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    1DF01 Price and Stock

    TE Connectivity PRD-11DF0-110

    POWER RELAY ASSEMBLY
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    DigiKey PRD-11DF0-110 Bulk 20
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    Avnet Americas PRD-11DF0-110 Bulk 17 Weeks, 3 Days 20
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    Newark PRD-11DF0-110 Bulk 20
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    Master Electronics PRD-11DF0-110
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    Diodes Incorporated DF01M

    Bridge Rectifiers 100V 1A
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    Mouser Electronics DF01M 13,377
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    Diodes Incorporated DF01S-T

    Bridge Rectifiers 100V 1A
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    Mouser Electronics DF01S-T 5,146
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    Diodes Incorporated DF01S

    Bridge Rectifiers 1.0A 100V
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    Mouser Electronics DF01S
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    Siemens 1PH82241DF010EC1

    COMPACT ASYNCHRONOUS MOTOR | Siemens 1PH82241DF010EC1
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    RS 1PH82241DF010EC1 Bulk 10 Weeks 1
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    1DF01 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Y52 h 85c

    Abstract: ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 HD66522 1DD01 Y148 y158 0F076
    Text: HD66522 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display ADE-207-302(Z) '99.9 Rev. 0.0 Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This LSI incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped RAM, which is suitable for


    Original     		HD66522 160-Channel ADE-207-302 HD66522 Y52 h 85c ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 1DD01 Y148 y158 0F076 PDF

    datasheet tca 761

    Abstract: 1DF29 1DF27 1df*27 L239 y158 1DF28 TRANSZORB 24v Y4 n diode HD66522
    Text: HD66522 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This LSI incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped RAM, which is suitable for


    Original     		HD66522 160-Channel HD66522 A16A0 datasheet tca 761 1DF29 1DF27 1df*27 L239 y158 1DF28 TRANSZORB 24v Y4 n diode PDF

    Untitled

    Abstract: No abstract text available
    Text: HY638256 •HYUNDAI 32Kx 8-bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techni­


    OCR Scan     		HY638256 HY638256 15/17/20/25ns 150mA 140mA 130mA 300mil 1DF01-11-MAY94 00G3724 PDF

    Y52 h 85c

    Abstract: 1df2 D0200 3i10 OF129
    Text: HD66522 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display HITACHI Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This L S I incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped R A M , which is suitable for


    OCR Scan     		HD66522 160-Channel HD66522 Y52 h 85c 1df2 D0200 3i10 OF129 PDF

    hy538

    Abstract: No abstract text available
    Text: 'HYUNDAI 32K M B-bit HY53B256 CMOS FAST 5 RAM PHELIM INARY DESCRIPTION The HY53S256 is a high-speed 3Z.75S x S-bils CMOS static RAM fabricated using Hyundai's high perform ance twin tub CMOS process technology. This high reliability prncBSs coupled with high-speed circuit design techni­


    OCR Scan     		HY53B256 HY53S256 HY53B256 15/17/2D/25ns 1DFD1-11-MAYM HY53B255 300mil 29ZI7 335JB 1DFD1-11-MAYB4 hy538 PDF

    1DF27

    Abstract: BY160 0014f 1DE27 D0200 0024F 0F227
    Text: HD66522 Preliminary 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display HITACHI Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This LSI incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped RAM, which is suitable for


    OCR Scan     		HD66522 160-Channel HD66522 1DF27 BY160 0014f 1DE27 D0200 0024F 0F227 PDF

    HY638256T1

    Abstract: HY638256 AM524 HY638256J15
    Text: HY638256 -HYUNDAI CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode that guarantees


    OCR Scan     		HY638256 15/17/20/25ns 100mA 100pA T0-008 4b75DÃ 1DF01-22-MAY95 HY638256T1 AM524 HY638256J15 PDF

    HY638256

    Abstract: No abstract text available
    Text: HY638256 "H Y U N D A I CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design


    OCR Scan     		HY638256 HY638256 15/17/20/25ns 100mA 1DF01 -22-MA HY638256P PDF