1N4148 DO35
Abstract: 1N47A 1N52B 1N5 B 1N5 diode 55C 2v4 VISHAY MARKING BZG bzx55c v4148 SOD80
Text: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.
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1N4148
BZX55C.
BZX85C.
BZT03C220
BZW03C27
DO214AC
1N4148 DO35
1N47A
1N52B
1N5 B
1N5 diode
55C 2v4
VISHAY MARKING BZG
bzx55c
v4148
SOD80
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1N47A
Abstract: 1N52B
Text: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.
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1N4148
BZX55C.
BZX85C.
BZT03C220
BZW03C27
DO214AC
1N47A
1N52B
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ZENER 1N5
Abstract: ZENER 1N5 232 1N5 diode Analog devices TOP marking Information Fairchild Diode Marking Change ZENER 1N5 239 diode cross reference ZENER 1N5 230 zener diode cross reference Fairchild Cross Reference
Text: Absolute Maximum Ratings* Symbol PD Tolerance: B = 5% TA = 25°C unless otherwise noted Parameter Value Units 500 4.0 -65 to +200 mW mW/°C °C TSTG Power Dissipation Derate above 75°C Storage Temperature Range TJ Maximum Junction Operating Temperature + 200
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1N5226B
1N5257B)
1N5257B
DO-35
1N5257BTR
1N5257B
ZENER 1N5
ZENER 1N5 232
1N5 diode
Analog devices TOP marking Information
Fairchild Diode Marking Change
ZENER 1N5 239
diode cross reference
ZENER 1N5 230
zener diode cross reference
Fairchild Cross Reference
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DIODE BZG 03c
Abstract: DIODE BZX 85c marking code vishay label 1N4148 do214ac KZE sot23 Vishay diodes code marking 1N47A 1N5 diode 1N52B DIODE BZG
Text: Vishay Semiconductors Marking on Diodes V ÏÌÏ view from top Cathodering ÑÑ ÑÑÓ unwind ÌÌ ÌÌÏ Ï view from top Ó BZX ÑÑ Ó Cathodering V 414 8 BZX 55C 4V7 DO35 Type: 1N4148 ÏÌÏ view from top Cathodering Ó BAV ÑÑ ÑÑÓ unwind DO35 Type: BZX55C.
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1N4148
BZX55C.
BZX85C.
OT143
OT143R
OT323
OT343
OT343R
OT363
DIODE BZG 03c
DIODE BZX 85c
marking code vishay label
1N4148 do214ac
KZE sot23
Vishay diodes code marking
1N47A
1N5 diode
1N52B
DIODE BZG
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JST SOT-23
Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805
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STEVAL-ISS001V1
BAS16
100PPM
JST SOT-23
smd transistor l6
smd transistor 2y
R135 VARISTOR
103 resistor pack
diode zener c55
2Y DIODE SMD
DIODE SMD J9
transistor c114
diode zener c72
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ZENER 1N5
Abstract: 1N5 diode 1N5231C ZENER 1N5 230 1N5231C_Q
Text: Zener 1N5231C Zener 1N5231C Absolute Maximum Ratings* Symbol PD Tolerance = 2% TA = 25°C unless otherwise noted Parameter Value Units 500 4.0 -65 to +200 mW mW/°C °C TSTG Power Dissipation Derate above 75°C Storage Temperature Range TJ Maximum Junction Operating Temperature
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1N5231C)
1N5231C
1N5231C
1N5231CTR
ZENER 1N5
1N5 diode
ZENER 1N5 230
1N5231C_Q
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1N5 diode
Abstract: 1n5226b ZENER 1N5 1n5257b 1N5227B
Text: Absolute Maximum Ratings* Symbol PD Tolerance: B = 5% TA = 25°C unless otherwise noted Parameter Value Units 500 4.0 -65 to +200 mW mW/°C °C TSTG Power Dissipation Derate above 75°C Storage Temperature Range TJ Maximum Junction Operating Temperature + 200
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1N5226B
1N5257B)
1N5257B
1N5227BTR
DO-35
1N5227B
1N5 diode
ZENER 1N5
1n5257b
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5082-2804
Abstract: 5082-2805 1N5712 5082-2080 2800-Series 5082-2826 5082-XXXX 5082-2811 1N5711 RS-296-D
Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2835 5082-2835 General purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimised for
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340mV.
1N5711,
1N5712,
5082-xxxx
5082xxxx
1N5712
5082-28xx
T25/1N57xx
5082-2804
5082-2805
1N5712
5082-2080
2800-Series
5082-2826
5082-XXXX
5082-2811
1N5711
RS-296-D
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ZENER 1N5
Abstract: 1N5235B 1N5229B 1N5223B 1n5223 36V zener 1N5224B 1N5226B 1N5227B 1N5228B
Text: ADE-208-137 Z 1N5223B through 1N5258B Silicon Epitaxial Planar Zener Diodes for Voltage Regulation Preliminary Rev. 0 Aug. 1993 Features Outline • Glass package DO-35 structure ensures high reliability. • Wide spectrum from 2.7V through 36V of zener
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ADE-208-137
1N5223B
1N5258B
DO-35
1N5223B
DO-35
ZENER 1N5
1N5235B
1N5229B
1n5223
36V zener
1N5224B
1N5226B
1N5227B
1N5228B
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ZENER 1N5
Abstract: 1N52B 1N52 Hitachi DSA002711
Text: 1N5223B through 1N5258B Silicon Epitaxial Planar Zener Diodes for Voltage Regulation ADE-208-137 Z Preliminary, Rev. 0 Aug. 1993 Features • Glass package DO-35 structure ensures high reliability. • Wide spectrum from 2.7V through 36V of zener voltage provide flexible application.
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1N5223B
1N5258B
ADE-208-137
DO-35
1N5258B
DO-35
1N525
ZENER 1N5
1N52B
1N52
Hitachi DSA002711
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1N5712 spice
Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 and 1N5712 are passivated Schottky barrier diodes which use a patented
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1N5711
1N5711
1N5712
1N5711,
1N5712,
5082-xxxx
5082xxxx
1N5712 spice
1N5711 spice
5082-2804
2800-Series
5082-2811
RS-296-D
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1N5 diode
Abstract: 1N57xx 1N5712 1N5719 1N5767 RS-296-D 5082-XXXX
Text: Products > RF ICs/Discretes > PIN Diodes > Axial Glass Packaged > 5082-3080 5082-3080 axial lead glass packaged PIN diodes Description Lifecycle status: Active Features The 5082-3xxx series of current controlled PIN diodes are specified for use in control
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5082-3xxx
1N5719,
1N5767,
5082-xxxx
5082xxxx
1N5712
T25/1N57xx
1N57xx
1N5 diode
1N5712
1N5719
1N5767
RS-296-D
5082-XXXX
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1N5200
Abstract: 1N5226B
Text: Absolute Maximum Ratings* Symbol PD Tolerance: B = 5% TA = 25°C unless otherwise noted Parameter Value Units 500 4.0 -65 to +200 mW mW/°C °C TSTG Power Dissipation Derate above 75°C Storage Temperature Range TJ Maximum Junction Operating Temperature + 200
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DO-35
1N5228B
1N5228BTR
/PDF/1N5228B
26-Jul-2002
1N5200
1N5226B
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diode 5082-3077
Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Text: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications
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1N5719,
1N5767,
IN5719
5082-xxxx
5082-xxxx
1N5712
5967-5812E
5968-7182E
diode 5082-3077
IN5719
1N5767
5082-3039
diode 5082-3080
1N5 diode
1N5719
F 5082
1N5712
RS-296-D
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1N5712
Abstract: 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice
Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2800 5082-2800 High breakdown general purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-28xx family are passivated Schottky barrier diodes which use a patented guard-ring
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5082-28xx
1N5711,
1N5712,
5082-xxxx
5082xxxx
1N5712
T25/1N57xx
1N5712
5082-2800
5082-2826
RS-296-D
1N5711
5082-2080
5082-2805
1N5712 spice
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IN5834
Abstract: IN5833 IN5832 N5834 1N5 diode 1N5832 1N5833
Text: IN5832 1N5833 IN5834 I HOT CARRIER POWER RECTIFIER I , employing the Schottky Barrier principle in a large area metal-to-silicon power diode, State of the art’geometrv features epitaxial construction with oxide passivation and metal overlap contact. Ideallv suited for use as rectifiers in low-voltage,
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IN5832
1N5833
IN5834
IN5834
IN5833
IN5832
N5834
1N5 diode
1N5832
1N5833
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1N5767
Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers,
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5989-3339EN
1N5767
DIODE T25
in5719
1nxxxx diode
1N5712
1N5719
RS-296-D
digital phase shifters
1N5 diode
5082-XXXX
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1N5421-1N5425
Abstract: 1N5718 1N5421 1N5425 tt5200 IN5421 IN5425 IN5717 1N5717 1N5715
Text: TELEDVNE COMPONENTS SÖE D flilT b Q S 1N5/14 1N5715 4N5716 1N5717 1N5718 HIGH-Q-HIGH VOLTAGE-HIGH CAPACITANCE SILICON EPITAXIAL VARACTRON VOLTAGE-VARIABLE CAPACITANCE DIODES Electrically Equivalent to 1N5421-1N5425 GEOMETRY 417 or 419, GEOMETRY 419 or 423, GEOMETRY 423 or 418
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1N5714
1N5715
4N5716
1N5717
1N5718
1N5421-1N5425
1N5716
1N5718
1N5421
1N5425
tt5200
IN5421
IN5425
IN5717
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IN5 diode
Abstract: DIODE IN5 IN5182 B2B diode QQGQ331 Edal
Text: EDAL IN D U S T R I E S INC 4SE D 30=157]^ 00 00 33 1 b£b • EDL 7 -0 -0 e .0 i B. v P I Y _ 5 , 0 0 0 Volts I _ AMPS 4.0 S - _V @ _ 100 ma ■10 Ip 25 @ 0 0 ma @ _ 5ua @ 5000 V & 25 @ 25 o, o, @ ' STYLE STAMP 1N5 182 EXCEPT
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3QTS71b
QQGQ331
IN5 diode
DIODE IN5
IN5182
B2B diode
Edal
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1n53838
Abstract: BZV48C ZENER 1N4 BZY97-C2V7 ZENER 1N5 BZX61 Z500-1 BZV40C ZX85C Z500-21
Text: ZENER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1/4 M 2 .4 A Z 10 1/4 M 2 .7 A Z 10 1/4 M 3 .0 A Z 10 1/4 M 3 .3 A Z 10 1/4 M 3 .6 A Z 10 1/4 M 3 .6 A Z 10 1/4 M 3 .9 A Z 10 1/4 M4 .3 A Z 10 1/4 M4 .7 A Z 10 1/4 M 5.1 A Z 10 1/4 M5 .6 A Z 10 1/4 M6 .2 A Z 10
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5270B
4187B
4193B
5226B
BZV55C
5257B
ZX85C
ZP4100
ZP4120
1n53838
BZV48C
ZENER 1N4
BZY97-C2V7
ZENER 1N5
BZX61
Z500-1
BZV40C
Z500-21
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IN5552
Abstract: lN555 N5550 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 1N5557
Text: PIV lo 25°C Volts Amps VF IR Volts /iA 1.0 1.0 1.0 1.0 1.0 1.0 Type No. 1N 5550 1N 5551 1N 5552 1N 5553 1N 5554 Zener Type Ho. IN 5 5 5 5 1N 5556 1N 5557 1N 5558 1N 5559 IN 5 5 6 0 1N 5561 1N 5562 1N 5563 1N 5564 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0
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1N5550
1N5551
IN5552
1N5553
1N5554
1N5555
1N5556
1N5557'
1N5558
DO-13
lN555
N5550
1N5557
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IN5653A
Abstract: diode 1n5658 N5664A IN563 IN5653 2B2 zener diode 1N5G62 in5657a 1N5631 in5645a
Text: 1N5629 thru Micro/semi Corp. The diode experts SANTA ANA. CA 1N5665 SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 6 0 2 94 1-6 3 0 0 FEATURES TRANSIENT ABSORPTION ZENER • PROTECTS CIRCUITS FROM HARMFUL TRA N SIEN TS • ABSO RBS I M S TRA N SIEN TS UP TO 1500 WATTS
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1N5629
1N5665
DO-13
MIL-S-19500/500
IN5653A
diode 1n5658
N5664A
IN563
IN5653
2B2 zener diode
1N5G62
in5657a
1N5631
in5645a
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Untitled
Abstract: No abstract text available
Text: GMD UHF/VHF AB RUPT TUNING DIODES SUPER Q electronics m e . . . . w ith capacitance tuning ratios usable over most of their operating bias voltage range - and readily matched in groups, the diodes featured here are most suitable fo r many RF tuning applications including electronic
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1N5681A-1N5695A
1N5702A
N5688A
1N5703A
1N5689A
1N5704A
1N5690A
1N5705A
1N5691A
1N5706A
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1N56
Abstract: 5687A 5686a
Text: E ÌE 3 1 su pero * electponlca «c “S K ? SERIES 1N5S81A 1N S 6 M A 1N 5 6 W A 1NS710A . . . . w ith capacitance tu n in g ra tio s usable over m ost o f th e ir o p e ra tin g bias voltage range - and rea d ily m atched in groups, the diodes featured here
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1N5S81A
1NS710A
1N5681A
1N5701
C2/C40
1N56
5687A
5686a
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