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    Johanson Dielectrics Inc EMCP500W103M1GV001T

    Johanson X2Y 0603 10000PF 50V X7R
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    Mouser Electronics EMCP500W103M1GV001T
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    Johanson Dielectrics Inc EMCP101W472M1GV001T

    Johanson X2Y 0603 4700PF 100V X7R
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    • 1 $0.29
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    Johanson Dielectrics Inc EMCP100W104M1GV001T

    Johanson X2Y 0603 .1UF 10V X7R
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    Johanson Dielectrics Inc EMCP101W102M1GV001T

    Johanson X2Y 0603 1000PF 100V X7R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EMCP101W102M1GV001T
    • 1 $0.35
    • 10 $0.152
    • 100 $0.103
    • 1000 $0.087
    • 10000 $0.066
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    Johanson Dielectrics Inc EMCP101G100M1GV001T

    Johanson X2Y 0603 10PF 100V NP0
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EMCP101G100M1GV001T
    • 1 $0.35
    • 10 $0.237
    • 100 $0.142
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    • 10000 $0.077
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    1G MCP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG MCP

    Abstract: 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp
    Text: Preliminary MCP MEMORY K5D1G58KCM-D090 Document Title Multi-Chip Package MEMORY 1G Bit 128Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date 0.0 Initial issue. - 1Gb NAND A-Die_ Ver 0.3 - 256Mb Mobile SDRAM F-Die_Ver 1.1


    Original     		PDF K5D1G58KCM-D090 128Mx8) 2Mx32x4Banks) 256Mb 119-Ball SAMSUNG MCP 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp

    Micron 512MB nand FLASH

    Abstract: 64gb NAND chip micron nand flash chip 8gb Micron 1GB NAND FLASH nand flash 32gb x16 1g nand DDR mcp MCP NAND DDR MICRON mcp micron nand flash chip 16gb MT29C
    Text: MCP/PoP Part Numbering System Micron's part numbering system is available at www.micron.com/numbering Multichip Packages MT 29C 1G 12M A B A A Micron Technology IT ES Production Status AG = 16Gb BG = 32Gb CG = 64Gb DG = 128Gb LPDRAM Density 56M = 256Mb 24M = 1Gb


    Original     		PDF 128Gb 256Mb 512Mb 152Mb 640Mb 128Mb Micron 512MB nand FLASH 64gb NAND chip micron nand flash chip 8gb Micron 1GB NAND FLASH nand flash 32gb x16 1g nand DDR mcp MCP NAND DDR MICRON mcp micron nand flash chip 16gb MT29C

    Multicomp MCPAS6B2M1CE2

    Abstract: switches push button
    Text: Switches Push Button Specifications: Maximum current/voltage rating with resistive load : 400mA 32V ac, 100mA 50V dc and 125mA 125V ac. Maximum initial contact resistance : 50mΩ. Minimum insulation resistance : 1GΩ at 500V dc. Dielectric strength : 1000V ac rms.


    Original     		PDF 400mA 100mA 125mA Multicomp MCPAS6B2M1CE2 switches push button

    movinand

    Abstract: movinand DECODER 1g nand mcp movi nand S3C49VCX03 16G nand flash S3C49v 8G nand 16G nand MCP NAND
    Text: MOVI NAND Code Information 1/3 Last Updated : November 2008 KMXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 1. Memory (K) 9 10 11 12 13 14 15 16 17 18 4. MoviNAND Density & Vcc & Org. & BB Co de 2. MOVI NAND/MCP : M moviNAN D Den NAND Den Ce ll 3. Small Classification


    Original     		PDF

    SK6626

    Abstract: S3C49RAA01 MARKING CODE 16G S3C49VCX03 movinand DECODER error free nand movinand NAND 32G 2g nand mcp 64G nand
    Text: CTL_embedded NAND Code Information 1/3 Last Updated : November 2008 KLXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 8. VCC & VCCQ 2. MOVI NAND/MCP : L CTL : Controller 3. NAND Function E : Error Free NAND S : eSSD C : Cartridge SIP


    Original     		PDF

    MCP8540

    Abstract: No abstract text available
    Text: Integrated Communications Processors MPC8540 PowerQUICC III Processor Addressing the need for higher compute MCP8540 BLOCK DIAGRAM density and lower system cost, the Freescale MPC8540 PowerQUICC™ III integrated communications processor, built on Power


    Original     		PDF MPC8540 MCP8540 MPC8540 32-bit 32-bit, 783-pin MPC8540FACT

    512M 29

    Abstract: 1g mcp OneNAND mcp "NOR Flash" 16-BANK UtRAM Density sram 128m mrs marking
    Text: NOR-Flash Code Information 1/5 Last Updated : August 2009 K8XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 - De-Multiplexed Burst 12 : 512, 16Bank 26 : 128M, 8M / 16Bank / 66) 27 : 128M, 8M / 16Bank / 77) 28 : 128M, 8M / 16Bank 29 : 128M, 8M / 16Bank / 88)


    Original     		PDF 16Bank 16Bank 512M 29 1g mcp OneNAND mcp "NOR Flash" 16-BANK UtRAM Density sram 128m mrs marking

    DDR RAM 512M

    Abstract: DDR2 pcb design DMD1001 hyperlynx DDR2 layout PRF-38534 ddr2 ram pcb layout electronic schematic ddr2 ram chip DDR2 schematic
    Text: System in a Package System in a Package SiP SiP is a functional system or sub-system assembled into a single package. Typically it will contain two or more dissimilar die. For example: „ The combination of a processor, gate array, ASIC, RAM and flash memories.


    Original     		PDF DMD1001 DDR RAM 512M DDR2 pcb design DMD1001 hyperlynx DDR2 layout PRF-38534 ddr2 ram pcb layout electronic schematic ddr2 ram chip DDR2 schematic

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN3906A 1SV246 PIN Diode http://onsemi.com Dual series PIN Diode for VHF, UHF and AGC 50V, 50mA, rs=typ 5Ω, MCP Features • • • Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits


    Original     		PDF EN3906A 1SV246 1SV246-applied

    MCP1206FTE800

    Abstract: MCP1206FTE900 MCP0805FTE601
    Text: MULTILAYER FERRITE MCP POWER BEADS SPEER ELECTRONICS, INC. MULTI LAYER FERRITE POWER BEADS • Designed to reduce noise at frequencies • Standard EIA Packages: 0603, 0805, 1206 • Nickel Barrier with solder overcoat for excellent soderability • Magnetically Shielded


    Original     		PDF

    NANDA9R3N

    Abstract: NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM TFBGA137
    Text: NANDxxxxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features FBGA n MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 4-, 2x2-Gbit large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or


    Original     		PDF 2x512-, 256/512-Mbit x16/x32) TFBGA107 TFBGA137 LFBGA137 TFBGA149 VFBGA160 VFBGA152 TFBGA152 NANDA9R3N NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM

    PowerPC 60X Bus Interface controller

    Abstract: EDO FLASH DIMMs 72 pin map 3222 82660 EDO FLASH DIMMs tagram TEA 2111 IBM27-82660 52 signals PowerPC 601 IBM powerpc
    Text: PowerPC 60x Memory Controller and PCI Bridge IBM27-82660 Description Highlights General • Extensive programmability • Flexible and programmable error handling • Dual split bus structure CPU-PCI • Chipset options configured in register set • Two low-cost plastic quad flat packs


    Original     		PDF IBM27-82660 66MHz 33MHz, 07GK306400* GK10-3096-00 PowerPC 60X Bus Interface controller EDO FLASH DIMMs 72 pin map 3222 82660 EDO FLASH DIMMs tagram TEA 2111 52 signals PowerPC 601 IBM powerpc

    MT29F1G08ABCHC

    Abstract: mt29c MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr
    Text: Preliminary‡ 152-Ball NAND Flash and Mobile LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP ) MT29C Family Current production part numbers: See Table 1 on page 3 Features Figure 1:


    Original     		PDF 152-Ball MT29C 152-Ball 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29F1G08ABCHC MT29F4G16A mt29f1g08 MT29F1G08ABCHC-ET MT29C1G12 MT29F2G16ABDHC MT29F4G16AB MT29F1G16ABCHC-ET micron lpddr

    DSA003179

    Abstract: MCP1206P AHA12
    Text: KOA SPEER ELECTRONICS, INC. SS-220 R6 AHA 12/19/01 Multi Layer Ferrite Power Beads Type MCP CERTIFIED 1. General • Designed to reduce noise at high frequencies ■ Standard EIA Packages: 0603, 0805, 1206 ■ Nickel barrier with solder overcoat for excellent solderability


    Original     		PDF SS-220 DSA003179 MCP1206P AHA12

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-220 R5 Multi Layer Ferrite Power Beads Type MCP CERTIFIED 1. General • Designed to reduce noise at high frequencies ■ Standard EIA Packages: 0603, 0805, 1206 ■ Nickel barrier with solder overcoat for excellent solderability


    Original     		PDF SS-220

    0909NS

    Abstract: GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3
    Text: DRAM Code Information 1/9 K4XXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E : EDO F : FP G : GDDR5 SDRAM H : DDR SDRAM J : GDDR3 SDRAM K : Mobile SDRAM PEA


    Original     		PDF 16K/16ms 4K/32ms 8K/64ms 16K/32ms 8K/32ms 2K/16ms 4K/64ms 429ns 667ns 0909NS GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3

    36-05-019

    Abstract: renault Renault 36-05-019 porte-clips connector NF C 93-400 3605019 PBT 20 GF Tyco 36-05-019 5.5.3.2 Tyco porte-clips 2.8 mcp NF R 13-460
    Text: Spécification produit PORTE-LANGUETTES ETANCHE A 5 VOIES POUR CONTACTS 2,8 x 0,8 5 POS SEALED TAB HOUSING CONTACT 2.8 x 0.8 108-15221 24 JAN 05 Rév. D EC ER00-0011-05 1. BUT 1. BUT Cette spécification définit les caractéristiques générales ainsi que les performances électriques et mécaniques du porte-languettes étanche 5 voies équipés de


    Original     		PDF ER00-0011-05 36-05-019 renault Renault 36-05-019 porte-clips connector NF C 93-400 3605019 PBT 20 GF Tyco 36-05-019 5.5.3.2 Tyco porte-clips 2.8 mcp NF R 13-460

    tyco mcp 2.8 receptacle

    Abstract: PBT 20 GF Tyco tyco mcp 2.8 housing NF C 93-400 porte-clips connector schema electronic 3g Tyco porte-clips 2.8 mcp axe 10 NF C 93-400 5a 5 PIN MALE connector
    Text: Spécification produit PORTE-LANGUETTES ETANCHE A 5 VOIES POUR CONTACTS 2,8 x 0,8 5 POS SEALED TAB HOUSING CONTACT 2.8 x 0.8 108-15352 04 MAR 05 Rév. O 1. BUT 1. BUT Cette spécification définit les caractéristiques générales ainsi que les performances électriques et mécaniques du porte-languettes étanche 5 voies équipés de


    Original     		PDF

    MCP1812FTE700P

    Abstract: MCP1206FTE900 MCP0805FTE601 1806 TAPE SS-220
    Text: SS-220 R4 single 3/22/0 3:43 PM Page 1 SS-220 R4 Multi Layer Ferrite Power Beads Type MCP CERTIFIED 1. General • Designed to reduce noise at high frequencies ■ Standard EIA Packages: 0603, 0805, 1206, 1806, 1812 ■ Nickel barrier with solder overcoat for excellent solderability


    Original     		PDF SS-220 MCP1812FTE700P MCP1206FTE900 MCP0805FTE601 1806 TAPE

    BDS Thread

    Abstract: SMB600 3300A SMB-600 MSC8122 MSC8144 MSC8144ADS MSC8144E MSC8144EC utfb
    Text: Freescale Semiconductor Application Note Document Number: AN3439 Rev. 0, 09/2007 MSC8144 Ethernet Performance Maximizing QUICC Engine Throughput by Andrew Temple NCSG DSP Applications Freescale Semiconductor, Inc. Austin, TX This application note explains how to configure and run


    Original     		PDF AN3439 MSC8144 MSC8144ADS) BDS Thread SMB600 3300A SMB-600 MSC8122 MSC8144ADS MSC8144E MSC8144EC utfb

    Untitled

    Abstract: No abstract text available
    Text: THIS £L DRAWIN G IS UNPUBLISHED. C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION R 1G H T S 20 LOC R E V ISIONS DIST RESERVED. LTR P A R T N U M B E R C H A N G E S A ND OR D E S I G N C H A N G E S A F F E C T I N G ITEM


    OCR Scan     		PDF 04NOV UL94V-0 JAN2009 JAN2009 3IMAR2000

    2sk77

    Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
    Text: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications


    OCR Scan     		PDF 250mm 2SK212, 2SK315, 2SK544, 2SK669, 2SK1841 2SK2270. 2SK304, 2SK404, 2SK427, 2sk77 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j