1N415E
Abstract: mixer diode 1N415e diode DO-23
Text: 1N415E SILICON MIXER DIODE PACKAGE STYLE DO- 23 DESCRIPTION: The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS
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1N415E
1N415E
mixer diode
1N415e diode
DO-23
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Untitled
Abstract: No abstract text available
Text: 1N415E Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.5 Maximum Conversion Loss (dB)
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1N415E
Min335
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1N23 diode
Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
Text: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
CS101
1N23 diode
1N23C
1N23B
1N21C
1N23A
case cs101
1N415C diode
1N23WG
1N415H
CS100
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CS100
Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
Text: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
CS101
CS100
cs-100
1N415C
1N23 diode
1N23B
1N23
1N21E
1N416C
cs-101
1N21C
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ecg rectifier diode
Abstract: ECG 558 ECG diodes diode ecg 588 ECG555A 110MP
Text: Microwave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IMPED. 0 3 0 MHz (Ohms) VSWR Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060
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1N415C
1N415E
1N416C
1N416E
ECG553
ECG566A
ECG571
ECG616A
Z13-2
DO-92
ecg rectifier diode
ECG 558
ECG diodes
diode ecg 588
ECG555A
110MP
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CI 3060 elsys
Abstract: mav55 ECG592 1N416C microwave diode ecg 588 ci 3060 DIODE Z54 Z11A 1N415C diode Z6 DIODE
Text: M icrowave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IM PED. Q 30 MHz (Ohms) VSW R Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060
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1N415C
1N415E
1N416C
1N416E
ECG553
ECGG66A
ECG580
ECG615A
Z13-2
ECG615A
CI 3060 elsys
mav55
ECG592
1N416C microwave
diode ecg 588
ci 3060
DIODE Z54
Z11A
1N415C diode
Z6 DIODE
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617 varactor diode for radio tuning
Abstract: 393 DIODE 1N415C microwave
Text: SPECIAL DEVICES VARACTOR DIODES FOR RADIO TUNING Reveres Breakdown Volino« Volti Maximum Forward Currant (m *l Power Dissipation (mW) Minimum Figure of Merit PD 280 Q Ct Cr 200 100 @ 3 V 34 @ 3V 2.5 Min 50 280 150 @ 1V 440 @ 1V 15 NTE Type Number Diagram
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100mA
617 varactor diode for radio tuning
393 DIODE
1N415C microwave
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diode ECG125
Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
Text: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time
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bb53R2fi
ECG109
ECG110A
ECG110MP
ECG113A
ECG114
1N415C
1N415E
1N416C
1N416E
diode ECG125
CI 3060 elsys
ci 3060
ECG577
Z6 DIODE
DIODE GENERAL PURPOSE DET 200 PRV SCR
ECG117A
ECG576
ECG584 schottky
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1n415c
Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
Text: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
1N23F
1N23G
1N23WG
1N23H
CS101
1N415C
1n415c
1N23G
1N21C
1N21D
1N21E
1N21F
1N21G
1N21WE
1N416G
1N416C
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1N23C
Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:
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1N23C diode
Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure
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DO-22,
DO-23
DO-37
ardN21H
1N21HR
1N150
1N160
1N150R
1N160R
1N23C
1N23C diode
DIODE ku 1490
1N25 diode
1N26A diode
1N415C
1N4294
1N4603R
1N26BR
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JD 16
Abstract: ecg rectifier diode ECG605 1N415C diode 1N415C Z41A K596 595-AA 1N416E diode ecg 125
Text: PHILIPS E C INC G S4E » • IECG bfe5312fl 00D7E05 244 Diode and Rectifier Outlines cont'd 610 611 612 613 614 L . .3 6 0 " _ J9.I4) .t9? .200 (5 ) ( 5 .0 8 ) .18 < 4.6 ) DIA .IB S ( 4 TO ) n COMMON CATHOOC 7 .787 ■M «H ! L _ .4 2 5 "_J .110' k - f K
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0007E05
ECG605
ECG113A
ECG120
ECG582
ECG581
O-220
1N415C
1N415E
1N416C
JD 16
ecg rectifier diode
ECG605
1N415C diode
Z41A
K596
595-AA
1N416E
diode ecg 125
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Untitled
Abstract: No abstract text available
Text: SPECIAL DEVICES VARACTOR DIODES FOR RADIO TUNING M axim um Forw ard C urre nt m A Reverse B reakdow n Voltage (Volts) M inim um Figure of M erit P ow er D issipation (m W ) M inim um Diode C a pa cita nc e (pF) N TE Type Num ber D iagram Num ber A pplication
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Philips ECG125
Abstract: t75 hv diode ecg125 diode ECG125 ECG605 Z6 DIODE ECG558 ECG156 ECG584 schottky ECG1151
Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr
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Q00720S
ECG109
ECG110A
ECG110MP
ECG112
ECG113A
72OLARITY
OT-23
SP-92
ECG615A
Philips ECG125
t75 hv diode
ecg125 diode
ECG125
ECG605
Z6 DIODE
ECG558
ECG156
ECG584 schottky
ECG1151
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Z6 DIODE
Abstract: z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP
Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr
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ECG109
ECG110A
ECG110MP
ECG113A
ECG114
DO-27
ECG515
ECG551
ECG117A
ECG556
Z6 DIODE
z12 diode
Z4 diode
z11 diode
diode ECG125
ECG555
ECG584 schottky
ECG117A
ecg125 diode
ECG178MP
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in23c
Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
Text: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make
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DO-22,
DO-23
DO-37
26GHz.
1N26B
DO-37
1N26C
30MHz,
1000Hz
in23c
IN415C
IN23CR
in23we
1N23F
1N3747
IN26
1N21C
HP-432A
1n416
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1N23 diode
Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for
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1N3205
1N25XX,
1N78X,
DMA649X-XXX
1N23 diode
1N53AR
1N26A diode
Silicon Point Contact Mixer Diodes
1N415
1N832A
N178
kaba
1N23WG
1N26BR
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JAN1N23WG
Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
Text: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED
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1N23 diode
Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local
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1N21* Diode Detector Holder
Abstract: MA492C 1N23C diode MA41513 1N493C 1N23G Silicon Point Contact Mixer Diodes 1n415g jan-1n21we 1N23C
Text: Point Contact Mixer and Detector Diodes Features • PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT DETECTOR DIODES Description
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1N23 diode
Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure
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diac SBS 14
Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Text: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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BS9000,
D3007
HE4000B
80RIBUTION
BS9000
BPW22A
cm .02m z5u 1kv
pin configuration of BFW10
la4347
B2X84
TDA3653 equivalent
TRIAC TAG 9322
HEF40106BP equivalent
fx4054 core
dsq8
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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