datasheets/ds30036 QP502-1 QP502-1

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


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    PDF SMB10 J-STD-020, AEC-Q101 DO-214AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SMBJ vishay

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


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    PDF SMB10 J-STD-020, AEC-Q101 DO-214AA 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SMBJ vishay

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


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    PDF SMB10 J-STD-020, DO-214AA 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


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    PDF SMB10 J-STD-020, AEC-Q101 DO-214AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    marking code 1bx

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


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    PDF SMB10 DO-214AA J-STD-020, 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. marking code 1bx

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


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    PDF SMB10 DO-214AA J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original
    PDF SMB10 J-STD-020, AEC-Q101 DO-214AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


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    PDF SMB10 DO-214AA J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    1am surface mount diode

    Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
    Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC


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    PDF O-226AA O-236AB OT-23) OT-223) MMBTA42LT1 MMBT5551LT1 BSP52T1 1am surface mount diode c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f

    270vdc

    Abstract: "thermal fuse" ry
    Text: MI-1AM M ilitary Input A tten u ator Modules Product Highlights The MI-IAM is an accessory product to Vicor’s Ml-Series of DC-DC converters that provides the EMI/RFI filtering and transient protection required in military applications. Designed for use


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    PDF 270Vdc MIL-STD-461 MIL-STD-810 MIL-STD-704A MIL-STD1275A MI-200 -4855-1A 125-C "thermal fuse" ry

    marking DIODE 2U 04

    Abstract: marking 2U diode marking 2U 20 diode marking 2U 40 diode d490 D491 marking 2U 28 diode 2u schottky Barrier Diodes WSD490 WSD491
    Text: W SD 490/W SD 491 Surface M o un t Schottkv B a rrie r Diode SCHOTTKV BARRIER R E C TIFIER S 1.0AM PERES 20-40VOLTS F eatu res: *L ow Turn-on Voltage *Fast S w itch in g *PN Ju n ction G uard Ring fo r T ransient and ESD P rotection M echanical D ata: *Case : SOT-346, M olded P lastic


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    PDF D490/WSD491 OT-346. MIL-STD-202 20-40VOLTS SC-59 SC-59 WSD490AVSD491 D490AVS marking DIODE 2U 04 marking 2U diode marking 2U 20 diode marking 2U 40 diode d490 D491 marking 2U 28 diode 2u schottky Barrier Diodes WSD490 WSD491

    Untitled

    Abstract: No abstract text available
    Text: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n n 3 F 11 m m m 'm m m mr v • ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. TT. *j H unit x 2 .i± a i 1.25±0.1 • Low Forw ard Voltage


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    PDF HN1D03FU

    Untitled

    Abstract: No abstract text available
    Text: DU C o n te n ts S e rie s Page Surface Mount Devices •s g g s a Thick Film Chip Resistors RC 2 h U v 7JU5F 7 yiftifLtff Trimmable Chip Resistors RC Tr 6 51 7 T'tSfiiT' 7 h *7 — ? Chip Resistor Networks RAC 8 Chip Trimmer Potentiometers * 7 8 £ 3 i7 >


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    PDF

    V06C HITACHI

    Abstract: DHM3K20 DHM3HC80 hitachi rectifier U05B DHM3G80 DFM1SA DHM3FG80 DAM3A HITACHI DFG2A hitachi V03C
    Text: Diodes Axial • it m. Lead Type v-vwmm* mm#*- m¿2&&r¿3>cy7 vyz^mm^ l«-?íf5o t t x - yy yya iFeatures ►Hitachi diodes are available for any kind of applications. The versatile lineup includes general use rectifier diodes, surge-absorbing devices, high-voltage


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    PDF AW01-06 AW01/AU01-07 V06C HITACHI DHM3K20 DHM3HC80 hitachi rectifier U05B DHM3G80 DFM1SA DHM3FG80 DAM3A HITACHI DFG2A hitachi V03C

    BT3904

    Abstract: 2N3903 MOTOROLA SOT-23 BT3904LT1
    Text: M A X IM U M RATINGS Rating Symbol Value Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 60 Vdc Emitter-Base Voltage v EBO 6.0 Vdc 'c 200 mAdc Symbol Max Unit Pd 225 mW 1.8 mW/°C r »j a 656 ° c /w pd 300 mW 2.4 m w rc r 0JA 417 ° c /w


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    PDF MMBT3904LT1* OT-23 O-236AB) BT3904LT1 BT3904 2N3903 MOTOROLA SOT-23 BT3904LT1

    Untitled

    Abstract: No abstract text available
    Text: SCRs ID200-ID203 ID300-ID301 1.6 Amp, Planar FEATU RES DESCRIPTION • • • • This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs designed for high-voltage, medium-current control applications. The Series is packaged in a TO-39 metal case with Microsemi's unique oxide passivated junctions to ensure


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    PDF ID200-ID203 ID300-ID301 ID201 ID200

    ba38 diode

    Abstract: rca tube OC 3 RADIOTRON ST-12 rca company Scans-0017340 if7g RCA tube
    Text: DUPLEX-DIODE PENTODE Coated 2 .0 0 .0 6 F i lament V o lta g e C u rre n t d -c v o lt s amp. D ir e c t I n t e r e le c t r o d e C a p a c ita n c e s - Pentode U n it : 0 .0 0 7 max. put G r id to P la t e w ith sh ie ld -can 4 p jjf Input 9 ¿ i/jf


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    PDF ST-12 92C-4888 92C-6I24 ba38 diode rca tube OC 3 RADIOTRON rca company Scans-0017340 if7g RCA tube

    Untitled

    Abstract: No abstract text available
    Text: l i 5E D POUEREX INC • 72^41,31 0DÜ3bhB 7 " F -â ? -ü mNEREX ED_ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Dual SCft, SCR/Diode Isolated Modules


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    PDF 1S697 BP107, Amperes/100-2000 ED430825

    CR02A

    Abstract: No abstract text available
    Text: POltiEREX INC H M B 1SE D R S • TSTMbSl QGG34T5 1 T Powerex, Inc., Hlllis Street, Yaungwood, Pennsylvania t5697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 CDL2_ 60 CDL7_ 60 Tentative SCR/Diode Light-Triggered


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    PDF QGG34T5 t5697 BP107 Amperes/100-1400 AX/10 MAX/10 CR02A

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP b3E D • 7 [n 7 G ? b D012D11 51T «TS A J a m ^ z l— - y S uita ble i Type No. °ackaqe RP • : MIX-OSC M o s t S uitable ,F Arr'° o "c o n v • • Detector Narrow tana stop&gr» • Local Buffer Voltage Range CV LA1130


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    PDF D012D11 LA1130 SIP-16 LA1135 LA1135M DIP-20S MFP-20 LA1136N LA1136NM DIP24S