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    1RFD120

    Abstract: TRANSISTOR IRFD120
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD120 IRFD123 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode • Ideal for Peripheral Control Applications • Intermediate 1 Watt Power Capability • Standard DIP Outline TMOS FET TRANSISTORS


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    PDF IRFD120 IRFD123 1RFD120 1RFD120 TRANSISTOR IRFD120

    irf0014

    Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024
    Text: PLASTIC PACKAGE HEXFETs ~ INTERNATIONAL SbE RECT IFIER D INTERNATIONAL r e c t i f i e r IOR 4äSSM55 0010554 1 • HEXDIpTM Package N-CHANNEL Typos Vos R d S ON (max) Ip cont >0M Pd TC - 25°C pulsed max A W Sì IRFD024 ' IRFD02S IRF0014 IRFQ015 60 IRFD123


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    PDF QQ1Q554 IRF0024 IRFD025 IRF0014 IRF0015 IRFD123 IRF0113 IRFD120 IRFD110 IRF0223 IRF09014 IRF0220 IRF09120 INTERNATIONAL RECTIFIER 9439 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024

    1RFD123

    Abstract: 1RFD120
    Text: HE D I MÖ55455 • 0000374 □ I ■ T-35-25 INTERNATIONAL R E C T I F I E R Data Sheet No. PD-9.385E _ INTERNATIONAL RECTIFIER HEXFET' TRANSISTORS II«R I IRFD1 SO IRFD1 S3 N-CHANNEL HEXDIP” 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


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    PDF T-35-25 C-127 IRFD120, IRFD123 S545E G0Gfl37c C-128 1RFD123 1RFD120