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    1C00001 Search Results

    1C00001 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    10106267-1C00001LF Amphenol Communications Solutions PwrBlade+®,Power Connectors, Vertical, Header, 1HP 1HP(OMIT) 12LP Visit Amphenol Communications Solutions
    10106266-1C00001LF Amphenol Communications Solutions PwrBlade+®,Power Connectors, Vertical, Header, 2HP 12LP Visit Amphenol Communications Solutions
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    1C00001 Price and Stock

    Renesas Electronics Corporation RTK0ES1001C00001BJ

    RENESAS SOLUTION STARTER KIT FOR
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    DigiKey RTK0ES1001C00001BJ Box 43 1
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    Avnet Americas RTK0ES1001C00001BJ Box 5 4 Weeks 1
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    Mouser Electronics RTK0ES1001C00001BJ 6
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    Newark RTK0ES1001C00001BJ Bulk 14 1
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    Avnet Silica RTK0ES1001C00001BJ 5 6 Weeks 1
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    Chip1Stop RTK0ES1001C00001BJ Bulk 4
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    New Advantage Corporation RTK0ES1001C00001BJ 6 1
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    Diodes Incorporated NX51C00001

    Clock SAW Oscillator SEAM5032 T&R 1K - Tape and Reel (Alt: NX51C00001)
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    Avnet Americas NX51C00001 Reel 12 Weeks 1,000
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    Mouser Electronics NX51C00001
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    SkyHigh Memory Limited S40FC004C1B1C00001

    eMMC 4GB e.MMC5.1 BGA 11.5 x 13 x 0.8 mm MLC Enhanced Performance FW AND Old Process
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    Mouser Electronics S40FC004C1B1C00001
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    Rochester Electronics S40FC004C1B1C00001 38,224 1
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    Amphenol Corporation 10106131-C000001LF

    Power to the Board PWRBLADE+ REC VTL
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    Mouser Electronics 10106131-C000001LF
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    Balluff Inc BCC06UM (ALTERNATE: BCC M41C-0000-1A-049-PX0C25-100)

    BCC - Connectivity Products, BCC M41C-0000-1A-049-PX0C25-100 | Balluff BCC06UM
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    RS BCC06UM (ALTERNATE: BCC M41C-0000-1A-049-PX0C25-100) Bulk 2 1
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    1C00001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M28W320BB

    Abstract: M28W320BT
    Text: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■


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    PDF M28W320BT M28W320BB 100ns TFBGA47 M28W320BB M28W320BT

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


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    PDF F49L320UA/F49L320BA 304x8 152x16 9s/11s

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


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    PDF F49L320UA/F49L320BA 304x8 152x16 9s/11s

    Untitled

    Abstract: No abstract text available
    Text: ESMT F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands


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    PDF F49L160UA/F49L160BA 152x8 576x16 9s/11s

    MX29LV160CBTC-90

    Abstract: 29LV160C MX29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13
    Text: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of


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    PDF MX29LV160C 16M-BIT 2Mx8/1Mx16] 100mA Pac9/2006 MX29LV160CBTC-90 29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13

    Intel Stacked CSP

    Abstract: transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160
    Text: 3 Volt Intel Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology


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    PDF 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Intel Stacked CSP transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160

    MX29LV400

    Abstract: mx29LV160cbtc-70g MX29LV800C MX29LV160C MX29LV160CBTI-70G mx29lv160d MX29LV800CBTC-90G MX29LV800CTTC-70 MX29LV160CTTC-70G
    Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B MX29LV400C T/B, MX29LV800C T/B, MX29LV160C T/B DATASHEET The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the


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    PDF MX29LV400C MX29LV800C MX29LV160C MX29LV160D MX29LV400 mx29LV160cbtc-70g MX29LV160CBTI-70G MX29LV800CBTC-90G MX29LV800CTTC-70 MX29LV160CTTC-70G

    MX29LV033

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29LV033A 32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention


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    PDF MX29LV033A 32M-BIT 200nA 10-year PM1017 OCT/06/2003 MX29LV033

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


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    PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

    CR10

    Abstract: M58LR128HB M58LR128HT VFBGA56
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


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    PDF M58LR128HT M58LR128HB VFBGA56 CR10 M58LR128HB M58LR128HT VFBGA56

    Untitled

    Abstract: No abstract text available
    Text: F49L160UA/F49L160BA Operation Temperature condition -40 C~85 C 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 3.0V-3.6V Fast access time: 90 ns 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard


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    PDF F49L160UA/F49L160BA 152x8 576x16

    A0-A21

    Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


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    PDF M58WR064ET M58WR064EB 54MHz VFBGA56 A0-A21 CR10 M58WR064EB M58WR064ET VFBGA56

    code lock circuit flow chart

    Abstract: M28W320ECB M28W320ECT M28W320
    Text: M28W320ECT M28W320ECB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output ■ – VPP = 12V for fast Program (optional)


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    PDF M28W320ECT M28W320ECB 100ns TFBGA47 TSOP48 code lock circuit flow chart M28W320ECB M28W320ECT M28W320

    JESD97

    Abstract: M28W320FCB M28W320FCT
    Text: M28W320FCT M28W320FCB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory Feature summary • Supply Voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ Access Time: 70, 80, 90, 100ns


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    PDF M28W320FCT M28W320FCB JESD97 M28W320FCB M28W320FCT

    Untitled

    Abstract: No abstract text available
    Text: F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands


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    PDF F49L160UA/F49L160BA 152x8 576x16

    29070* intel

    Abstract: transistor w18 57 small
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed


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    PDF 28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 29070* intel transistor w18 57 small

    PF38F2030

    Abstract: 38F1030W0ZTQ0 PF38F2030W0YTQE 64W18 251407 PF38F1030W PF38F 38F1030W0ZBQ0
    Text: Intel Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit


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    PDF W18/W30 32-Mbit, 64-Mbit 32-Mbit 16-Mbit 64W18 64W30 64W30 RD38F2240WWZDQ0 PF38F2030 38F1030W0ZTQ0 PF38F2030W0YTQE 64W18 251407 PF38F1030W PF38F 38F1030W0ZBQ0

    Untitled

    Abstract: No abstract text available
    Text: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE SRAM 8 Mbit (512K x 16 bit) – VDDF = 1.65V to 2.2V ■ – VDDS = VDDQF = 2.7V to 3.3V


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    PDF M36WT864TF M36WT864BF 100ns M36WT864TF: 8810h M36WT864BF: 8811h

    Untitled

    Abstract: No abstract text available
    Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


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    PDF M58LR128HT M58LR128HB

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


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    PDF Am29LV033C 63-ball 40-pin

    T1A16

    Abstract: 29LV116
    Text: A M D ÎI Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and


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    PDF Am29LV116B ar116B T1A16 29LV116

    Untitled

    Abstract: No abstract text available
    Text: / A M D il A m 2 9 L V 0 1 7 B 16 Megabit 2 M x 8-Bit CM O S 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • S in g le p o w e r s u p p ly o p e ra tio n ■ Embedded Algorithms — Full voltage range: 2.7 to 3.6 volt read and write


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    PDF 16-038-TSOP-1 TSR040--40-Pin 16-038-TSOP-1 TSR040 Am29LV017B FGC048--48-Ball 16-038-FGC-2

    032XM

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMDB Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


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    PDF Am29LV033C 63-ball 40-pin 032XM

    29064

    Abstract: No abstract text available
    Text: in te l PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C3, 28F160C3, 28F320C3 x16 • ■ Improved 12 V Production Programming — Faster Production Programming — No Additional System Logic ■ 128-bit Protection Register — 64-bit Unique Device Identifier


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    PDF 28F800C3, 28F160C3, 28F320C3 64-KB Consump001 28F160C3 29064