transistor smd marking PE
Abstract: SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G
|
Original
|
BC846W
OT-323
BC847AW
BC846AW
BC847BW
BC846BW
BC847CW
BC847W
BC848W
transistor smd marking PE
SMD TRANSISTOR MARKING 1D
transistor smd marking PE 1b
|
PDF
|
smd TRANSISTOR 1D
Abstract: SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G
|
Original
|
BC846W
OT-323
BC847AW
BC846AW
BC847BW
BC846BW
BC847CW
BC847W
BC848W
smd TRANSISTOR 1D
SMD TRANSISTOR MARKING 1D
SMD TRANSISTOR MARKING 1F
smd transistor 1g
SMD TRANSISTOR MARKING 1B
transistor smd 1E
ts 4141 TRANSISTOR smd
1D smd transistor
TRANSISTOR smd 1D
smd transistor marking 1h
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC846 BC847 BC848 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose N–P–N transistors Marking BC846 = 1D BC846A = 1A BC846B = 1B BC847 = 1H
|
Original
|
OT-23
BC846
BC847
BC848
BC846
BC846A
BC846B
BC847A
BC847B
|
PDF
|
CMBT2907
Abstract: CMBT2907A
Text: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_
|
OCR Scan
|
CMBT2907
CMBT2907A
CMBT2907
500mA;
150mA;
CMBT2907A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N -P-N transistors Marking CMBT3903 = ÎY CMBT3904 = ÎA PA CKA G E O U TLIN E DETAILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 014 0.09 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.02 ^
|
OCR Scan
|
CMBT3903
CMBT3904
23833TM
|
PDF
|
FDG314P
Abstract: SC70-6
Text: =M l C O N D U C T O R PRELIMINARY tm FDG314P Digital FET, P-Channel General Description Features This P -C h an n el e nh ancem en t mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DM OS technology. This
|
OCR Scan
|
FDG314P
FDG314P
SC70-6
|
PDF
|
npn 1b
Abstract: CMBT3903 CMBT3904
Text: L CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N-P-N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 0.09 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter
|
OCR Scan
|
CMBT3903
CMBT3904
CMBT3903
CMBT3904
npn 1b
|
PDF
|
CMBT3906
Abstract: No abstract text available
Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor Marking CMBT3906 ; 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 2.00 1.80 0.60 0.40 ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
CMBT3906
CMBT3906
|
PDF
|
Untitled
Abstract: No abstract text available
Text: D1L CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N -P-N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.14 0.48 "531 ’S 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 0.70 0.50 1.4 1.2
|
OCR Scan
|
CMBT3903
CMBT3904
CMBT3903
R0-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DIL BSR20 BSR20A SILICON P-N -P HIGH-VOLTAGE TRANSISTORS P-N -P high-voltage small-signal transistors Marking BSR20 = T35 BSR20A = T36 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 038 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = CO LLECTOR
|
OCR Scan
|
BSR20
BSR20A
BSR20
250pA;
BSR20A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OIL CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F JS.O 2.8 0»14 0.48 038 3 Pin configuration 1 = BASE 2 * EMITTER 2.6 2.4 3 = COLLECTOR
|
OCR Scan
|
CMBT2907
CMBT2907A
CMBT2907
150mA;
|
PDF
|
MARKING J1A
Abstract: BSR20 BSR20A RB3 marking
Text: BSR20 BSR20A IL SILICON P -N -P HIGH-VOLTAGE TRANSISTORS P -N -P high-voltage small-signal transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BSR20 = T35 BSR20A = T36 3.0 2.8 0 .1 4 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
|
OCR Scan
|
BSR20
BSR20A
BSR20
MARKING J1A
BSR20A
RB3 marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4
|
OCR Scan
|
CMBT2907
CMBT2907A
150mA;
|
PDF
|
1B marking transistor
Abstract: st ld 33 FDD603AL transistor themal
Text: E M IC O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T his N-Channel logic level enhancem ent m ode power fie ld e ffe c t tra n s is to r is produced using F a irc h ild ’s proprietary, high cell density, DM OS technology. This
|
OCR Scan
|
FDD603AL
FDD603AL,
1B marking transistor
st ld 33
FDD603AL
transistor themal
|
PDF
|
|
|
PQC5001T
Abstract: PPC5001T FO-102
Text: T = - 3 3 - o ^ PPC5001T PQC5001T PHILIPS INTERNATIONAL 5bE ]> • 711002b 00Mb422 1SG IPHIN MICROWAVE POWER TRANSISTORS NPN silicon power transistor fo r use in a common-collector oscillator circuits in m ilita ry and professional applications. The transistors operate in CW conditions and are recommended fo r applications up to 5 GHz.
|
OCR Scan
|
PPC5001T
PQC5001T
711002b
00Mb422
PPC5001T
PQC5001T
T-33-05
711065b
FO-102
|
PDF
|
CMBT3903
Abstract: CMBT3904
Text: CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N -P -N transistors PACKAG E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m Marking CMBT3903 = ÎY CMBT3904 = ÎA _3.0 2.8 0.14 0.09 0.48 0.38 _L 0 .70 0.50 3 1.4 2.6 Pin configuration 1.2 2.4 1 = BASE 2 = EMITTER
|
OCR Scan
|
CMBT3903
CMBT3904
CMBT3903
CMBT3904
|
PDF
|
FDC633N marking convention
Abstract: No abstract text available
Text: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
|
Original
|
FDC633N
NF073
FDC633N marking convention
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IL BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin configuration 1 = BASE 2 » EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C
|
OCR Scan
|
BCW31
BCW32
BCW33
BCW31
BCW32
|
PDF
|
Diodes Marking K7
Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B
|
OCR Scan
|
OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
Diodes Marking K7
Diodes Marking K6
sot23 marking m8
transistors marking 1p
BSS69
marking 1p sot23
Marking b4 SOT23
MARKING l7
MARKING K4
marking H6 sot 23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCW69 BCW70 IL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW69 = Hl BCW70 = H2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.6 ^ 0.48 . 1 0.38 0.14 0.09 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.60 0.40
|
OCR Scan
|
BCW69
BCW70
|
PDF
|
314P
Abstract: No abstract text available
Text: S E M IC O N D U C TO R PRELIMINARY tm FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This
|
OCR Scan
|
FDG314P
SC70-6
314P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)
|
OCR Scan
|
BCW89
23fl33T4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCW89 CDU SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm O .H 0.70 0.50 "11.4 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.2 R0.1 ööö+T j f S »W-05 0.12 0.02 ABSOLUTE MAXIMUM RATINGS
|
OCR Scan
|
BCW89
200tiA;
|
PDF
|
1F SOT 23
Abstract: 1F SOT-23 1a SOT-23 LBC846ALT1G 2f sot-23 2b sot 23 LBC846 LBC847 LBC847ALT1G LBC850
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.
|
Original
|
LBC846ALT1G
LBC846
LBC847,
LBC850
LBC848,
LBC849
1F SOT 23
1F SOT-23
1a SOT-23
LBC846ALT1G
2f sot-23
2b sot 23
LBC846
LBC847
LBC847ALT1G
LBC850
|
PDF
|
