1n645
Abstract: 1N647-1 1N645-1 DO7 1n647 pk1n 1N645 DO7
Text: RECTIFIERS 1N645, 1N647; JAN, JAN TX 1N645, 1N647 JAN, JA N TX & JAN TXV 1N645-1, 1N647-1 High Voltage, Low Current FEATURES DESCRIPTION • • • • These devices are useful in general purpose low current applications in high reliability and m ilitary equipment.
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1N645,
1N647;
1N647
1N645-1,
1N647-1
MIL-S-19500/240
DO-35
1N645
1N647-1
1N645-1 DO7
pk1n
1N645 DO7
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1n647
Abstract: 1N647-1
Text: M IC R OS EN I CORP/ ÜIATERTOIÜN SÜE R F O T IF IF R Ç I .“ *" High Voltage, Low Current D m 00123S5 =1133 • U N I T 1N645, 1N647; JAN, JANTX 1N645, 1N647 JAN, JANTX & JANTXV 1N645-1, 1N647-1 . FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/240
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00123S5
1N645,
1N647;
1N647
1N645-1,
1N647-1
MIL-S-19500/240
DO-35
1N645-1
1n647
1N647-1
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1N645
Abstract: 1N845 IN645 MIL-S-19500/240 1N645-1 1N645-1 JAN JANTX 1N645
Text: RECTIFIERS JAN, JANTX 1N645 JAN, JANTX & JANTXV 1N645-1 High Voltage, Low Current FEATURES DESCRIPTION • • • • • These devices are useful in general purpose low current applications in high reliability and military equipment. Metallurgical Bond Qualified to MIL-S-19500/240
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1N645
1N645-1
MIL-S-19500/240
DO-35
1N845
IN645
MIL-S-19500/240
1N645-1
1N645-1 JAN
JANTX 1N645
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1N645
Abstract: 1N645A 1N649 1N647 1N646 1N648 1N645 DO7
Text: 1N645 THRU 1N649 1N645A Central semiconductor Corp. SILICON GENERAL PURPOSE DIODES 1 4 5 Adam s Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC DO-7 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N645 series types are Silicon Diodes designed for general purpose medium current applications.
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1N645
1N649
1N645A
1N646
1N647
1N648
1N645 DO7
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IN5551
Abstract: 1N4148 75v 150mA diode in483a zener 400v in4148 zener diode Zener Diode 1.5W DO35 100v 500ma diode Switching diode 80V 200mA zener diode 50w zener in4148
Text: PART NUMBER INDEX MICROSEMI CORP/ WATERTOWN SDE T> WM 13M7^b3 DESCRIPTION PART NUMBER 1N645J, JTX 1N645-1J, JTX, JTXV 1N647, J, JTX 1N647-1, J, JTX, JTXV 400mA; 400mA; 400mA; 400mA; 270V 270V 480V 480V J, J, J, J, JTX JTX, JTXV JTX, JTXV JTX, JTXV 1N4883-1N4884
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1N251,
1N456
1N456A
1N457,
1N457A
1N458,
1N458A
1N459,
1N459A
IN483A
IN5551
1N4148 75v 150mA diode
zener 400v
in4148 zener diode
Zener Diode 1.5W DO35
100v 500ma diode
Switching diode 80V 200mA
zener diode 50w
zener in4148
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diode 1N645
Abstract: 1N34 DIODE 1N270 diode 1N34 diodes germanium diode 1N60 1N34
Text: 3 6 6 ,7 2 0 GENER.L DIODE CORP 3 8 tT O D D00 0 3 t a fl f - <^£micorzclucéoi± _ T e le x 948318 100 Eqmes Street (617 872-7520 Framingham, Massachusetts 01701 Low Current Diodes (DO-7) V RM (r e p ) V o lta V o lt ' GDC645 150 1N645 Type No. I0
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GDC645
1N645
1IT646
1N647
1N270*
GDC270
1H273
GDC273
diode 1N645
1N34 DIODE
1N270 diode
1N34 diodes
germanium diode 1N60
1N34
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Untitled
Abstract: No abstract text available
Text: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) ("A) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200
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DO-35
1N457A
1N459A
1N485B
1N3595
CDH300
CDH333
1N645
1N647
1N649
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Untitled
Abstract: No abstract text available
Text: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. Vrrm l£> Vf @ If IR @ VR Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200
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DO-35
1N457A
1N459A
1N485B
1N3595
CDH300
CDH333
1N645
1N647
1N649
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Untitled
Abstract: No abstract text available
Text: Silicon Diodes DO-35 Case £3 Low Leakage Diodes lo Vf @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200 1.0
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DO-35
1N457A
1N459A
1N485B
1N3595
CDH300
CDH333
1N645
1N647
1N649
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1n35
Abstract: No abstract text available
Text: Silicon D iodes DO-35 Case Low Leakage Diodes TYPE NO. •o VF @ IF IR V r Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200
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DO-35
1N457A
1N459A
1N485B
1N3595
CDH300
CDH333
1N645
1N647
1N649
1n35
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1N4858
Abstract: Schottky Diodes do-35 1N3595 1N457A 1N459A 1N485B 1N6263 1N645 1N647 1N649
Text: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200
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DO-35
1N457A
1N459A
1N485B
1N3595
cdh300
cdh333
1N645
1N647
1N649
1N4858
Schottky Diodes do-35
1N6263
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Untitled
Abstract: No abstract text available
Text: B K C INTERNATIONAL Peak Inverse Voltage MIN. P IV Breakdown Voltage (MIN.) Bv @ lOOpA BO E D • Average Rectified Current Average Rectified Current lo 25« C 160 C HTTiûB *0 QQ00303 3 ■ (-0\-0°| Surge Current (MAX.) Ip (surge) (NOTE 1) Junction Capacitance
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QQ00303
1N645-1
1N647-1
1N649-1
400mAdc
1N645
DO-34
DO-35
DO-41
LL-41
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IN3599
Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Text: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5
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1N194A
1N195
1K200
1N201
JN202
IN4829
1N4J30
MP035Ã
MPD302
MPB401
IN3599
1N9168
1N4242
IN485
IN625
1N20S
1N4389
1N4243
in648
IN458a
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IN3599
Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
Text: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0
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DD0DB05
IN3599
IN433A
IN625
1N3068
1N218
1N4147
IN648
1N3069
1N3067
IN485
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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