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    1N8026-GA SPICE

    Abstract: No abstract text available
    Text: 1N8026-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8026-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		1N8026-GA 1N8026-GA. 05-SEP-2013 1N8026-GA 1N8026 TEMP-24) 45E-15 1N8026-GA SPICE PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N8026-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		1N8026-GA Mil-PRF-19500 TEMP-24) 1N8026 45E-15 00E-10 00E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N8026-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		1N8026-GA Mil-PRF-19500 1N8026 45E-15 00E-10 00E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N8026-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		1N8026-GA Mil-PRF-19500 TEMP-24) 1N8026 45E-15 00E-10 00E-03 PDF