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    1N5819 SOD-323

    Abstract: No abstract text available
    Text: APPROVE SHEET Customer: Customer Part Number: 1N5817~1N5819 PanJit Part Number: 1N5817~1N5819 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129


    Original     		PDF 1N5817 1N5819 1N5819 SOD-323

    1N5822 SMD

    Abstract: 1n5819 smd MBRF26 1n5817 SOD-123 MELF GLASS Schottky Blue SB360 smd 1N5817 smd 1N5819 SOD-123 DO-213AB GLASS Schottky Blue smd package 1N5819
    Text: SCHOTTKY RECTIFIERS Package IF AV V(BR) Range Max VF @ lF Device(1) Family(3) Type (V) (V) (A) MBR0520L+ MBR0530 MBR0540 SB020 - SB060 1N5817 - 1N5819 1N5817G - 1N5819G 1N5817M - 1N5819M BYM13-xx SB120 - SB160 SB1H90 - SB1H100+ SGL41-xx SL03+ SL04+ SS12 - SS16


    Original     		PDF MBR0520L+ MBR0530 MBR0540 SB020 SB060 1N5817 1N5819 1N5817G 1N5819G 1N5817M 1N5822 SMD 1n5819 smd MBRF26 1n5817 SOD-123 MELF GLASS Schottky Blue SB360 smd 1N5817 smd 1N5819 SOD-123 DO-213AB GLASS Schottky Blue smd package 1N5819

    6a3 zener

    Abstract: DB240B 1N4004 DO-214 w06 sot-23 1N4001 DO-214 1N4004 1N4007 MINIMELF DO214 SRF2020-SRF w06 sot23 1n4007 DO-214 1N5819 SOD-323
    Text: JINAN JINGHENG CO., LTD. MAIN PRODUCT CONTENT 1. SCHOTTKY BARRIER RECTIFIERS Type Number Forward Current Amps Reverse Voltage Range(Volts) Case SR0620-SR06A0 0.6 20-100 DO-41 1N17-1N19 1 20-40 R-1 1N5817-1N5819 1 20-40 DO-41 1S20-1S200 1 20-200 R-1 SR120-SR1200


    Original     		PDF SR0620-SR06A0 DO-41 1N17-1N19 1N5817-1N5819 1S20-1S200 SR120-SR1200 SM120-SM1A0 DO-213AA) 6a3 zener DB240B 1N4004 DO-214 w06 sot-23 1N4001 DO-214 1N4004 1N4007 MINIMELF DO214 SRF2020-SRF w06 sot23 1n4007 DO-214 1N5819 SOD-323

    LQN6C101M04

    Abstract: 1N5817 onsemi 1N5817 ferrite core EA onsemi 035 Schottky diode 35V
    Text: SP6639/40/53 5V/ 3.3V/ 3V Adjustable, High Efficiency, Low IQ, Step-Down DC-DC Converter FEATURES • High, 94% Efficiency ■ 100mA Output Current ■ 10µA Quiescent Current ■ Low Current Shutdown Mode ■ Low Battery Detector ■ Preset 5.0V, 3.3V, 3.0V or Adjustable


    Original     		PDF SP6639/40/53 100mA SP6639 SP6640 SP6653 SP6639/40/53 2001Sipex LQN6C101M04 1N5817 onsemi 1N5817 ferrite core EA onsemi 035 Schottky diode 35V

    1N5819 SOD-123

    Abstract: smd package 1N5819 1n5817 SOD-123 sod87 package 1N5819 smd diode SOD 87 Package 1N5819 SOD123 1N5818 smd 1n5819 smd 1N5819 SMA
    Text: New Product Announcement April 2001 Compact, High-efficiency SOD-123: 1N5819HW! Uses 35-40% Less Board Space Than Other 1 Amp SMD’s E D SOD-123 A B G H C J Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D  1.35 E 0.55 Typical G 0.25  H 0.15 Typical


    Original     		PDF OD-123: 1N5819HW! OD-123 OD-123 400mV 1N5819HW OD-87 PRLL58xx) 1N5819 SOD-123 smd package 1N5819 1n5817 SOD-123 sod87 package 1N5819 smd diode SOD 87 Package 1N5819 SOD123 1N5818 smd 1n5819 smd 1N5819 SMA

    221A-06

    Abstract: 1N5822 SMc 221B-03 case 59-04
    Text: ON Semiconductor Schottky Rectifiers Schottky Rectifiers Surface Mount Schottky Rectifier Packages 1 Mfr.Õs Type VRRM V IO1 (A) IO Rating Condition Max. VF @ IF TC=25¡C (V) IFSM (A) TJ Max. (¡C) Max IR2 TJ=25¡C (mA) Max IR3 (mA) Package Style MBR0520LT15


    Original     		PDF MBR0520LT1 OD-123 MBRS140T3 MBRS340T3 MBRS360T3 MBRD640CT MBRD660CT MBRD835L O-218 O-247 221A-06 1N5822 SMc 221B-03 case 59-04

    common anode schottky to220

    Abstract: 1N5822 SS34 Schottky diode TO220 SS14 DIODE schottky Common Anode Schottky Rectifier SS24 DIODE schottky SS14 SOD123 diode sb340 FYPF2004DN 247 DIODE schottky
    Text: Discrete Schottky Products VRRM IF AV VFM IRM Maximum Average Maximum Maximum Instantaneous IFSM (A) Repetitive Rectified Instantaneous Reverse Current Reverse Forward Forward ROJA (Cel/W) Voltage (V) Current (A) Voltage (V) @VR (V) (uA) Termal Resistance


    Original     		PDF 1N5820 1N5821 1N5822 SB3100 SB330 SB340 MBR4035PT MBR4045PT MBR4050PT MBR4060PT common anode schottky to220 1N5822 SS34 Schottky diode TO220 SS14 DIODE schottky Common Anode Schottky Rectifier SS24 DIODE schottky SS14 SOD123 diode sb340 FYPF2004DN 247 DIODE schottky

    1N4007 melf

    Abstract: p6ke80 zener 400v P6KE45 pb68 sot23 schottky 400v P6KE64 SS14 SOD123 1N5822 MELF 1N4007 minimelf
    Text: MCC CASE STYLE REFERENCE GUIDE PRODUCT GROUPS ARE SORTED BY CURRENT RATING Please note that this guide does not include the entire MCC product offering. It only includes those part numbers that are offered in a variety of packages. In some cases, the different packages could result in slightly different electrical characteristics of the


    Original     		PDF DO-35 1N4154 1N4151 1N4454 1N4148 1N914 1N4448 DL4151 DL4154 DL4454 1N4007 melf p6ke80 zener 400v P6KE45 pb68 sot23 schottky 400v P6KE64 SS14 SOD123 1N5822 MELF 1N4007 minimelf

    MBR5045PT

    Abstract: MBR5020PT SS14 SOD123 MBR1535 MBR5035PT MBR2
    Text: MCC SCHOTTKY BARRIER RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE: -55°C TO 125°C Average Forward Maximum Working Forward Peak Current @ HalfReverse Current Peak Surge Current Wave @ VRWM Reverse @ 8.3mS MCC Resistive Load Voltage Superimposed @ 25°C TL*


    Original     		PDF M5819 1N5817 1N5818 1N5819 SR106 SR108 SR1010 SR202 SR203 SR204 MBR5045PT MBR5020PT SS14 SOD123 MBR1535 MBR5035PT MBR2

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    mr852

    Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
    Text: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120LT3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mr852 DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534

    MUR420 diode

    Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
    Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal


    Original     		PDF MBRM140T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR420 diode MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference

    diode A14A surface mount

    Abstract: SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode
    Text: MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling


    Original     		PDF MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD640CT MBRD660CT VHE205 VHE210 diode A14A surface mount SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    diode sy 164 dl

    Abstract: diode sy 164 02N2222 b6045
    Text: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchm ode Power Rectifiers MBR6045 Is a Motorola Preferred Device . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.


    OCR Scan     		PDF MBR6035 MBR6045 MBR6045 diode sy 164 dl diode sy 164 02N2222 b6045