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Abstract: No abstract text available
Text: «HYUNDAI HY5116160 Series 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116160
16-bit
16-bit.
HY5116160
1AD11-10-MAY94
HY5116160JC
HY5116160SLJC
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FT-63
Abstract: No abstract text available
Text: 'HYUNDAI H Y 5 1 V 4 8 1 0 B 5 1 2 K X 8- b lt C M O S DRAM w it h S e r ie s W r tte - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V4810B
p51V4810B
1AC20-00-MAYM
HY51V4810BJC
HY51V4810BSUC
HY51V4810BTC
FT-63
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM584000 Series SEMICONDUCTOR 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000 Is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.
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HYM584000
HY514100
HYM584000M
1BC01-20-MAY93
01-20-M
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