1R4N60P Search Results

1R4N60P Price and Stock

Filter by Manufacturer


IXYS Corporation IXTP1R4N60P MOSFET N-CH 600V 1.4A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP1R4N60P	Tube			50	1 - 10 - 100 $0.7328 1000 $0.7328 10000 $0.7328	Buy Now
IXYS Corporation IXTY1R4N60P MOSFET N-CH 600V 1.4A TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTY1R4N60P	Tube			70	1 - 10 - 100 $0.681 1000 $0.681 10000 $0.681	Buy Now
IXYS Corporation IXTU1R4N60P MOSFET N-CH 600V 1.4A TO251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTU1R4N60P	Tube			75	1 - 10 - 100 $0.78387 1000 $0.78387 10000 $0.78387	Buy Now
IXYS Corporation IXTY1R4N60P-TRL MOSFET N-CH 600V 1.4A TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTY1R4N60P-TRL	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.425	Buy Now
IXYS Integrated Circuits Division IXTP1R4N60P MOSFET DIS.1.4A 600V N-CH TO220 POLARHV THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTP1R4N60P					1 $0.7598 10 $0.7598 100 $0.6607 1000 $0.6607 10000 $0.6607	Get Quote

1R4N60P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM Power MOSFET IXTP 1R4N60P IXTU 1R4N60P IXTY 1R4N60P = 600 = 1.4 ≤ 9.0 VDSS ID25 RDS on V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	1R4N60P O-220	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information PolarHVTM Power MOSFET IXTP 1R4N60P IXTY 1R4N60P VDSS ID25 RDS on = 600 = 1.4 ≤ 9.0 V A Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	1R4N60P 1R4N60P O-220 O-252 405B2	PDF
1R4N60P Abstract: ixtp1r4n60p IXTY1R4N60P Text: Advance Technical Information PolarHVTM Power MOSFET IXTP 1R4N60P IXTY 1R4N60P IXTU 1R4N60P = 600 = 1.4 ≤ 9.0 VDSS ID25 RDS on V A Ω N-Channel Enhancement Mode TO-251 AA (IXTU) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	1R4N60P O-251 O-220 405B2 1R4N60P ixtp1r4n60p IXTY1R4N60P	PDF
1R4N60P Abstract: IXTP1R4N60P Text: PolarHVTM Power MOSFET IXTP 1R4N60P IXTU 1R4N60P IXTY 1R4N60P = 600 = 1.4 ≤ 9.0 VDSS ID25 RDS on V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	1R4N60P O-220 1R4N60P IXTP1R4N60P	PDF
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF