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    1N829 DIE Search Results

    1N829 DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation

    1N829 DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N821

    Abstract: 1N829 CD821 CD821A CD823 CD823A CD825 CD825A CD829A 1n829 die
    Text: • 1N821 THRU 1N829 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/159 CD821 thru • MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD829A • ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829


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    PDF 1N821 1N829 MIL-PRF-19500/159 CD821 CD829A 1N829 CD821 CD821A CD823 CD823A CD825 CD825A CD829A 1n829 die

    H 48 zener diode

    Abstract: 1N821 1N829 CD821 CD821A CD823 CD823A CD825 CD825A CD829A
    Text: • 1N821 THRU 1N829 AVAILABLE IN PER MIL-PRF-19500/159 JANHC AND JANKC CD821 thru • MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD829A • ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829


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    PDF 1N821 1N829 MIL-PRF-19500/159 CD821 CD829A 1N829 H 48 zener diode CD821 CD821A CD823 CD823A CD825 CD825A CD829A

    1n825 equivalent

    Abstract: 1N821 1n823 equivalent 1N825 1N829 1n821 die 1N823 1N827 DIODE 1N827 1n829 equivalent
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 – Monolithic Temperature Compensated Zener Reference Chips


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    PDF 1N821 1N829 MIL-PRF-19500/159 1N821 1N823 1N825 1N827 1N829) 1n825 equivalent 1n823 equivalent 1N825 1N829 1n821 die 1N823 1N827 DIODE 1N827 1n829 equivalent

    ZENER diode TESTING CIRCUIT

    Abstract: 1N3154 1N3157A 1N4565 1N4584 1N821 1N829 1N935 1N940B 1N941
    Text: Summer 1997 MicroNote Series 205 by Kent Walters, Microsemi Scottsdale Zero-Temperature Coefficient Reference Diodes In MicroNotes 203, zeners were described with their characteristic positive temperature coefficient αVZ or TC herein for nominal voltages


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    PDF tN940B 1N941 1N946B 1N4057 1N4085 ZENER diode TESTING CIRCUIT 1N3154 1N3157A 1N4565 1N4584 1N821 1N829 1N935 1N940B

    201 Zener diode

    Abstract: Forward Reference Diode precision reference zener diode 1N4565 1N4584 1N821 1N829 1N935 1N940B 1N941
    Text: Summer 1997 MicroNote Series 205 by Kent Walters, Microsemi Scottsdale Zero-Temperature Coefficient Reference Diodes In MicroNotes 203, zeners were described with their characteristic positive temperature coefficient α VZ or TC herein for nominal voltages


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    PDF N940B 1N941 1N946B 1N4057 1N4085 201 Zener diode Forward Reference Diode precision reference zener diode 1N4565 1N4584 1N821 1N829 1N935 1N940B

    CD827

    Abstract: zener 7.5 B 48 CD823 CD823A CD825 CD825A CD826 CD829A 1N821 1N829
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 – Monolithic Temperature Compensated Zener Reference Chips


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    PDF 1N821 1N829 CD821 CD829A LDS-0052 CD827 zener 7.5 B 48 CD823 CD823A CD825 CD825A CD826 CD829A 1N829

    LM308 Op Amp IC

    Abstract: 00561504 1n823a lm308 LM308 typical applications LM199 1N825 ZENER 9v zener lh0044 application zener diode reference
    Text: National Semiconductor Application Note 184 July 1977 Interfacing between digital and analog signals is becoming increasingly important with the proliferation of digital signal processing. System accuracy is often limited by the accuracy of the converter and a limitation of the converter is the


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    PDF AN-184 LM308 Op Amp IC 00561504 1n823a lm308 LM308 typical applications LM199 1N825 ZENER 9v zener lh0044 application zener diode reference

    LM308 Op Amp IC

    Abstract: 1N825 ZENER LM199 zener LM329 1N829 AN-184 C1995 LM129 LM199A LM399
    Text: National Semiconductor Application Note 184 July 1977 Interfacing between digital and analog signals is becoming increasingly important with the proliferation of digital signal processing System accuracy is often limited by the accuracy of the converter and a limitation of the converter is the


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    LM308 Op Amp IC

    Abstract: 1n823a LM199 1N825 ZENER LM308 equivalent National Discrete Products Databook zener LM329 LM399A AN-184 LM129
    Text: Interfacing between digital and analog signals is becoming increasingly important with the proliferation of digital signal processing. System accuracy is often limited by the accuracy of the converter and a limitation of the converter is the voltage reference. Design can be difficult if the reference is


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    PDF an005615 LM308 Op Amp IC 1n823a LM199 1N825 ZENER LM308 equivalent National Discrete Products Databook zener LM329 LM399A AN-184 LM129

    LM199

    Abstract: LM308 replacement LX5600 AN-161 1n829 noise LM308 Op Amp IC LM308 application LM308
    Text: A new linear IC now provides the ultimate in highly stable voltage references. Now, a new monolithic IC the LM199, out-performs zeners and can provide a 6.9V reference with a temperature drift of less than 1 ppm/˚ and excellent long term stability. This new IC, uses a unique subsurface zener to


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    PDF LM199, an005613 LM199 LM308 replacement LX5600 AN-161 1n829 noise LM308 Op Amp IC LM308 application LM308

    LX5600

    Abstract: LM308 replacement lm308 equivalent LM199 LM308 Zener diode with 9v LM395 datasheet LM108A LM321 LM321 equivalent
    Text: National Semiconductor Application Note 161 June 1976 A new linear IC now provides the ultimate in highly stable voltage references Now a new monolithic IC the LM199 out-performs zeners and can provide a 6 9V reference with a temperature drift of less than 1 ppm and excellent long


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    PDF LM199 LX5600 LM308 replacement lm308 equivalent LM199 LM308 Zener diode with 9v LM395 datasheet LM108A LM321 LM321 equivalent

    LX5600

    Abstract: LM308 replacement 1n829 noise an161 application LM308 Op Amp IC temperature stabiliser circuit diagram LM321 equivalent LM308 zener diode voltage drop and breakdown LM199
    Text: National Semiconductor Application Note 161 June 1976 A new linear IC now provides the ultimate in highly stable voltage references. Now, a new monolithic IC the LM199, out-performs zeners and can provide a 6.9V reference with a temperature drift of less than 1 ppm/˚ and excellent long term


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    PDF LM199, LX5600 LM308 replacement 1n829 noise an161 application LM308 Op Amp IC temperature stabiliser circuit diagram LM321 equivalent LM308 zener diode voltage drop and breakdown LM199

    1N823-1

    Abstract: 1N821-1 JANTX 1N821-1 1N821UR-1 1N823UR-1 1N825-1 1N825UR-1 1N827-1 1N827UR-1 1N829-1
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 May 2009. MIL-PRF-19500/159P 4 February 2009 SUPERSEDING MIL-PRF-19500/159N 1 APRIL 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED,


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    PDF MIL-PRF-19500/159P MIL-PRF-19500/159N 1N821-1, 1N823-1, 1N825-1, 1N827-1, 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N823-1 1N821-1 JANTX 1N821-1 1N821UR-1 1N823UR-1 1N825-1 1N825UR-1 1N827-1 1N827UR-1 1N829-1

    1N821-1

    Abstract: 1N829-1 MIL-PRF-19500 zener diode 1N829-1 JANTX
    Text: INCHES POUND The documentation process conversion measures necessary to comply with this revision shall be completed by 29 January 2000. MIL-PRF-19500/159K 19 November 1999 SUPERSEDING MIL-PRF-19500/159J 1 July 1998 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,


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    PDF MIL-PRF-19500/159K MIL-PRF-19500/159J 1N821-1, 1N823-1, 1N825-1, 1N827-1, 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N821-1 1N829-1 MIL-PRF-19500 zener diode 1N829-1 JANTX

    D821A

    Abstract: d823a
    Text: • 1N821 THRU 1N829 AVAILABLE IN CD821 JANC thru • MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS CD829A • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES


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    PDF 1N821 1N829 CD821 1N829 CD829A CD821 D821A d823a

    E3055

    Abstract: 1N821 1N829 CD821 CD823 CD823A CD825 CD825A CD826 CD829A
    Text: CD821 1N821 THRU 1N829 AVAILABLE IN JANC thru • MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS CD829A • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES


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    PDF 1N821 1N829 1N829 CD821 CD829A 2302S54 E3055 CD823 CD823A CD825 CD825A CD826 CD829A

    C0821

    Abstract: 1N821 CD821 CD821A CD826 CD827A COMPENSATED DEVICES INC zener discrete
    Text: 2GE D C OM PEN SA TED DEVICES INC 23GE554 OGGGB^S 3 . • MONOUTHIC TEMPERATURE COMPEMSATEB ZENER IEFEREHCE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE T-il-os; CD821 • &2 AND &55 VOLT NOMINAL ZENER VOLTAGES thru • ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829


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    PDF H3D2554 1N821 1N821T CD821 CD829A C0821 CD821A CD826 CD827A COMPENSATED DEVICES INC zener discrete

    CH829

    Abstract: diode Lz zener i829 1N4565A 1N4584A 1N829 CH821 CH823 CH825 CH827
    Text: T EM P E R A T U R E COMPENSATED VOLTAGE REGULATOR PLANAR DIODE CHIPS 6.2-6.4 VOLTS SINGLE CHIP Electrically equivalent to the JE D E C IN 821 - 1N829 1N4565A - 1N4584A C om patible w ith u ltraso n ic and therm ocom pression lead bonding, scru b and eutectic preform die bonding.


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    PDF 1N829 1N4565A- 1N4584A CH4582A CH4583A CH4584A CH829 diode Lz zener i829 1N4565A 1N4584A CH821 CH823 CH825 CH827

    1n4573

    Abstract: 1n4573a die 1N827A 1n4579 10823a 1C45 1n829 1n4573 die
    Text: M O T O R O L A SC O I O D E S / O P T O l 6367255 MOTOROLA SC 34 <D I O D E S / O P T O DE | b3fci7S55 0 0 3 0 1 1 0 3 | 34C 38118 T -//- D 0 5" SILICON ZENER DIODE DICE continued) 1C821 & 1C4565 — SERIES DIE NO. LINE SOURCE — DZD400 This die provides performance equal to or better than that


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    PDF b3fci7S55 DZD400 1C821 1C4565 1N821 1N829 1N4565 1N4584 1N4765 1N4784 1n4573 1n4573a die 1N827A 1n4579 10823a 1C45 1n4573 die

    1M823-1

    Abstract: 1N827 DIODE 1N827 1N821-1 1N823 DIODE 1N825 1N829-1 1N825 1N827-1 1N821-1 JANTX
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 November 1994 MIL-S-19500/159H 16 Hav 1994 SUPERSEDING MIL-S-19500/159G 22 January 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,


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    PDF MIL-S-19500/159H MIL-S-19500/159G 1N821, 1N823, 1N825, 1N827, 1N829, 1N821-1, 1N823-1, 1N825-1, 1M823-1 1N827 DIODE 1N827 1N821-1 1N823 DIODE 1N825 1N829-1 1N825 1N827-1 1N821-1 JANTX

    1N4010

    Abstract: 8245 diode 1N3501
    Text: Zero-TC Reference Diodes 49.6 6.5 6.5 6.5 6.5 6.2 6.2 6.2 6.2 6.2 Zzt <C2 IR uA) VR I Toi. I (V) [(+/-%) 0.005 160 0.001 12 0.0005! 12 0.001 12 0.001 12 ID O 0.04 0.0005 0.04 0.001 0.04 0.001 0.04 0.0005! 0.01 2 2 0,01 O 6.4 0.003 0.01 0.01 0.005 0.002 0.001


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    PDF DO-35 DO-710 1N4010 8245 diode 1N3501

    H957

    Abstract: No abstract text available
    Text: ZERO TEMPERATURE COMPENSATED REFERENCE DIODES Single Chip and Chip Stacks INDUSTRY STANDARD PART# MICROSEMI CHIP PART # (N o t* 1) DIE SIZE (N ot* 1) POWER RATING* DIE GEOMETRY DIE THICKNESS ( F lg u r* ) M ETA LLIZ A TIO N PACKAGING BACK OPTIONS WAFFLE F. VIAL


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    PDF 1N829, 1N6031 1EZ110D5- 1EZ110D 1EZ200D 2EZ200D 3EZ39D 3EZ200D H957

    MD4148

    Abstract: MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2
    Text: GENERAL PARAMETER RESTRICTIONS FOR 100% DICE TEST: U nm ounted dice d o n o t have the pow er ratings o f packaged devices, therefore test conditions as well as ratings m ay need to be reduced or sam pled in packaged form as described below: V p = 200 m A m axim um . A ccuracy variable above 50 m A , highly contact dependent.*


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    PDF 1N8211N829 1N9351N939 1N9411N945- CZ821CZ829 CZ935CZ939 CZ941CZ945 1N61031N6137 1N61391M6173 DD6103DD6137 DD6139DD6173 MD4148 MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2

    ma 1458

    Abstract: MZ3157 IN821 MZ827A MZ3154 MZ3156 MZ821 MZ823 1n823 equivalent MZ827
    Text: b £ O ?& > O UJ CO Ì¡ u lg io O O, lu ; s o n i a p è 2 « £ c 2 > . E3 £ o o u .5 n fa c « a 2 E <oz X o uj z U lte i§ s! I - P UJ < t oc acccc < Ui Ui CCÛ-z S uj UJ N S a i £0 ö> a» E . Q) E ? $ Q i H m m h . CM CM CM CM OOOOOO se io +i un u o o ,


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    PDF MZ821 MZ823 MZ825 MZ827 MZ935 MZ938 MZ941 MZ944 MZ3154 MZ3156 ma 1458 MZ3157 IN821 MZ827A 1n823 equivalent