1N5822 PACKAGE Search Results

1N5822 PACKAGE Result Highlights (5)

Part	Manufacturer	Description
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)
TPH2R408QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance

1N5822 PACKAGE Price and Stock

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Microchip Technology Inc 1N5822
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
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1N5822 PACKAGE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DO-201AD Abstract: No abstract text available Text: Formosa MS Axial Leaded Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2	Original	1N5820 1N5822 MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs. DO-201AD	PDF
Untitled Abstract: No abstract text available Text: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2	Original	1N5820 1N5822 22-A102 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs.	PDF
1N5820 Abstract: 1N5821 1N5822 diode schottky 1N5822 Text: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2	Original	1N5820 1N5822 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. 1N5821 1N5822 diode schottky 1N5822	PDF
Untitled Abstract: No abstract text available Text: Formosa MS Schottky Barrier Rectifier 1N5820 THRU 1N5822 List List. 1 Package outline. 2	Original	1N5820 1N5822 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 METHOD-1021	PDF
DIODE 1N5822 Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D DIODE 1N5822 1N5820RL 1N5821 1N5821RL 1N5822RL	PDF
1N5821 Abstract: No abstract text available Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 Surfa5820 1N5821 1N5821	PDF
half bridge LLC inverter Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822 Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D half bridge LLC inverter diode 1n5822g 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL	PDF
1N5822RL Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D 1N5822RL 1N5820RL 1N5821 1N5821RL	PDF
Untitled Abstract: No abstract text available Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 SurfaN5820 1N5821 1N5821	PDF
1N5822 Abstract: DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820 1N5820RL Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820RL	PDF
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier	PDF
1N5822 PACKAGE Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822 Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5822 PACKAGE 1N5821 half wave rectifier LLC 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL	PDF
1N5820 Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28 Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G DIODE T28	PDF
Untitled Abstract: No abstract text available Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D	PDF

1N5820 Abstract: 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 1N5820RL 1N5821 1N5821RL 1N5822RL	PDF
1N5822 Abstract: No abstract text available Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation	Original	1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D	PDF
1N5822 Abstract: T4-LDS-0303 mil-prf-19500/1N5822 MELF Text: 1N5820 – 1N5822 and 1N6864 Available on commercial versions 3 Amp Axial Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/620 Qualified Levels*: JAN, JANTX, JANTXV and JANS DESCRIPTION This series of 3 amp Schottky rectifiers in their axial-leaded “B” packaging offer flexible thruhole mounting. The 1N5822 and 1N6864 are military qualified for high-reliability applications.	Original	1N5820 1N5822 1N6864 MIL-PRF-19500/620 1N6864 MIL-PRF-19500/620 T4-LDS-0303 mil-prf-19500/1N5822 MELF	PDF
L75C Abstract: No abstract text available Text: 1N5820THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3 . 0 Amperes _ FEATURES_ ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction, majority carrier conduction	OCR Scan	1N5820THRU 1N5822 DP-201 90i4B L75C	PDF
1N5820 Abstract: 1N5821 1N5822 Text: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Ampere FEATURES DO-201AD Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction,majority carrier conduction	Original	1N5820 1N5822 DO-201AD 1N5821 1N5822	PDF
1N5820 Abstract: 1N5821 1N5822 Text: CE 1N5820 THRU 1N5822 CHENYI ELECTRONICS SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0Ampere FEATURES . Plastic package has Underwriters Laboratory Flammability Classification 94V-0 . Metal sliicon junction ,majority carriet conduction	Original	1N5820 1N5822 DO-201AD 1N5821 1N5822	PDF
1N5820 Abstract: 1N5821 1N5822 Text: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes DO-201AD FEATURES 1.0 25.4 MIN. * Compliance to RoHS product * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0	Original	1N5820 1N5822 DO-201AD 260oC 1N5820 1N5821 1N5821 1N5822	PDF
1N5820 Abstract: 1N5821 1N5822 Text: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes DO-201AD FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction	Original	1N5820 1N5822 DO-201AD 50mVp-p 1N5821 1N5822	PDF
1N5820 Abstract: No abstract text available Text: 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Amperes FEATURES DO-201AD ◆Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆Metal silicon junction,majority carrier conduction	Original	1N5820 1N5822 DO-201AD DO-201AD	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. 1N5820 thru 1N5822 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory * * * * Reverse Voltage 20 to 40V Forward Current 3.0A Flammability Classification 94V-0 Low power loss,high efficiency	Original	1N5820 1N5822 DO-201AD, MIL-STD-750, DO-41 DO-15 DO-201AD 26/tape DO-201ADç DO-201AD	PDF

1N5822 PACKAGE Search Results

1N5822 PACKAGE Result Highlights (5)

1N5822 PACKAGE Price and Stock

Microchip Technology Inc 1N5822

1N5822 PACKAGE Datasheets Context Search

DO-201AD

Untitled

1N5820

Untitled

DIODE 1N5822

1N5821

half bridge LLC inverter

1N5822RL

Untitled

1N5822

5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

1N5822 PACKAGE

1N5820

Untitled

1N5820

1N5822

1N5822

L75C

1N5820

1N5820

1N5820

1N5820

1N5820

Untitled