NXP date code marking
Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
Text: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview
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PMBT2222;
PMBT2222A
O-236AB)
PMBT2222
PMBT2222A
O-236AB
PMBT2907
PMBT2907A
NXP date code marking
marking 1B
marking code v6 SOT23
NXP MARKING SMD IC CODE
SOT23 NXP power dissipation TO-236AB
MARKING CODE SMD IC
PMBT2222A,215
smd code marking .1p
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PDF
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LMBT2222ATT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.
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Original
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LMBT2222ATT1G
S-LMBT2222ATT1G
SC-89
AEC-Q101
LMBT2222ATT3G
S-LMBT2222ATT3G
463C-02.
LMBT2222ATT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP
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Original
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MMDT2227
222A-Type
907A-Type
OT-363
OT-363,
MIL-STD-202,
-150mA,
-15mA
-500mA,
-50mA
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PDF
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1P NPN
Abstract: MMBT2222A 1P SOT-23 MMBT2222A UTC
Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE
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MMBT2222A
500mA.
OT-23
QW-R206-019
1P NPN
MMBT2222A
1P SOT-23
MMBT2222A UTC
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PDF
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TRANSISTOR 1P
Abstract: TRANSISTOR code marking 1P 3 marking code 1P SC-89 1P surface mount transistor
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.
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LMBT2222ATT1G
SC-89
SC-89
LMBT2222ATT3G
463C-01
463C-02.
TRANSISTOR 1P
TRANSISTOR code marking 1P 3
marking code 1P
1P surface mount transistor
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PDF
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UTC 225
Abstract: No abstract text available
Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE
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Original
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MMBT2222A
500mA.
OT-23
QW-R206-019
UTC 225
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MMDT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data
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MMDT4401
OT-363
OT-363,
MIL-STD-202,
150mA,
500mA,
100MHz
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PDF
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TRANSISTOR 1P
Abstract: Transistor MARKING 1P 1p TRANSISTOR marking 1p transistor transistor 1P F marking transistor 1p 1 TK2222ATTD03
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)
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Original
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WBFBP-03A
TK2222ATTD03
WBFBP-03A
TK2907ATTD03)
150mA
100MHz
150mA
TRANSISTOR 1P
Transistor MARKING 1P
1p TRANSISTOR
marking 1p transistor
transistor 1P F
marking transistor 1p 1
TK2222ATTD03
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)
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WBFBP-03A
MMBT2222AE
WBFBP-03A
MMBT2907AE)
150mA
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)
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WBFBP-03A
TK2222ATTD03
WBFBP-03A
TK2907ATTD03)
500mA
150mA
100MHz
150mA
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)
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Original
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WBFBP-03A
TK2222ATTD03
WBFBP-03A
TK2907ATTD03)
150mA
500mA
100MHz
150mA
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PDF
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MMBT2222AT
Abstract: No abstract text available
Text: MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907FW Ideal for Medium Power Amplification and Switching
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MMBT2222AT
OT-523
MMBT2907FW)
50BSC
17-Aug-2011
MMBT2222AT
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PDF
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M1B marking
Abstract: 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collectorā-āBase Voltage
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
M1B marking
1N914 SOT-23
MMBT2222A
1n914 sot
marking 1p sot23
1P SOT-23
marking code m1b
MMBT2222ALT1G
1p sot
MMBT2222LT3G
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PDF
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SILICON GENERAL
Abstract: Transistor MARKING 1P 1P NPN TRANSISTOR code marking 1P 3 1p transistor sot323 MMBT2222AW MMBT2907AW TRANSISTOR MARKING CODE 1P mmbt2907* transistor marking 1p transistor
Text: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE Complementary PNP Type Available MMBT2907AW Epitaxial Planar Die Construction
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MMBT2222AW
OT-323
MMBT2907AW)
150mA,
150mA
20-Oct-2009
SILICON GENERAL
Transistor MARKING 1P
1P NPN
TRANSISTOR code marking 1P 3
1p transistor sot323
MMBT2222AW
MMBT2907AW
TRANSISTOR MARKING CODE 1P
mmbt2907* transistor
marking 1p transistor
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PDF
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DUAL NPN K1P
Abstract: marking 1P sot363
Text: PRELIMINARY MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data
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Original
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MMDT2222A
MMDT2907A)
OT-363
OT-363,
MIL-STD-202,
100MHz
150mA,
DS30125
DUAL NPN K1P
marking 1P sot363
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PDF
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LMBT2222AWT1G
Abstract: marking 1p npn transistor 1P F
Text: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount
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Original
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LMBT2222AWT1G
323/SC
LMBT2222AWT1G
marking 1p npn
transistor 1P F
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PDF
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DS199
Abstract: No abstract text available
Text: FMMT2222 FMMT2222A S0T23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 - 1B FMMT2222A - 1P FMMT2222R - 2P FMMT2222AR - 3P ABSOLUTE MAXIMUM RATINGS SY M B O L PAR AM ETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage
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OCR Scan
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S0T23
FMMT2222
FMMT2222A
FMMT2222R
FMMT2222AR
FMMT2222
FMMT2222A
140KHz
DS199
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PDF
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Untitled
Abstract: No abstract text available
Text: FMMT2222 FMMT2222A S 0 T 2 3 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 FM M T2222A FMMT2222R FMMT2222AR - IB 1P 2P 3P ABSOLUTE M A X IM U M RATINGS SYM BOL PARAMETER C ollector-B ase V oltage C o llecto r-E m itte r V oltag e E m itter-B ase V oltag e
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OCR Scan
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FMMT2222
FMMT2222A
T2222A
FMMT2222R
FMMT2222AR
FMMT2222
T2222
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PDF
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Maxim sot-363
Abstract: No abstract text available
Text: MMDT3904 VISHAY DUAL NPN S M A LL SIGNAL S U R F A C E MOUNT TRANSISTOR I/UTEMir p o w e fs e h co n w jcto r / Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 Fl R KXX Mechanical Data_
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OCR Scan
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MMDT3904
OT-363
OT-363,
MIL-STD-202,
100MHz
3001ns,
DS30088
Maxim sot-363
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PDF
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marking WMP
Abstract: 1P NPN NPN SMALL SIGNAL TRANSISTOR TRANSISTOR MARKING TE SOT363 marking 1p transistor TRANSISTOR 1P MMDT4401
Text: PRELIMINARY MMDT4401 VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR /l i t e w j i I POWER SEMICONDUCTOR/ Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 -HaH- R N E,
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OCR Scan
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MMDT4401
OT-363,
MIL-STD-202,
OT-363
MMDT4401
100MHz
150mA,
300ns,
DS30111
marking WMP
1P NPN
NPN SMALL SIGNAL TRANSISTOR
TRANSISTOR MARKING TE SOT363
marking 1p transistor
TRANSISTOR 1P
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PDF
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K6N sot363 marking
Abstract: 1P NPN MMDT3904 1P surface mount transistor TRANSISTOR marking k2 dual 33ro Scans-0026527
Text: PRELIM INARY MMDT3904 VISHAY DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Ì LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 R Ei R k Mechanical Data_
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OCR Scan
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MMDT3904
OT-363,
MIL-STD-202,
OT-363
MMDT3904
100MHz
100nA,
300tis,
DS30088
K6N sot363 marking
1P NPN
1P surface mount transistor
TRANSISTOR marking k2 dual
33ro
Scans-0026527
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN switching transistors PMBT2222; PMBT2222A PINNING FEATURES • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification.
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OCR Scan
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PMBT2222;
PMBT2222A
PMBT2907
PMBT2907A.
PMBT2222
MAM255
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MMST2907A VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR I/UTEMir / p o w e fs e h co n w jcto r Features Epitaxial Planar Die Construction Complementary NPN Type Available MMST2222A) Ultra-Small Surface Mount Package SOT-323 TOR VIEW Mechanical Data_
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OCR Scan
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MMST2907A
MMST2222A)
OT-323
OT-323,
MIL-STD-202,
-150mA,
-15mA
-500mA,
-50mA
150mA,
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MMST4403 VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR I/UTEMir / powefsehconwjctor Features Epitaxial Planar Die Construction Complementary NPN Type Available MMST4401) Ultra-Small Surface Mount Package SOT-323 -*l ¡h -' TOR VIEW Mechanical Data_
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OCR Scan
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MMST4403
MMST4401)
OT-323
OT-323,
MIL-STD-202,
-20mA,
100MHz
-150mA,
-15mA
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PDF
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