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    1N4007 SILICON Search Results

    1N4007 SILICON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    P104 Coilcraft Inc Silicon Controlled Rectifier, Visit Coilcraft Inc
    5962-8757701RA Renesas Electronics Corporation Microcircuit, CMOS, Octal Bus Transceiver, Monolithic Silicon Visit Renesas Electronics Corporation
    HXT45430-DNU Renesas Electronics Corporation 112Gb/s PAM4 Silicon Photonic Modulator Driver Visit Renesas Electronics Corporation

    1N4007 SILICON Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Dioden

    Abstract: 1N4007 diode 1N4007 EM518 EM513 1n4007 diode 1N4007 equivalent 1N4007/1N4007 1N4001 DO-204AL
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2009-10-16 Nominal current Nennstrom -0.1 5.1-0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07


    Original     		1N4001 1N4007, 1N4007-13, EM513, EM516, EM518 Dioden 1N4007 diode 1N4007 EM518 EM513 1n4007 diode 1N4007 equivalent 1N4007/1N4007 1N4001 DO-204AL PDF

    EM513

    Abstract: EM518
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-21 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -4.5 Ø 2.6 Ø 0.77±0.07


    Original     		1N4001 1N4007, 1N4007-13, EM513, EM516, EM518 EM513 EM518 PDF

    em516

    Abstract: No abstract text available
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-10-30 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07


    Original     		1N4001 1N4007, 1N4007-13, EM513, EM516, EM518 em516 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-17 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07


    Original     		1N4001 1N4007, 1N4007-13, EM513, EM516, EM518 PDF

    threshold voltage 1n4007

    Abstract: 1N4007 1n4007 max voltage of 1n4007 1N4007H
    Text: 1N4007 Silicon Rectifier. Case Molded Plastic. Maximum Recurrent Peak Reverse Volta. Page 1 of 1 Enter Your Part # Home Part Number: 1N4007 Online Store 1N4007 Diodes Silicon Rectifier. Case Molded Plastic. Maximum Recurrent Transistors Integrated Circuits


    Original     		1N4007 1N4007 DO-41 com/1n4007 threshold voltage 1n4007 1n4007 max voltage of 1n4007 1N4007H PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 . 1N4007, 1N4007-1300 EM513, EM516, EM518 Silicon Rectifiers Silizium Gleichrichter Version 2004-10-01 Nominal current Nennstrom -0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…2000 V Plastic case Kunststoffgehäuse 5.1 -0.1


    Original     		1N4001 1N4007, 1N4007-1300 EM513, EM516, EM518 DO-41 DO-204AL UL94V-0 PDF

    CHARACTERISTICS DIODE 1N4007

    Abstract: diode 1N4001 specifications 1N4007 RECTIFIER DIODE DIODE 1N4001 specifications of 1n4007 diode data sheet 1N4007 diode diode 1N4007 specifications diode cross reference 1N4002 1n4007 diode datasheet DIODE 1N4004
    Text: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


    Original     		1N4001 1N4007 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. CHARACTERISTICS DIODE 1N4007 diode 1N4001 specifications 1N4007 RECTIFIER DIODE DIODE 1N4001 specifications of 1n4007 diode data sheet 1N4007 diode diode 1N4007 specifications diode cross reference 1N4002 1n4007 diode datasheet DIODE 1N4004 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 thru 1N4007 Pb Free Plating Product Pb 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Features Unit: inch mm • Low forward voltage drop • High current capability • High surge current capability .034(.86) 1.0(25.4)MIN. .028(.71)


    Original     		1N4001 1N4007 DO-41 DO-41 MIL-STD-202 PDF

    diode 1N4001 specifications

    Abstract: CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics silicon diode 1N4001 specifications OF 1N4001 DIODE Diode Marking 1N4004 surge current DIODE 1N4007 CHARACTERISTICS DIODE 1N4006 1N4007 10A features of DIODE 1N4001
    Text: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


    Original     		1N4001 1N4007 1000hrs. MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 diode 1N4001 specifications CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics silicon diode 1N4001 specifications OF 1N4001 DIODE Diode Marking 1N4004 surge current DIODE 1N4007 CHARACTERISTICS DIODE 1N4006 1N4007 10A features of DIODE 1N4001 PDF

    silicon diode 1N4001 specifications

    Abstract: 1N4001 rectifier diode 1N4001 specifications
    Text: Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


    Original     		1N4001 1N4007 MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1051 silicon diode 1N4001 specifications 1N4001 rectifier diode 1N4001 specifications PDF

    diode cross reference 1N4007

    Abstract: diode cross reference 1N4002
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List. 1 Package outline. 2


    Original     		1N4001 1N4007 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. diode cross reference 1N4007 diode cross reference 1N4002 PDF

    DO-41

    Abstract: diode 1N4001 specifications 1n4001
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List. 1 Package outline. 2


    Original     		1N4001 1N4007 MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs. DO-41 diode 1N4001 specifications PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 THRU RECTIFIER SPECIALISTS R 1N4007 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41 MECHANICAL DATA * *


    Original     		1N4001 1N4007 DO-41 MIL-STD-202E, 1N4004 1N4005 1N4001 1N4007) PDF

    1N4007

    Abstract: 1N4001
    Text: 1N4001 THRU 1N4007 GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES DO-41 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique


    Original     		1N4001 1N4007 DO-41 DO-41 MIL-STD-7525 1N4007 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 thru 1N4007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere PLASTIC SILICON RECTIFIERS DO- 41 FEATURES ●Low cost ●Diffused junction ●Low forward voltage drop ●Low reverse leakage current 1.0 25.4 MIN. ●High current capability


    Original     		1N4001 1N4007 DO-41 300us 03-Aug-2012 PDF

    1N4001

    Abstract: 1N4002 1N4003 1N4004 1N4005 1N4007 RECTRON 1n4004
    Text: 1N4001 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4007 SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41 MECHANICAL DATA * * * * * Case: Molded plastic


    Original     		1N4001 1N4007 DO-41 MIL-STD-202E 300uS 1N4001 1N4002 1N4003 1N4004 1N4005 1N4007 RECTRON 1n4004 PDF

    1N4001

    Abstract: 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
    Text: 1N4001 THRU 1N4007 PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Ampere Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Low forward voltage • High current capability


    Original     		1N4001 1N4007 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 PDF

    1N4001

    Abstract: 1N4002 1N4003 1N4004 1N4005 1N4007 free 1N4007 ir 9840
    Text: 1 AMP SILICON RECTIFIERS 1N4001 THRU 1N4007 TECHNICAL SPECIFICATION VOLTAGE FEATURES 50 to 1000 Volts Low cost construction utilising void - free moulded plastic technique Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Diffused junction


    Original     		1N4001 1N4007 375in. DO-41 50mVp-p 1N4002 1N4003 1N4004 1N4005 1N4007 free 1N4007 ir 9840 PDF

    specifications of 1n4007 diode

    Abstract: diode 1N4001 specifications 1N4002 diode download datasheet Diode 1N4001 50V 1.0A DO-41 Rectifier Diode diode 1N4007 specifications diode 1n4001 data sheet diode 1N4007 diode 1n4007 datasheet Diode Equivalent 1N4001 silicon diode 1N4001 specifications
    Text: 1N4001 THRU 1N4007 Elektronische Bauelemente VOLTAGE 50V ~ 1000V 1.0 AMP Silicon Rectifiers A suffix of "-C" indicates halogen-free & RoHS Compliant DO-41 ƔFEATURES .107 2.7 .080(2.0) DIA. . RoHS Compliant Product . Low Forward Voltage Drop . High Current Capability


    Original     		1N4001 1N4007 DO-41 MIL-STD-202, 01-Jun-2002 specifications of 1n4007 diode diode 1N4001 specifications 1N4002 diode download datasheet Diode 1N4001 50V 1.0A DO-41 Rectifier Diode diode 1N4007 specifications diode 1n4001 data sheet diode 1N4007 diode 1n4007 datasheet Diode Equivalent 1N4001 silicon diode 1N4001 specifications PDF

    1N4001

    Abstract: 1N4007
    Text: HITANO ENTERPRISE CORP. 1N4001 THRU 1N4007 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41 MECHANICAL DATA * *


    Original     		1N4001 1N4007 DO-41 MIL-STD-202E, 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 PDF

    1N4001/1n4007 diode datasheet

    Abstract: 1N4001-1N4007 diode 1N 4001 1N4001-1N4007 datasheet 4001 1n diode 1n 4007 diode 1n4007 diode 4001 silicon diode 1N 4001 diode 1N4001/1n4007 diode
    Text: 1N4001-1N4007, BY133 Pb 1.0 AMPS. Silicon Rectifiers DO-41 RoHS COMPLIANCE Features High current capability. High efficiency, Low VF. High surge current capability. Low prwer loss Green compound with suffix "G" on packing code and Prefix "G" on date code.


    Original     		1N4001-1N4007, BY133 DO-41 MILSTD-202, 260oC/10 1N4001/1n4007 diode datasheet 1N4001-1N4007 diode 1N 4001 1N4001-1N4007 datasheet 4001 1n diode 1n 4007 diode 1n4007 diode 4001 silicon diode 1N 4001 diode 1N4001/1n4007 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES


    Original     		1N4001 1N4007 BY133 DO-41 UL94V-O PDF

    SMD DIODE 513

    Abstract: No abstract text available
    Text: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V


    OCR Scan     		1N4001. 1N4007, 1N4007-1300 DO-41 UL94V-0 40eel R0D1RS14 000017S SMD DIODE 513 PDF

    EQUIVALENT OF 1N4001

    Abstract: 1N4001 EQUIVALENT 1N 4007 TY
    Text: 1N4001 THRU 1N4007 MINIATURE PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES ♦ The plastic package carries Underwriters Laboratory Fiammability Classification 94V-0 ♦ Low cost construction utilizing void-free molded plastic technique


    OCR Scan     		1N4001 1N4007 DO-41, EQUIVALENT OF 1N4001 1N4001 EQUIVALENT 1N 4007 TY PDF