CSD1306
Abstract: No abstract text available
Text: 23633*14 QQ00Ô73 S3Ô CSD1306 >1L SILICON PLANAR EPITAXIAL TRANSISTOR N -P -N tra n s is to r PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C S D 1 3 0 6 E -6 E _3.0_ 2.8 0.14 0.48 Ö38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6
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CSD1306
CSD1306E-6E
CSD1306
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TBA 1205
Abstract: ZCA db TRANSISTOR TBA120S coa 6 pins IC TBA120 transistor Tba 40 12 pin ic Manufacturer Logos potentiometer 5 pins IF AMPLIFIER AND DETECTOR
Text: T B A 120 S YEBJIIFGIJMIIiSENj electronic Creative Technologies FM IF AMPLIFIER AND DETECTOR TECHNOLOGY: Bipolar Features: o Exceptional limiting sensitivity o Large power supply range o Minimum number of external components Case 14 pin dual inline plastic
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14-leads
TBA 1205
ZCA db TRANSISTOR
TBA120S
coa 6 pins IC
TBA120
transistor Tba 40
12 pin ic
Manufacturer Logos
potentiometer 5 pins
IF AMPLIFIER AND DETECTOR
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marking 1L
Abstract: 1L transistor 3 pin 1L MARKING
Text: SQ2181 CMOS Positive Voltage Regulator Elektronische Bauelemente RoHS Compliant Product Description The SQ2181 of positive, linear requlator feature low quiescent current 50 µA typ. with low dropout voltage and excellent PSRR, thus making them ideal for
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SQ2181
SQ2181
150mA
01-Jun-2002
marking 1L
1L transistor 3 pin
1L MARKING
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OB80
Abstract: transistor k 525
Text: SHARP LZ2354J LZ2354J 1/3 type B/W CCD Area Sensor for EIA PIN CONNECTIONS DESCRIPTION CCD AREA SENSORs LZ2354J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 410 000 pixels (horizontal 811 xve rtica l
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LZ2354J
16-pin
CERDIP494
493obi
OBBOB10
0b80b11
D137bti
0D1377D
OB80
transistor k 525
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bcs47
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. DESCRIPTION NPN transistor in a plastic SOT323 package. e M BBOÌ2 PINNING - SOT323 PIN DESCRIPTION 1 base 2
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BC846W;
BC847W;
BC848W
OT323
MBC870
BC846W:
BC846AW
BC846BW
BC847W:
bcs47
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION
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BC846W;
BC847W;
BC848W
OT323
MBC670
BC846AW:
BC846BW:
BC847W:
BC846W
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MARKING J1A
Abstract: BC846AW BC846BW BC846W BC847AW BC847BW BC847W BC848W transistor 1g
Text: • Philips Sem iconductors bbS3T31 ÜDEH'lil ‘îb? B A P X Product specification - 1N AP1ER PHILI P S / D I S C R E T E NPN general purpose transistor FEATURES b7E T> BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. I3! B DESCRIPTION
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BC846W;
BC847W;
BC848W
OT323
-SOT323
MBB012
BC846W:
BC846AW:
BC846BW:
BC847W:
MARKING J1A
BC846AW
BC846BW
BC846W
BC847AW
BC847BW
BC847W
BC848W
transistor 1g
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transistor smd zG
Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
Text: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband
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OT143
BFG17A
MSB014
OT143.
711062fci
711062b
7110A2L
transistor smd zG
npn zg
SMD Transistor zG
TRANSISTOR 610 smd
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Untitled
Abstract: No abstract text available
Text: SHARP LZ2353A LZ2353A 1/3 type Color CCD Area Sensor for NTSC DESCRIPTION 16-PIN SDIP <f>v4 [X <#V3 [ j T FEATURES • • • • • • • • • [3^ Number of pixels : 768 H x494 (V) 4>V1 [ 4 ] Pixel pitch : 6.4 y.m (H )x7.5 >uim (V) GND [ T Number of optical black pixels
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LZ2353A
16-PIN
GG137SS
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Untitled
Abstract: No abstract text available
Text: P h ilip s S e m icon du ctors • bbSB'lBl DDSM'IST ^b7 H A P X N ANER PHILIPS/DISCRETE b?E D' NPN general purpose transistor FE A T U R E S Product specification BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. S i _ EL DESCRIPTION NPN transistor in a plastic SOT323
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BC846W;
BC847W;
BC848W
OT323
MBC67
BC846W:
BC846AW
BC846BW
BC847W:
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201751
Abstract: 24v 8 channel Relay driver M54529P
Text: M54529P MITSUBISHI DGTL LOGIC S-UNIT 320mA TRANSISTOR ARRAY WITH STRO BE DESCRIPTION The M54529P, 5-channel sink driver, consists of 10 NPN tran sistors connected to form high current gain driver pairs. FEATUR ES • • • • PIN CONFIGURATION (TOP VIEW)
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M54529P
320mA
M54529P,
320mA
M54529P
300mA,
201751
24v 8 channel Relay driver
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M2003P
Abstract: No abstract text available
Text: MITSUBISHI ELEK -CLINEARI b2 DE fe GGGmDG 7 T-V3-2S INDUSTRY STANDARD LINEAR ICs MITSUBISHI M2003 SEMICONDUCTORS 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION The M2003, 7-channel sink driver, consists of 14 NPN transistors PIN CONFIGURATION TOP VIEW
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M2003
500mA
M2003,
M2003P
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M54597P
Abstract: No abstract text available
Text: t>3E • DD1S1SS DSE ■■ H I T B MITSUBISHI BIPOLAR DIGITAL ICs M54597P MITSUBISHI DGTL LOGIC 8-UNIT HIGH VOLTAGE 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION T h e M 5 4 5 9 7 P , 8 -c h a n n e l source driver, consists of 8 P N P PIN CONFIGURATION (TOP VIEW)
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M54597P
500mA
M54597P
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transistor BC SERIES
Abstract: BC848T TRANSISTOR BC 313 BC transistor series transistor Bc 580 846BT BC856T C847b transistor BC 312 BC847BT
Text: Philips Semiconductors Preliminary specification NPN general purpose transistors BC846T; BC847T; BC848T series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose sw itching and am plification, especially
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BC846T;
BC847T;
BC848T
SC-75
BC856T,
BC857T
BC858T
BC846AT
846BT
BC847AT
transistor BC SERIES
TRANSISTOR BC 313
BC transistor series
transistor Bc 580
BC856T
C847b
transistor BC 312
BC847BT
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smd transistor 6m
Abstract: No abstract text available
Text: OptoMOS Solid State Telecom Switches Relay Portion Pins 1,2,7,8 Engineering S pecificatio ns D ete cto r Portion (Pins 3 ,4 ,5 ,6 )* TS 117 Engineering S pecifications TS 117 O utput C haracteristics (Pins 7,8) O n-R esistance at 120 mA lLoaD(Ohms) Minimum
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LC125A
Abstract: M54594P
Text: M IT S U B IS H I B IP O L A R D IG IT A L ICs M 54594P 4-U N IT HIGH VO LTAGE l.S A DA RLIN G TO N T R A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION TOP VIEW The M 5 4 5 9 4 P 4 -c h a n n e l sink diver, consists of 8 N PN tran
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54594P
LC125A
M54594P
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TRANSISTOR regulator
Abstract: No abstract text available
Text: Optical disc ICs 4-channel BTL driver for CD players BA6997FP/BA6997FM The BA6997FP and BA6997FM, both designed for CD players, have an internal 4-channel BTL driver and 5V regula tor which requires attached PNP transistor , as well as switches for the 5V regulator and temperature monitor pins.
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BA6997FP/BA6997FM
BA6997FP
BA6997FM,
BA6997FM
TRANSISTOR regulator
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Transistor TT 2140
Abstract: npn transistor w27 b24jf 251C M54526P bipolar power transistor driver circuit bipolar dc clamp
Text: b 2 4 clflB 7 b3E D 0M 11D M IT S U B IS H I DGTL 51? H n iT 3 M ITSUBISHI BIPOLAR DIGITAL ICS M54526P LOGIC 7-U N IT 500m A DARLINGTON TR A N S IS TO R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 54526P, 7 -ch an n e l sink driver, consists of 14 N PN tran
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Jfl27
M54526P
M54526P,
500mA
M54526P
Transistor TT 2140
npn transistor w27
b24jf
251C
bipolar power transistor driver circuit
bipolar dc clamp
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FLH215
Abstract: No abstract text available
Text: SHARP LZ2364J LZ2364J 1/3 type B/W CCD Area Sensor for CCIR DESCRIPTION PIN CONNECTIONS LZ2364J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs(charge-coupled devices). Having approxi mately 470 000 pixels (horizontal 795 x vertical
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LZ2364J
0bs0b10
D0137fiS
LZ2364J
FLH215
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schematic of tny268
Abstract: TNY268 APPLICATION NOTE TNY268 U22 2.5A 250V tny268 Transformer SCR TL431 Specification TNY268P NTC 5R1 TNY268 with e 28 DER-60 TinySwitch-II TNY268P
Text: Design Example Report Title 8.75 W Power Supply using TNY268P Specification Input: 90 – 265VAC Output: 3.5V / 2.5A 4A peak Application Adapter Author Power Integrations Applications Department Document Number DER-60 Date May 27, 2005 Revision 1.0 Summary and Features
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TNY268P
265VAC
DER-60
EN55022B.
300mw
265VAC.
18AWG
schematic of tny268
TNY268 APPLICATION NOTE
TNY268
U22 2.5A 250V
tny268 Transformer
SCR TL431 Specification
TNY268P
NTC 5R1
TNY268 with e 28
DER-60 TinySwitch-II TNY268P
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transistor ai 757
Abstract: bF240 transistor AN 6752 philips BF240 philips
Text: DISCRETE SEMICONDUCTORS 1999 Apr 21 Product specification Supersedes data of 1998 Dec 02 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING • Low current max. 25 mA
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BF240
SCA63
5002/00/04/pp8
transistor ai 757
bF240 transistor
AN 6752
philips
BF240 philips
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BF370
Abstract: ai 972
Text: DISCRETE SEMICONDUCTORS 1999 Apr 21 Product specification Supersedes data of 1997 Jul 11 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN medium frequency transistor BF370 PINNING FEATURES • Low current max. 100 mA
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BF370
SCA63
5002/00/03/pp8
BF370
ai 972
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Untitled
Abstract: No abstract text available
Text: SHARP LZ2314AK 1 /3 type B/W CCD Area Sensor for EIA PIN CONNECTIONS DESCRIPTION LZ2314AK is a 1/3-type 6.0 mm solid-state im age sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 270 000 pixels (horizontal 542 x vertical
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LZ2314AK
LZ2314AK
16-piri
WDIP016-N-05n
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 PMST6428; PMST6429 NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 12 1999 Apr 22 NXP Semiconductors Product data sheet NPN general purpose transistors PMST6428; PMST6429 PINNING
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M3D187
PMST6428;
PMST6429
SC-70;
OT323
PMST6428
115002/00/03/pp6
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