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    1N6510 Price and Stock

    Microchip Technology Inc 1N6510

    TVS DIODE 16CFLATPACK
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    Microchip Technology Inc JANTX1N6510

    DIODE GP 75V 300MA 16FLATPACK
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    Microchip Technology Inc JANTXV1N6510

    Arrays _ 16L FP, Projected EOL: 2049-02-05
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    Microchip Technology Inc JANTXV1N6510 408 32 Weeks
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    Microchip Technology Inc MS1N6510

    Arrays _ 16L FP, Projected EOL: 2049-02-05
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    Microchip Technology Inc JAN1N6510

    Arrays _ 16L FP, Projected EOL: 2049-02-05
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    1N6510 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N6510 Microsemi MONOLITHIC AIR ISOLATED DIODE ARRAY Original PDF
    1N6510 Microsemi Diode Array; Package: Flatpack; Cj (pF): 4; trr (nsec): 10; VF (V): 1; IF (A): 0.3; Vrrm (V): 75; Original PDF
    1N6510 Microsemi MONOLITHIC AIR ISOLATED DIODE ARRAY Original PDF
    1N6510 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N6510F Microsemi Diode Array Original PDF

    1N6510 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N6510

    Abstract: MX1N6510
    Text: 1N6510 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as


    Original     		PDF 1N6510 16-PIN 1N6510 MX1N6510

    1N6510

    Abstract: 1N6101 1N6510 JANTX
    Text: 1N6101 and 1N6510 JANTX, JANTXV A Microsemi Company 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: 617 924-9280 FAX: (617) 924-1235 MIL -PRF-19500/474 Features • • • • • BV ≥ 75 V @ 5 µA IR ≤ 100 nA @ 40 V VF ≤ 1 V @ 100 mA C… 4.0 pF (MAX)


    Original     		PDF 1N6101 1N6510 -PRF-19500/474 1N6101 1N6510 1N6510 JANTX

    1N6510

    Abstract: MSC1009
    Text: 1N6510 JANTX, JANTXV A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • QUALIFIED PARTS LISTING: MIL-PRF-19500/474 Bv > 75V at 5uA


    Original     		PDF 1N6510 MIL-PRF-19500/474 100mAdc 10mAdc, 300us MSC1009 1N6510

    Untitled

    Abstract: No abstract text available
    Text: 1N6510 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as


    Original     		PDF 1N6510 16-PIN

    1N6510

    Abstract: Diode Array
    Text: SENSITRON SEMICONDUCTOR 1N6510 TECHNICAL DATA DATA SHEET 4207, REV. - Isolated Diode Array Applications: • High Frequency Data Lines  RS-323 & RS-432 Networks  LAN, Ethernet, I/O Ports  IEC61000-4 compatible for ESD / EFT / Surge Features:  


    Original     		PDF 1N6510 RS-323 RS-432 IEC61000-4 1N6510 Diode Array

    1N6510

    Abstract: No abstract text available
    Text: 1N6510 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 75V at 5uA Ir < 100nA at 40V


    Original     		PDF 1N6510 100nA 100mAdc 10mAdc, 300us MSC1021 1N6510

    1N6510 JAN

    Abstract: 1N6510 MX1N6510
    Text: 1N6510 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as


    Original     		PDF 1N6510 16-PIN 1N6510 JAN 1N6510 MX1N6510

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    1N6496

    Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
    Text: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,


    Original     		PDF MIL-PRF-19500/474G MIL-PRF-19500/474F 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N6496 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100

    1N5770

    Abstract: No abstract text available
    Text: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,


    Original     		PDF MIL-PRF-19500/474F MIL-PRF-19500/474E 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N5770

    FDC9268

    Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP
    Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):


    Original     		PDF

    1N6510 JAN

    Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
    Text: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has


    Original     		PDF SG6100/SG6511 SG6101/SG6510 SG6100/SG6511 SG6101/SG6510 1N6100) 14-PIN SG6101J 1N6101) 1N6510 JAN 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511

    Untitled

    Abstract: No abstract text available
    Text: J Z ^ r\/E O HLHB5 1N6510 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 75V at 5uA


    OCR Scan     		PDF 1N6510 100nA 100mAdc 300us MSC1021

    SG6101J

    Abstract: sg6101
    Text: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has


    OCR Scan     		PDF SG6100/SG6511 SG6101/SG6510 16-PIN SG6101J 1N6101) 14-PIN SG6101J sg6101