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    1N4007G Search Results

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    1N4007G Price and Stock

    SMC Diode Solutions 1N4007G

    DIODE GEN PURP 1KV 1A DO41
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    DigiKey 1N4007G Cut Tape 83,773 1
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    1N4007G Ammo Pack 80,000 5,000
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    Vishay Semiconductors 1N4007GP-E3-73

    DIODE GEN PURP 1KV 1A DO204AL
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    DigiKey 1N4007GP-E3-73 Ammo Pack 42,000 3,000
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    Taiwan Semiconductor 1N4007G

    DIODE GEN PURP 1KV 1A DO204AL
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    DigiKey 1N4007G Cut Tape 22,969 1
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    1N4007G Reel 15,000 5,000
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    Avnet Americas 1N4007G Reel 6 Weeks 10,000
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    Mouser Electronics 1N4007G 16,633
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    Verical 1N4007G 3,834 3,834
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    Arrow Electronics 1N4007G 3,834 20 Weeks 3,834
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    Newark 1N4007G Bulk 37,582 5
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    Future Electronics 1N4007G Reel 20 Weeks 5,000
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    Quest Components 1N4007G 198
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    Avnet Asia 1N4007G 6 Weeks 10,000
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    EBV Elektronik 1N4007G 8 Weeks 5,000
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    Vishay Semiconductors 1N4007GPE-E3-54

    DIODE GEN PURP 1KV 1A DO204AL
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    DigiKey 1N4007GPE-E3-54 Cut Tape 20,675 1
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    Taiwan Semiconductor 1N4007G-A0G

    DIODE GEN PURP 1KV 1A DO204AL
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    DigiKey 1N4007G-A0G Cut Tape 14,113 1
    • 1 $0.17
    • 10 $0.117
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    • 1000 $0.05369
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    1N4007G-A0G Ammo Pack 9,000 3,000
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    1N4007G Datasheets (113)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N4007G Bytes 1.0 AMP GLASS PASSIVATED RECTIFIERS Original PDF
    1N4007-G Comchip Technology Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURPOSE 1000V 1A DO41 Original PDF
    1N4007G DC Components TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED RECTIFIER Original PDF
    1N4007G Diodes DIODE STANDARD RECOVERY RECTIFIER 1000V 1A 2DO-41 Original PDF
    1N4007G Diodes 1.0A GLASS PASSIVATED RECTIFIER Original PDF
    1N4007G Diodes Short Form Selection Guide Original PDF
    1N4007G Diodes 1.0A GLASS PASSIVATED RECTIFIER Original PDF
    1N4007G Diotec Diode, 1A, 1000V, Soft Glass Passivated Silicon Diode Original PDF
    1N4007G EIC Semiconductor GLASS PASSIVATED JUNCTION SILICON RECTIFIERS Original PDF
    1N4007G FCI Diode, 1A, 1000V, Glass Passivated Miniature Plastic Silicon Diode Original PDF
    1N4007G Formosa 1.0 AMP GLASS PASSIVATED RECTIFIERS Original PDF
    1N4007G Good-Ark GLASS PASSIVATED JUNCTION RECTIFIER Original PDF
    1N4007G Leshan Radio Company 1A GENERAL PURPOSE GPP DIODES Original PDF
    1N4007G Lite-On Technology 1000V, 1.0A glass passivated rectifier Original PDF
    1N4007G Micro Electronic Instrument GLASS PASSIVATED RECTIFIER Original PDF
    1N4007G On Semiconductor DIODE STANDARD RECOVERY RECTIFIER 1000V 1A 2AXIAL LEAD Original PDF
    1N4007G On Semiconductor 1A 1000V Standard Rectifier; Package: Axial Lead 5.20x2.70mm, 25.4x0.71mm Pkg, Lead len/dia; No of Pins: 2; Container: Bulk; Qty per Container: 1000 Original PDF
    1N4007G On Semiconductor 1N4007 - DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41, LEAD FREE, PLASTIC, CASE 59-10, 2 PIN, Signal Diode Original PDF
    1N4007G Philips Semiconductors Rectifiers Original PDF
    1N4007G Rectron Semiconductor Diode, 1A, 1000V, Glass Passivated Junction Diode Original PDF

    1N4007G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4005G

    Abstract: 4006G 1N4001G 1N4007G 4002G 4001n
    Text: LITE-ON SEMICONDUCTOR 1N4001G thru 1N4007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes GLASS PASSIVATED RECTIFIERS DO-41 FEATURES Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability Plastic material has UL flammability classification 94V-0


    Original
    PDF 1N4001G 1N4007G DO-41 DO-41 300us 01-Dec-2000, KDDC01 4005G 4006G 1N4007G 4002G 4001n

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001G THRU 1N4007G List List. 1 Package outline. 2


    Original
    PDF 1N4001G 1N4007G MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs.

    4001GP

    Abstract: 4005GP 1N4005GP
    Text: 1N4001GP THRU 1N4007GP Glass Passivated Junction Rectifier DO-204AL DO-41 1.0 (25.4) MIN. * d e t Features n e t Pa Reverse Voltage 50 to 1000 V Forward Current 1.0 A • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction


    Original
    PDF 1N4001GP 1N4007GP DO-204AL DO-41) MIL-S-19500 50mVp-p 4001GP 4005GP 1N4005GP

    1n4007gp diode

    Abstract: 1N4001GP 1N4007GP 4001GP DO-204AL 4004GP
    Text: 1N4001GP THRU 1N4007GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts FEATURES D * DO-204AL N T E ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction


    Original
    PDF 1N4001GP 1N4007GP DO-204AL MIL-S-19500 50mVp-p 1n4007gp diode 1N4007GP 4001GP DO-204AL 4004GP

    003G

    Abstract: 1N4001G 1N4007G
    Text: 1N4001G thru 1N4007G General Purpose Plastic Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique


    Original
    PDF 1N4001G 1N4007G DO-41, MIL-STD-750, 50mVp-p 003G 1N4007G

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 1N4007G TECHNICAL DATA General Passivated Junction Rectifier FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0. High temperature metallurgically bonded construction. Cavity-free glass passivated junction.


    Original
    PDF 1N4007G MIL-S-19500.

    1N4001GP

    Abstract: No abstract text available
    Text: 1N4001GP thru 1N4007GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than


    Original
    PDF 1N4001GP 1N4007GP MIL-S-19500 2002/95/EC 2002/96/EC DO-204AL DO-41) 08-Apr-05

    1N4005GP

    Abstract: No abstract text available
    Text: 1N4001GP thru 1N4007GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A


    Original
    PDF 1N4001GP 1N4007GP MIL-S-19500 DO-204AL DO-41) 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-204AL, 1N4005GP

    Untitled

    Abstract: No abstract text available
    Text: 1N4001G thru 1N4007G 1.0 Amp. Glass Passivated Junction Rectifiers Voltage Range 50 to 1000 Volts Forward Current 1.0 Ampere Features ‹ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ‹ High temperature metallurgically bonded construction


    Original
    PDF 1N4001G 1N4007G MIL-S-19500 350oC/10 DO-204AL DO-41) MIL-STD-750, 125oC

    1N4007GP

    Abstract: 1N4005GP
    Text: MCC TM Micro Commercial Components 1N4001GP THRU 1N4007GP   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • 1 Amp Glass PassivatedRectifier 50 - 1000 Volts Glass Passivated Junction


    Original
    PDF 1N4001GP 1N4007GP DO-41 1N4007GP 1N4005GP

    1N4001GP...1N4007GP

    Abstract: 1N4007GP 1N4001GP-1N4007GP 1n4007gp diode 1N4001GP 4001GP
    Text: 1N4001GP - 1N4007GP Features • Low forward voltage drop. • High surge current capability. Dimensions in inches mm • High reliability. 0.205 (5.21) 0.160 (4.06) • High current capability. 1.0 min (25.4) DO-41 COLOR BAND DENOTES CATHODE 0.107 (2.72)


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    PDF 1N4001GP 1N4007GP DO-41 25oduct 1N4001GP...1N4007GP 1N4007GP 1N4001GP-1N4007GP 1n4007gp diode 4001GP

    1N4001G

    Abstract: 1N4007G 4002G 4005G 4006G
    Text: Glass Passivated Standard Rectifier 1N4001G THRU 1N4007G Current: 1A Votlage: 50 ~ 1000V Features DO-41 .034 .86 DIA. .028(.71) Low forward voltage drop High current capability Low reverse leakage current High Surge current capability 1.0(25.4) MIN. .205(5.2)


    Original
    PDF 1N4001G 1N4007G DO-41 MIL-STD-202 300uS 50mVp-p 1N4007G 4002G 4005G 4006G

    Untitled

    Abstract: No abstract text available
    Text: 1N4001G THRU 1N4007G 1.0 AMP GLASS PASSIVATED RECTIFIERS VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability DO-41 .107 2.7 .080(2.0) DIA. 1.0(25.4)


    Original
    PDF 1N4001G 1N4007G DO-41 MIL-STD-202,

    DO-41

    Abstract: No abstract text available
    Text: 1N4001GP THRU 1N4007GP SINTERED GLASS JUNCTION PLASTIC RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURE DO-41\DO-204AL High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of


    Original
    PDF 1N4001GP 1N4007GP DO-41\DO-204AL MIL-S-19500 /10sec/0 UL-94 DO-41

    1N40

    Abstract: diode 1N40 datasheet diode 1n40 DO204AL 1N4001G 1N4007G DO-204AL
    Text: 1.0A GENERAL PURPOSE SILICON RECTIFIER 1N4001G~1N4007G 1.0A General Purpose Silicon Rectifier Features • • • • • Glass passivated junction Low forward voltage drop Low leakage current High forward surge current capability High temperature soldering guaranteed 265°C/10 seconds


    Original
    PDF 1N4001G 1N4007G DO-204AL, MIL-STD-202E, 012Ounce, DO204AL DO-41) 1N40 diode 1N40 datasheet diode 1n40 DO204AL 1N4007G DO-204AL

    Untitled

    Abstract: No abstract text available
    Text: 1N4001GP-M3, 1N4002GP-M3, 1N4004GP-M3, 1N4005GP-M3, 1N4007GP-M3 www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated pallet chip junction


    Original
    PDF 1N4001GP-M3, 1N4002GP-M3, 1N4004GP-M3, 1N4005GP-M3, 1N4007GP-M3 DO-204AL DO-41) 22-B106 2002/95/EC. 2002/95/EC

    1N4007GP

    Abstract: 1N4001GP 1N4005GP
    Text: 1N4001GP thru 1N4007GP Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A IR 5.0 µA VF 1.1 V Tj max. 175 °C d* e t n Pate * Glass-plastic encapsulation technique is covered by


    Original
    PDF 1N4001GP 1N4007GP DO-204AL DO-41) MIL-S-19500 DO-204AL, UL-94V-tics 14-Sep-05 1N4007GP 1N4005GP

    Untitled

    Abstract: No abstract text available
    Text: 1N4001G - 1N4007G 1.0 AMP. Glass Passivated Rectifiers DO-41 Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant


    Original
    PDF 1N4001G 1N4007G DO-41

    1N4001G

    Abstract: 1N4007G 4002G 4005G 4006G
    Text: 1N4001G THRU 1N4007G Glass Passivated Standard Rectifier YENYO Voltage Range 50 to 1000 V Current 1.0 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case: Molded plastic DO-41


    Original
    PDF 1N4001G 1N4007G DO-41 MIL-STD-202 300uS 50mVp-p Jul-06 1N4007G 4002G 4005G 4006G

    1N4007GP

    Abstract: 1N4005GP DO-204AL JESD22-B102 J-STD-002 1N4001GP JESD 201 class 1A
    Text: 1N4001GP thru 1N4007GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, typical IR less than


    Original
    PDF 1N4001GP 1N4007GP MIL-S-19500 2002/95/EC 2002/96/EC DO-204AL DO-41) 1N4004GP-E3/54 1N4004GP-E3/73 1N4004GPHE3/73 1N4007GP 1N4005GP DO-204AL JESD22-B102 J-STD-002 JESD 201 class 1A

    Untitled

    Abstract: No abstract text available
    Text: FAGOB S7E » • OGGQbb? SSb « F Ü R S 1N4001GP. 1N4007GP FA.G0R ELECTRONICS 1 - 0 \ ' 1 3 I Arop. Glass PaasiŸâtôd Junction Rectifier Dimensions in mm. DO-41 Plastic V oltage 50 t o i . 000 V. Current 1.0 A. at 75°C. Mounting instructions


    OCR Scan
    PDF 1N4001GP. 1N4007GP DO-41 4001GP DO-201AD DO-27A DO-201AE DO-201

    Untitled

    Abstract: No abstract text available
    Text: TAIWAN LITON ELECTRONIC L I T E M : I 41E » S E M IC O N D U C T O R S • &&35h^B QQ04222 17T * T L I T 1N4001G thru 1N4007G -1 “ - 0 v - v 3 VO LTA G E RANGE 5 0 to 1000 Volts C U R R EN T 1.0 Ampere D O -4 1 FEATURES • Glass passivated chip • Low leakage


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    PDF QQ04222 1N4001G 1N4007G DO-15 0201AD

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTORS UTE»]¡IP 0WER 1N4001G thriI 1N4007G 1N4001GL 1N4007GL V O LTAG E RANGE 50 to 1000 Volts CURREN T 1.0 Ampere 1N 4000G L 1N 4000G D O -41 A -4 0 5 FEA TU RES • Glass passivated chip T • Low leakage • Low forward voltage drop •1Q7 2.7


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    PDF 1N4001G 1N4007G 1N4001GL 1N4007GL 4000G 4000G DO-15

    Untitled

    Abstract: No abstract text available
    Text: RATINGS AND CHARACTERISTIC CURVES 1N4001GP THRU 1N4007GP ' FIO. 2 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 1 — FORWARD CURRENT DERATING CURVE O tc Sto *J> 5» Qj fra: Oui U -fL i.o co 5 / 83 - 2 zU 0.2 Í CC À t 0.1 50 75 100 125 150 175 §


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    PDF 1N4001GP 1N4007GP 300Ms