1n645
Abstract: 1N647-1 1N645-1 DO7 1n647 pk1n 1N645 DO7
Text: RECTIFIERS 1N645, 1N647; JAN, JAN TX 1N645, 1N647 JAN, JA N TX & JAN TXV 1N645-1, 1N647-1 High Voltage, Low Current FEATURES DESCRIPTION • • • • These devices are useful in general purpose low current applications in high reliability and m ilitary equipment.
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1N645,
1N647;
1N647
1N645-1,
1N647-1
MIL-S-19500/240
DO-35
1N645
1N647-1
1N645-1 DO7
pk1n
1N645 DO7
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1n647
Abstract: 1N647-1
Text: M IC R OS EN I CORP/ ÜIATERTOIÜN SÜE R F O T IF IF R Ç I .“ *" High Voltage, Low Current D m 00123S5 =1133 • U N I T 1N645, 1N647; JAN, JANTX 1N645, 1N647 JAN, JANTX & JANTXV 1N645-1, 1N647-1 . FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/240
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00123S5
1N645,
1N647;
1N647
1N645-1,
1N647-1
MIL-S-19500/240
DO-35
1N645-1
1n647
1N647-1
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Untitled
Abstract: No abstract text available
Text: FEATURES 1N645- 1 • • • • • 1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:
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1N645-
1N645-1
MIL-PRF-19500/240
500mW
400mA,
150mA,
MILPRF-19500/240
DO-35
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1N645-1
Abstract: 1N645-1 JAN 1N645-1 JANTX
Text: FEATURES 1N645-1 • • • • • 1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:
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1N645-1
1N645-1
MIL-PRF-19500/240
500mW
400mA,
150mA,
MILPRF-19500/240
DO-35
1N645-1 JAN
1N645-1 JANTX
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DIODE 1N649
Abstract: diode 1N645 JANTX markings on diode marking 332 1N649 JANTX 1N647 military part marking symbols jan 1N647-1 JANTX 1N647-1 1N645-1 JANS
Text: MIL SPECS I C | 0 D D 0 1 2 S 0001574 4 | T-of-cy \ NOTICE I IOF VALIDATION ! INCH-POUND MIL-S-19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1
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MIL-S-19500/240E
1N645,
1N647,
1N649,
1N645-1,
1N647-1
1N649-1,
MIL-S-19500/240E,
1N647-1,
DIODE 1N649
diode 1N645
JANTX markings on diode
marking 332
1N649 JANTX
1N647
military part marking symbols jan
JANTX 1N647-1
1N645-1 JANS
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DO-35 silicon Rectifier diodes
Abstract: 1N649-1 1N647 1N648 1N649 DO-213AA 1N645 1N645-1 1N646 Purpose Rectifier Melf
Text: Silicon Rectifier Diodes Use Advantages DO-35 Glass Package 1N645 to 649 or 1N645-1 to 649-1 Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not
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DO-35
1N645
1N645-1
1N645-1
1N649-1
DO-35 silicon Rectifier diodes
1N649-1
1N647
1N648
1N649
DO-213AA
1N646
Purpose Rectifier Melf
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1N649-1
Abstract: No abstract text available
Text: POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N645 THRU 1N649 JAN AND JANTX 1N645-1 THRU 1N649-1 MINIATURE GLASS PASSIVATED SILICON DIODES VOLTAGE- 225 to 600 Volts .023 0.6 010. .0 1 8 (.0 5 ) CURRENT - 400 Milliamperes T FEATURES 1.50(38.1) 1.00(25.4) ♦ Qualified to MIL-S-19500/ 240E
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1N645
1N649
1N645-1
1N649-1
MIL-S-19500/
MIL-STD-202,
JANTX1N645
1N649
1N649-1
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1N645
Abstract: 1N845 IN645 MIL-S-19500/240 1N645-1 1N645-1 JAN JANTX 1N645
Text: RECTIFIERS JAN, JANTX 1N645 JAN, JANTX & JANTXV 1N645-1 High Voltage, Low Current FEATURES DESCRIPTION • • • • • These devices are useful in general purpose low current applications in high reliability and military equipment. Metallurgical Bond Qualified to MIL-S-19500/240
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1N645
1N645-1
MIL-S-19500/240
DO-35
1N845
IN645
MIL-S-19500/240
1N645-1
1N645-1 JAN
JANTX 1N645
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1N649
Abstract: 1N645 1N645-1 1N646 1N647 1N648 1N649-1 DO-213AA
Text: Silicon Rectifier Diodes Use Advantages DO-35 Glass Package 1N645 to 649 or 1N645-1 to 649-1 Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not
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DO-35
1N645
1N645-1
1N645-1
1N649-1
1N649
1N646
1N647
1N648
1N649-1
DO-213AA
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1N649-1
Abstract: 1N645-1 1N647-1 1N645-1 JAN N647
Text: 1N645-1 thru 1N649-1 ITTIH ÎM Microsemi Corp. FEATURES • • • • • • • MILITARY RECTIFIERS Microm iniature package. Voidless herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. Standard recovery. PIV to 6 0 0 volts.
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1N645-1
1N649-1
MIL-S-19500/240D.
1N649-1
400mAdc
1N645-1
N647-1
150mAdc,
1N647-1
1N645-1 JAN
N647
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Untitled
Abstract: No abstract text available
Text: 1N645-1+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25
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1N645-1
Current400m
Voltage225
Current50n
Current25u
StyleDO-35
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N645-1+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25
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1N645-1
Current400m
Voltage225
Current50n
Current25u
StyleDO-35
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N645-1+JANS Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25
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1N645-1
Current400m
Voltage225
Current50n
Current25u
StyleDO-35
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon Rectifier Diodes E 1N645-1 thru 1N649-1 Use Advantages DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.
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1N645-1
1N649-1
DO-35
0Q0057L>
1N645-1
1N645-649
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IN645
Abstract: 1N645-1 1N645-1 JAN
Text: 1N645-1 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25°C 150 mA @ 150°C
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1N645-1
MIL-PRF-19500/240
400mA
IN645-1
IN645
1N645-1
1N645-1 JAN
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N645-1+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25
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1N645-1
Current400m
Voltage225
Current50n
Current25u
StyleDO-35
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PDF
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IN645
Abstract: 1N645-1 1N645-1 JAN JANTX 1N645-1
Text: 1N645-1 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25°C 150 mA @ 150°C
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1N645-1
MIL-PRF-19500/240
400mA
IN645-1
IN645
1N645-1
1N645-1 JAN
JANTX 1N645-1
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PDF
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Untitled
Abstract: No abstract text available
Text: LL645-1 thru LL649-1 Silicon Rectifier Diodes Use Advantages E DO-213AA MELF SMD 1N645 1 647 / 649UR-1 MIL types Used as a small footprint surface mount general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not
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LL645-1
LL649-1
DO-213AA
1N645
649UR-1
LL-34/35
DO-213AA)
150mAdc,
1N645/47/49UR-1
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L6491
Abstract: T-75 A HIGH VOLTAGE DIODES l646 L645 L6471 BKC Semiconductors 1n645 "T-75 A" HIGH VOLTAGE DIODES l649
Text: Silicon Rectifier Diodes Use Advantaqes I LL645-1 thru LL649-1 DO-213AA MELF SMD V's 1N645 / 647 / 649UR-1 MIL types Used as a small footprint surface mount general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not
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LL645-1
LL649-1
DO-213AA
1N645
649UR-1
LL-34/35
-213A
L649-1
150mAdc,
L6491
T-75 A HIGH VOLTAGE DIODES
l646
L645
L6471
BKC Semiconductors
"T-75 A" HIGH VOLTAGE DIODES
l649
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PDF
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Untitled
Abstract: No abstract text available
Text: Microsemi Corp. II y The dioi1e experts / SANTA A N A , CA F o r m o re in fo rm a tio n call: 714 979-8220 J A N 1N645-1 thru J A N 1N649-1 ☆JA N S* 7 MILITARY RECTIFIERS FE A T U R E S • MICROMINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE
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1N645-1
1N649-1
MIL-S-19500/240
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PDF
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Untitled
Abstract: No abstract text available
Text: JA N 1N645-1 thru JA N 1N649-1 M ierosemi Corp. f The d io a e e x p e r ts SANTA A N A, CA SC O TTSD A LE. A Z ☆JAN S* F o r m ore in fo rm a tio n call: 714 9 7 9-8220 FEA TU R ES MILITARY RECTIFIERS • MICROMINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE
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1N645-1
1N649-1
MIL-S-19500/240
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PDF
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1n645
Abstract: 1n649 1N64 1N646
Text: 1N645 THRU 1N649 MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 225 to 600 Volts Current- 400 Milliamperes FEATURES ♦ High temperature metallurgical^ bonded compression contacts as found in diode-con structed rectifiers ♦ 0.4 Ampere operation at Ta = 25’C with no ther^
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1N645
1N649
MIL-S-19500
1n649
1N64
1N646
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PDF
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N645-1N649 SILICON RECTFIER DIODES Available Non-RoHS standard or RoHS compliant (add PBF suffix) Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number MAXIMUM RATINGS
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1N645-1N649
MIL-PRF-19500,
1N645
1N646
1N647
1N648
1N649
DO-35A
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DIODE 1N649
Abstract: 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
Text: M ilitary Q ualifications Q u a l i f i e d Par ts Part Number Qual Level Page Part Number Qual Level Page 1N270 JAN, JAN TX, JAN TX V 32 1N4454/1N4454-1 JAN, JA N TX , JA N TX V 11 1N276 JAN, JAN TX, JAN TX V 32 1N 4464 thru 1N4496 JAN, JA N TX , JA N TX V
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1N270
1N276
1N277
1N645/1N645-1
1N647/1N647-1
1N746A-1
1N759A-1
1N914
1N962B-1
1N973B-1
DIODE 1N649
1n41481 zener diode
diode 1N645
1N4148-1 JAN
1N5619 JAN
1N270 JAN
diode 1n4454
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PDF
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