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    1K X 4 STATIC RAM TTL Search Results

    1K X 4 STATIC RAM TTL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy

    1K X 4 STATIC RAM TTL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    X2212

    Abstract: X22C12 SOIC-18 FOOTPRINT
    Text: X22C12 X22C12 1K Bit 256 x 4 Nonvolatile Static RAM FEATURES DESCRIPTION • The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM STORE


    Original     		PDF X22C12 X22C12 --150ns 9-A-0065 X2212 SOIC-18 FOOTPRINT

    X2212

    Abstract: X22C12 3817
    Text: X22C12 X22C12 1K Bit 256 x 4 Nonvolatile Static RAM FEATURES DESCRIPTION • The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM STORE


    Original     		PDF X22C12 X22C12 --150ns X2212 3817

    X2212

    Abstract: X22C12
    Text: X22C12 X22C12 1K Bit 256 x 4 Nonvolatile Static RAM FEATURES DESCRIPTION • The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM STORE


    Original     		PDF X22C12 X22C12 --150ns X2212

    Untitled

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5101 MARCH 1995 DS3579-3.2 MA5101 RADIATION HARD 256 x 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,


    Original     		PDF MA5101 DS3579-3 MA5101

    MA5101

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5101 MARCH 1995 DS3579-3.2 MA5101 RADIATION HARD 256 x 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,


    Original     		PDF MA5101 DS3579-3 MA5101

    vdr 471 d14

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5101 MARCH 1995 DS3579-3.2 MA5101 RADIATION HARD 256 x 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,


    Original     		PDF MA5101 DS3579-3 MA5101 vdr 471 d14

    Untitled

    Abstract: No abstract text available
    Text: X22C12 1K Bit 256 x 4 Nonvolatile Static RAM DESCRIPTION • High Performance CMOS —150ns RAM Access Time • High Reliability —Store Cycles: 1,000,000 —Data Retention: 100 Years • Low Power Consumption —Active: 40mA Max. —Standby: 100µA Max.


    Original     		PDF X22C12 --150ns 18-Pin 300-mil X2212 18-Lead 20-Lead MIL-STD-883

    C1507

    Abstract: 7C150 C1502 C150 CY7C150 CY7C150-12DMB
    Text: CY7C150 1K x 4 Static RAM Features Functional Description D D The CY7C150 is a highĆperformance CMOS static RAM designed for use in cache memory, highĆspeed graphics, and dataĆacquisition applications. The CY7C150 has a memory reset feature that allows the entire memory to be reset in two


    Original     		PDF CY7C150 CY7C150 C1507 7C150 C1502 C150 CY7C150-12DMB

    LH5101

    Abstract: LH5101-30 intel 5101 5101 static ram
    Text: LH5101 CMOS 1K 256 x 4 Static RAM FEATURES DESCRIPTION • 256 x 4 bit organization • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption:


    OCR Scan     		PDF LH5101 22-pin, 300-mil 28-PIN LH5101 LH5101-30 LH5101-30 intel 5101 5101 static ram

    ic 5101 ram

    Abstract: 5101 RAM LH5101 LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram
    Text: LH5101 CMOS 1K 256 4 Static RAM x FEATURES DESCRIPTION • 256 • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Standby: 10 (.tA x


    OCR Scan     		PDF LH5101 22-pin, 300-mil LH5101 LH5101-30 ic 5101 ram 5101 RAM LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram

    1K x 4 static ram ttl

    Abstract: lh5114
    Text: LH5114 CMOS 4K 1K 4 Static RAM x DESCRIPTION FEATURES • 1,024 x 4 bit organization • Access tim e: • Power consumption: The LH5114H is a static RAM organized as 1,024 4 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. x 150 ns (MAX.)


    OCR Scan     		PDF LH5114 LH5114H 18-pin, 300-mil 14H-3 LH5114H-15 1K x 4 static ram ttl lh5114

    rj017

    Abstract: No abstract text available
    Text: IN T E GR AT ED DEVIC E 3fiE » • 4 Ô 2 S 77 1 DDG'lOig S B 1K X 36 2Kx36 CMOS DUAL-PORT STATIC RAM MODULE |cfty Integrated Dei/ice Technology, Inc. IDT PRELIMINARY IDT7M1011 J J ? 012 S 3- \4 FEATURES DESCRIPTION • High density 1K/2K x 36 CM OS Dual-Port Static RAM


    OCR Scan     		PDF 2Kx36 IDT7M1011 121-pin IDT7M1011/1DT7M1012 4A25771 MIL-STD883, 7M1011 7M1012 rj017

    52212HR

    Abstract: IN3064 256X4 ncr 400 256x4 static ram
    Text: C 52212 R 1K BIT 2 5 6 x 4 NVRAM 1K Bit Static RAM backed by 1K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit E2PROM Changes SRAM Cycle Time less than 300 ns • • • • Power-Failure Protection Unlimited Recall Cycles


    OCR Scan     		PDF 256x4) 52212HR IN3064 256X4 ncr 400 256x4 static ram

    Untitled

    Abstract: No abstract text available
    Text: 1K Commercial X2212A Jtor 2 5 6 x 4 Bit Nonvolatile Static RAM FEATURES • Single 5V Supply • Fully TTL Compatible • JEDEC Standard 18-Pin Package • Infinite E2PROM Array Recall, RAM Read and Write Cycles


    OCR Scan     		PDF X2212A 18-Pin X2212A

    LH5114H15

    Abstract: lh5114 1K x 8 static ram LH5114H 1K x 4 static ram ttl 1k x 4
    Text: LH5114 CMOS 4K 1K x 4 S ta tic RAM FEATURES DESCRIPTION • 1,024 x 4 bit organization The LH5114H is a static RAM organized as 1,024 x 4 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. • Access time: 150 ns (MAX.) • Power consumption:


    OCR Scan     		PDF LH5114 18-pin, 300-mil LH5114H 20-PIN 5114H-3 LH5114H-15 LH5114H15 lh5114 1K x 8 static ram 1K x 4 static ram ttl 1k x 4

    Untitled

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times


    OCR Scan     		PDF P4C150 24-Pin 28-Pin SMD-5962-88588 -15LM -20LM -25LM

    Untitled

    Abstract: No abstract text available
    Text: SiG E C P L E S S E Y SE M I CO N D U CT O RS DS3579-2.3 MA5101 RADIATION HARD 256 X 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3jam technology. The design uses a 6 transistor cell and has full static operation with


    OCR Scan     		PDF DS3579-2 MA5101 MA5101 GS010%

    e/MA3110

    Abstract: No abstract text available
    Text: IM S 1 2 2 3 i:. : !•■■■■ '■■■ cmos High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1 .6 Micron Design Rules • 1K x 4 Bit Organization • 25, 35, and 45 nsec Access Times


    OCR Scan     		PDF 45nsec 300-mil IMS1223 IMS1223 e/MA3110

    IMS1223A-25M

    Abstract: IMS1223M IMS1223S-25M
    Text: I IMS1223M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C DESCRIPTION FEATURES The INMOS IMS1223M is a high speed CMOS 1Kx4 static RAM processed in full compliance to MIL-STD883C. The IMS1223M provides performance enhance­ ments with the additional CMOS benefits of lower power


    OCR Scan     		PDF IMS1223M MIL-STD-883C 18-Pin, 300-mil MIL-STD-883C. IMS1223M IMS1223S-25M IMS1223A-25M IMS1223A-25M IMS1223S-25M

    IMS1223P-25

    Abstract: IMS1223P-35 IMS1223P-45 IMS1223S-25 IMS1223S-35 IMS1223S-45
    Text: IMS1223 CMOS High Performance 1K x 4 Static RAM mos FEATURES DESCRIPTION • INM OS'Very High Speed CMOS • • • • • • • • • • Advanced Process - 1.6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times


    OCR Scan     		PDF IMS1223 45nsec 300-mll IMS1223 IMS1223P-25 IMS1223P-35 IMS1223P-45 IMS1223S-25 IMS1223S-35 IMS1223S-45

    Untitled

    Abstract: No abstract text available
    Text: P4C151 ULTRA HIGH SPEED 1K x 4 RESETTABLE CACHE-TAG STATIC CMOS RAM SCRAM x f - FEATURES • Single Power Supply - 5V ±10% ■ Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times)


    OCR Scan     		PDF P4C151 MIL-STD-883C P4C151 -10PC -12PC -12DC -15PC -15DC -20PC -20DC

    Untitled

    Abstract: No abstract text available
    Text: IMS1223M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C M HO S’ DESCRIPTION FEATURES The INMOS IMS1223M is a high speed CMOS 1Kx4 static RAM processed in full compliance to MIL-STD883C. The IMS1223M provides performance enhance­ ments with the additional CMOS benefits of lower power


    OCR Scan     		PDF IMS1223M MIL-STD-883C IMS1223M MIL-STD883C. 3S-45M IMS1223A-45M

    intel 2102a

    Abstract: 2102AL
    Text: 2102A, 2102AL/8102A-4* 1K x 1 BIT STATIC RAM RAM P/N 2102AL-4 2102AL 2102AL-2 2102A-2 j i m 2102A-4 Operating Pwr. mW 174 174 342 342 289 289 Standby Pwr. (mW) 35 35 42 - - 5 Volts Supply Voltage SinglejHSJ/oits TDirectly TTL Compatible: All


    OCR Scan     		PDF 2102AL/8102A-4* 2102AL-4 2102AL 2102AL-2 102A-2 102A-4 2102AL) intel 2102a

    122325

    Abstract: No abstract text available
    Text: IMS1223 CMOS High Performance 1K x 4 Static RAM u ilT IO S FEATURES • • • • • • • • • • • DESCRIPTION INMOS' Very High Speed CMOS Advanced Process -1 .6 Micron Design Rules 1K x 4 Bit Organization 25, 35, and 45 nsec Access Times 25, 35, and 45nsec Chip Enable Access Times


    OCR Scan     		PDF IMS1223 45nsec 300-mil IMS1223 AdditionaIMS1223P-45 IMS1223S-45 122325