ED36
Abstract: eb345 DSP56300 DSP56302 DSP56309 SC11 SC12
Text: MOTOROLA Semiconductor Products Sector Engineering Bulletin Functional Differences Between The 1F90S Mask of the DSP56302 and the 0J17D Mask of the DSP56309 This document summarizes the differences between the DSP56302 1F90S mask revision and the DSP56309, Rev A
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1F90S
DSP56302
0J17D
DSP56309
DSP56302
DSP56309,
DSP56309
DSP56302,
ED36
eb345
DSP56300
SC11
SC12
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ED36
Abstract: DSP56300 DSP56302 ES46 1F90S
Text: Chip Errata DSP56302 Digital Signal Processor Mask: 1F90S General remark: In order to prevent the usage of instructions or sequences of instructions that do not operate correctly, the user is encouraged to use the “lint563” program to identify such cases and use alternative sequences of instructions. This program is available as part of
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DSP56302
1F90S
lint563"
/ng/7/6/00
DSP56303
DSP56301
ED36
DSP56300
ES46
1F90S
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ED36
Abstract: DSP56300 DSP56302 DSP56309 EB345 SC11 SC12
Text: Freescale Semiconductor Engineering Bulletin EB345 Rev. 2, 10/2005 Functional Differences Between The 1F90S Mask of the DSP56302 and the 0J17D Mask of the DSP56309 This document summarizes the differences between the DSP56302 1F90S mask revision and the DSP56309, Rev A
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EB345
1F90S
DSP56302
0J17D
DSP56309
DSP56302
DSP56309,
DSP56309
ED36
DSP56300
EB345
SC11
SC12
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DSP56300
Abstract: DSP56302 ES46
Text: Freescale Semiconductor, Inc. Chip Errata DSP56302 Digital Signal Processor Mask: 1F90S Freescale Semiconductor, Inc. General remark: In order to prevent the usage of instructions or sequences of instructions that do not operate correctly, the user is encouraged to use the “lint563” program to identify
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DSP56302
1F90S
lint563"
DSP56303
DSP56301
DSP56300
DSP56303)
ES46
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Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/X Series TMP88CH41NG The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and
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TLCS-870/X
TMP88CH41NG
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Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/X Series TMP88CH41UG Revision History Date Revision 2007/7/24 1 First Release Table of Contents TMP88CH41UG 1.1 1.2 1.3 1.4 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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TLCS-870/X
TMP88CH41UG
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AT49BV320D
Abstract: AT49BV320DT SA70 AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3581D
AT49BV320D
AT49BV320DT
SA70
AT49BV
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w19b320
Abstract: No abstract text available
Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W19B320AT/B
w19b320
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/X Series TMP88F846UG 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/8 1 First Release 2009/9/3 2 Contents Revised Table of Contents TMP88F846UG 1.1 1.2 1.3 1.4
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TLCS-870/X
TMP88F846UG
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Untitled
Abstract: No abstract text available
Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3
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W28J320B/T
16/4M
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Untitled
Abstract: No abstract text available
Text: 8 Bit Microcontroller TLCS-870/X Series TMP88FH41UG 2009 TOSHIBA CORPORATION All Rights Reserved Revision History Date Revision 2008/2/7 1 First Release 2009/9/3 2 Contents Revised Table of Contents TMP88FH41UG 1.1 1.2 1.3 1.4
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TLCS-870/X
TMP88FH41UG
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Untitled
Abstract: No abstract text available
Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide
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W28F321BT/TT
32MBIT
W28F321,
W28F321
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LHF00L14
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LHF00L14 Flash Memory 32M 2MB x 16 (Model No.: LHF00L14) Spec No.: EL163055 Issue Date: March 15, 2004 LHF00L14 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LHF00L14
LHF00L14)
EL163055
LHF00L14
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FY520
Abstract: FW533 MT28F322D18
Text: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa
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MT28F322D18FH
100ns
MT28F322D18FH
FY520
FW533
MT28F322D18
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M28W320BB
Abstract: M28W320BT
Text: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■
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M28W320BT
M28W320BB
100ns
TFBGA47
M28W320BB
M28W320BT
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AT26DF161A-SSU
Abstract: AT26DF161A AT26DF161A-MU AT26DF161A-SU
Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks
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32-Kbyte
64-Kbyte
AT26DF161A-SSU
AT26DF161A
AT26DF161A-MU
AT26DF161A-SU
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4kw marking
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V
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DS05-50308-2E
MB84VD22280FA-70/MB84VD22290FA-70
MB84VD22280FE-70/MB84VD22290FE-70
59-ball
MB84VD22280FA/80FE/90FA/90FE
F0311
4kw marking
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
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DS05-20904-2E
MBM29DL32TF/BF-70
MBM29DL32TF/BF
MBM29DL32TF/BF
F0305
FPT-48P-M19
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SA70
Abstract: 2SA31
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
SA70
2SA31
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M29DW323D
Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
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M29DW324DT
M29DW324DB
TSOP48
M29DW323D
TSOP48 outline
M29DW323DB
M29DW323DT
M29DW324D
M29DW324DB
M29DW324DT
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M36DR432AD
Abstract: M36DR432BD
Text: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • Multiple Memory Product Figure 1. Package – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM
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M36DR432AD
M36DR432BD
256Kb
100ns,
120ns
0020h
LFBGA66
M36DR432AD:
00A0h
M36DR432AD
M36DR432BD
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard
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F49L320UA/F49L320BA
304x8
152x16
9s/11s
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mx29lv320ttc
Abstract: MX29LV320T Q0-Q15 SA10
Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention
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MX29LV320T/B
32M-BIT
200nA
10-year
64K-Byte
FEB/10/2003
MAR/26/2003
APR/23/2003
JUL/04/2003
mx29lv320ttc
MX29LV320T
Q0-Q15
SA10
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