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    1N 043 DIODE Search Results

    1N 043 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1N 043 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PSD705

    Abstract: No abstract text available
    Text: PSD705 thru PSD706 SURFACE MOUNT SCHOTTKY BARRIER DIODES SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS SOT-23 .014 0.35 .020(0.51) TOP VIEW .033(0.85) .041(1.05) .018(0.46) .039(1.00) 1.06(2.70) 1.22(3.10) .047(1.19) 083(2.10) .055(1.4) 1.18(3.0) .067(1.70)


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    PDF PSD705 PSD706 OT-23 OT-23

    RD10MW

    Abstract: RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD20MW RD39MW RD7.5MW
    Text: データ・シート 定電圧ダイオード Zener Diode RD2.0MW~RD39MW 200 mW プレ−ナ形シリコンダブル定電圧ダイオ−ド(アノ−ド共通) 外形図(単位:mm) RD2.4MW ∼ RD9.1MW は許容損失 200 mW のプレ−ナ形ダブ


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    PDF 0MWRD39MW EIAJSC-59 SC-59 D10247JJ5V0DS00 RD10MW RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD20MW RD39MW RD7.5MW

    diode 1N 1442

    Abstract: n 332 ab TT 2076 RD33ES RD39ES RD10ES RD11ES RD12ES RD13ES RD15ES
    Text: データ・シート 定電圧ダイオード Zener Diodes RD2.0ES~RD39ES 400 mWプレーナ形小形パッケージ DHD構造シリコン定電圧ダイオード RD2.0ES∼RD39ESは許容損失が400 mWのプレーナ形ガラスシ 外形図(単位:mm)


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    PDF 0ESRD39ES 0ESRD39ES400 DO-34JEDEC D13935JJ6V0DS00 SC-5036D diode 1N 1442 n 332 ab TT 2076 RD33ES RD39ES RD10ES RD11ES RD12ES RD13ES RD15ES

    RD16JS

    Abstract: RD10JS RD11JS RD12JS RD13JS RD15JS RD18JS RD39JS RD51 1b2 zener
    Text: データ・シート 定電圧ダイオード Zener Diodes RD4.7JS~RD39JS 400 mWプレーナ形小形パッケージ DHD構造シリコン定電圧ダイオード RD4.7JS∼RD39JSは許容損失400 mWのプレーナ形ガラス封止DHD 外形図(単位:mm)


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    PDF 7JSRD39JS 7JSRD39JS400 7JSRD39JSABAB1AB3 DO-34JEDEC D13937JJ5V0DS00 SC-5023C RD16JS RD10JS RD11JS RD12JS RD13JS RD15JS RD18JS RD39JS RD51 1b2 zener

    schottky diode sod-123 marking code 1M

    Abstract: No abstract text available
    Text: FM120-M+ 66 WILLAS THRU LESHAN RADIO COMPANY, LTD. FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Switching diode 6:,7&+,1*'LRGHV SOD-523 Package outline L1SS400GT1G .035 0.90 .028(0.70) • Applications


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    PDF OD-123+ FM120-M+ FM1200-M+ OD-523 FM180-MH FM1100-MH FM1150-MH FM1200-MH FM120-MH FM130-MH schottky diode sod-123 marking code 1M

    KSG-173

    Abstract: connectors KSG-203 BERG STRIP female 173114 rightangled subminiature connector BERG strip connector dimension
    Text: Table of contents Cable housings for connectors to DIN 41 612 and VG 95 324 General, Patterns, Packing Dimensions Technical data, Coding system Cable housings KSG 173 for connectors type B, C, D, E, H11, H15, Q, R KSG 203 for female connectors type F KSG 253 for female ribbon-cable IDC -connectors type C


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    MOV 103 M 3 KV

    Abstract: No abstract text available
    Text: Power Switching & Controls For Business-Critical ContinuityTM Grid to Chip Surge Protection Product Catalog Contact Surge Protection 100 Emerson Parkway Binghamton, NY 13905 T: 607-721-8840 Outside U.S. T: 800-288-6169 (U.S. & Canada Only) F: 607-722-8713


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    PDF SL-30900 MOV 103 M 3 KV

    7824 5A

    Abstract: 7824 3A C10535J C10943X IEC1000 NNCD10A NNCD11A NNCD12A NEC NNCD4.7A
    Text: データ・シート 静電気ノイズクリッピングダイオード NNCD3.3A~NNCD12A ESD ノイズクリッピング・ダイオード(400 mWタイプ) 本製品シリーズは,ESDノイズ保護用に開発したダイオードで 外形図(単位:mm)


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    PDF 3ANNCD12A IEC1000-4-230 DO-34 D11769JJ2V1DS00 108-0171NEC 46017NEC 54024NEC 7824 5A 7824 3A C10535J C10943X IEC1000 NNCD10A NNCD11A NNCD12A NEC NNCD4.7A

    C10535J

    Abstract: C10943X IEC1000 NNCD10B NNCD11B NNCD12B 1N 043 diode
    Text: データ・シート 静電気ノイズクリッピングダイオード NNCD3.3B~NNCD12B ESD ノイズクリッピング・ダイオード(500 mWタイプ) 本製品シリーズは,ESDノイズ保護用に開発したダイオードで 外形図(単位:mm)


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    PDF 3BNNCD12B IEC1000-4-230 DO-35 D11770JJ2V1DS00 108-0171NEC 46017NEC 54024NEC C10535J C10943X IEC1000 NNCD10B NNCD11B NNCD12B 1N 043 diode

    sn0636

    Abstract: SH 2104 MCP6546 MCP6546R MCP6546U MCP6547 MCP6548 MCP6549
    Text: MCP6546/6R/6U/7/8/9 Open-Drain Output Sub-Microamp Comparators Features Description • • • • • • • • • • • The Microchip Technology Inc. MCP6546/7/8/9 family of comparators is offered in single MCP6546, MCP6546R, MCP6546U , single with chip select


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    PDF MCP6546/6R/6U/7/8/9 MCP6546/7/8/9 MCP6546, MCP6546R, MCP6546U) MCP6548) MCP6547) MCP6549) OT-23-5, SC-70-5 sn0636 SH 2104 MCP6546 MCP6546R MCP6546U MCP6547 MCP6548 MCP6549

    national semiconductor cmos

    Abstract: op-amp integrator mhz application for high gain cmos opamp circuit operational hindi ma LMC6041 LMC6044 LMC6062 LMC6082 LMC660
    Text: National Semiconductor Application Note 856 David Hindi September 1992 ABSTRACT A SPICE macromodel that captures the ‘‘personality’’ of National Semiconductor’s CMOS op-amps has been developed The salient features of the macromodel are a MOSFET input stage Miller compensation and a currentsource output stage A description of the model will be given


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    PDF 20-3A national semiconductor cmos op-amp integrator mhz application for high gain cmos opamp circuit operational hindi ma LMC6041 LMC6044 LMC6062 LMC6082 LMC660

    RD10MW

    Abstract: RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD20MW RD39MW iza marking
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF 0MWRD39MW EIAJSC-59 RD10MW RD11MW RD12MW RD13MW RD15MW RD16MW RD18MW RD20MW RD39MW iza marking

    SC1301

    Abstract: SC4431 SC4809AIMSTR SC4809AIMSTRT SC4809BIMSTR SC4809BIMSTRT SC4809CIMSTR SC4809CIMSTRT EFD15 5v flyback flyback transformer sanyo
    Text: SC4809A/B/C High Performance Current Mode PWM Controller POWER MANAGEMENT Description Features The SC4809A/B/C is a 10 pin BICMOS primary side current mode controller for use in Isolated DC-DC and off-line switching power supplies. It is a highly integrated


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    PDF SC4809A/B/C SC4809A/B/C MO-187, MSOP-10 SC1301 SC4431 SC4809AIMSTR SC4809AIMSTRT SC4809BIMSTR SC4809BIMSTRT SC4809CIMSTR SC4809CIMSTRT EFD15 5v flyback flyback transformer sanyo

    Diode BAY 46

    Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
    Text: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j


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    PDF 1N456 BAW21A 1N456 BAX12 CB-102) CB-104) Diode BAY 46 Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode

    Diode BAY 46

    Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
    Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a


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    PDF 1N456 BAW21A SFD79 CB-26) baw55 CB-127 CB-127. Diode BAY 46 Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41

    Diode BAY 71

    Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
    Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a


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    PDF 1N456 BAW21A BAW75 BAW76 BAX84 SFD43 CB-104) 34/CB-104) CB-127 CB-127. Diode BAY 71 Diode BAY 45 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49

    Diode BAY 21

    Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
    Text: general purpose and sw itching diode selector guide guide de sélection diodes de commutation et usage général t h o m s o n -c s f Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 €£043 1N456 25 J 1N 456 A W 449)1 1 rtm a a j


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    PDF 1N456 BAW21A CB-26) Diode BAY 21 Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D

    1N6325

    Abstract: 1N6327 JAN
    Text: 1N 6309 thru 1N 6355 / /' Microsemi Corp. ' The d/oOe experts SCOTTSDALE. A Z SANTA ANA, CA For m ore inform ation call: 714 979-8220 500 mW Glass Zener Diodes FEATURES • VOIOLESS HERMETICALLY SEALED GLASS PACKAGE • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION


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    PDF MIL-S-19500/533 IN6309 IN6336 1N6309 1N6310 1N6311 1N6312 1N6313 1N6314 1N6315 1N6325 1N6327 JAN

    Untitled

    Abstract: No abstract text available
    Text: 1N 6309 thru 1N 6355 M ierosemi Corp. The dio d e experts- SANTA A N A , CA F o r m o r e in f o r m a ti o n call: 714 979-8220 500 mW Glass Zener Diodes FEATURES VOIDLESS HERMETICALLY SEALED GLASS PACKAGE >MICROMINIATURE PACKAGE . TRIPLE LAYER PASSIVATION


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    PDF MlL-S-19500/533 1N6309 1N6336 MIL-S-19500/533 1N6320-1N6336 1N6310 1N6311 1N6312 1M6313

    1n523

    Abstract: 1N551 1N5519 1N5520 1N5521 1N5522 1N5524 1N5525 1N5526 1N5528
    Text: 1 9 B9963 CENTRAL SEMICONDUCTOR hi g BEÊPai De J iV ö ^T]] QDOOETT 3 g^a&ESQBBSSOISÊ !? @®Fg Csntral m central semiconductor Corp. iiis §@waie©iitäiyG£iw «»¿•fry g©&sii£@siefüeter C©rp. m m a S |~~ 1135518, A, B, C, D 3> THRU 1N55U6, A, B, C, D


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    PDF 000E7cà 1N55U6, 1N551à CBR30 0000S23 O-105 O-106 1n523 1N551 1N5519 1N5520 1N5521 1N5522 1N5524 1N5525 1N5526 1N5528

    1s553

    Abstract: IN5527 zener til 431 zener 431 1N551 1N5519 1N5520 1N5521 1N523 1N5524
    Text: 19 B9963 CENTRAL SEMICONDUCTOR hi g BEÊPai g^a&ESQBBSSOISÊ !? @®Fg iV ö ^T]] QDOOETT wmmm mmm. §@waie©iitäiyG£oF Csntral g©&sii£@siefüeter C©rp. «»¿•fry De J central semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11788 1 61C 00279


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    PDF 000E7cà 1N55U6, 1N551à 1N5544 1N5545 1N5546. 1s553 IN5527 zener til 431 zener 431 1N551 1N5519 1N5520 1N5521 1N523 1N5524

    diode 0a47

    Abstract: DIODE OA91 OA95 diode OA90 diode oa47 diode DIODE OA90 OA91 diode OA1182 0a47 diode germanium oa95
    Text: B K C INTERNATIONAL 30E D • 1 1 7 H 4 3 0000355 ? ■ x iiL lL H - d - . -pOl-OT i 6 Lake Street PO Box 1436 Lawrence. MA 01841 617)681-0392 (508) 681-0392 BK C International Electronics Inc. Gold Bond Germanium Diodes TYPE G1607 FEATURES Low forward voltage drop


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    PDF 117T1Ã G1607 300mA MIL-S-19500, diode 0a47 DIODE OA91 OA95 diode OA90 diode oa47 diode DIODE OA90 OA91 diode OA1182 0a47 diode germanium oa95

    1N523

    Abstract: No abstract text available
    Text: 19 B9963 CENTRAL SEMICONDUCTOR h i g BEÊPai g^a&ESQBBSSOISÊ !? @ ® F g D e J iV ö ^T]] QDOOETT 3 |~~ 1135518, A, B, C, D §@waie©iitäiyG£oF w Csntral m m THRU m central semiconductor Corp. 3> 1N55U6, A, B, C, D g©&sii£@siefüeter C©rp. «»¿•fry


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    PDF B9963 1N55U6, 1N5518 CBR25Ser/es CBR30 0000SE3 O-105 O-106 1N523

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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