2SD2413G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification • Package ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SD2413G
2SD2413G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2413G Silicon NPN triple diffusion planar type For low-frequency output amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Marking Symbol: 1S ■ Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
2SD2413G
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91A SOT23
Abstract: FMMT591A FMMT491A DSA003699 91A PNP
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A FMMT591A ISSUE 3 - OCTOBER 1995 FEATURES Low equivalent on resistance RCE sat = 350mΩ at 1A TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 SYMBOL VALUE UNIT VCBO -40 V 0.1 Collector-Emitter Voltage
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FMMT591A
FMMT491A
100mA
-100mA*
-500mA*
-50mA,
100MHz
91A SOT23
FMMT591A
FMMT491A
DSA003699
91A PNP
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.
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LBC846ALT1G
LBC846
LBC847,
LBC850
LBC848,
LBC849
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.
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Original
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LBC846ALT1G
LBC846
LBC847,
LBC850
LBC848,
LBC849
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.
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Original
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LBC846ALT1G
LBC846
LBC847,
LBC850
LBC848,
LBC849
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.
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Original
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LBC846ALT1G
LBC846
LBC847,
LBC850
LBC848,
LBC849
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PDF
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LBC846BLT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.
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LBC846ALT1G
S-LBC846ALT1G
AEC-Q101
LBC846
LBC847,
LBC850
LBC848,
LBC849
LBC846BLT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.
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Original
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LBC846ALT1G
LBC846
LBC847,
LBC850
LBC848,
LBC849
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.
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Original
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LBC846ALT1G
LBC846
LBC847,
LBC850
LBC848,
LBC849
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PDF
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LBC850BLT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.
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Original
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LBC846ALT1G
S-LBC846ALT1G
AEC-Q101
LBC846
LBC847,
LBC850
LBC848,
LBC849
LBC850BLT1G
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PDF
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LBC847ALT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V LBC846ALT1G Series ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS
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Original
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LBC846ALT1G
AEC-Q101
S-LBC846ALT1G
LBC846
LBC847,
LBC850
LBC848,
LBC849
LBC847ALT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.
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Original
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LBC846ALT1G
LBC846
LBC847,
LBC850
LBC848,
LBC849
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.
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Original
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LBC846ALT1G
LBC846
LBC847,
LBC850
LBC848,
LBC849
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PDF
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MARKING fzt
Abstract: MARKING fzt 605 fzt 605 FZT704 FZT705 DSA003714
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 605 PART MARKING DETAIL FZT705 C E B ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT705
100ms
FZT704
MARKING fzt
MARKING fzt 605
fzt 605
FZT704
FZT705
DSA003714
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FZT705
Abstract: MARKING fzt FZT704 DSA003714
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT704 ISSUE 2 - SEPTEMBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED hFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 604 PART MARKING DETAIL FZT704 C E B ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT704
100ms
FZT705
FZT705
MARKING fzt
FZT704
DSA003714
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT705 ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * FAST SWITCHING * GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE FZT 605 PART MARKING DETAIL FZT705 C E C B ABSOLUTE MAXIMUM RATINGS.
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OT223
FZT705
100ms
FZT704
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st zo 607
Abstract: ZO 607 MA ZO 607 MA 135 zo 607 transistor zo 607 0124 Z0 607 MN ZO 607 transistor 2SC5275 B/B/CQ 643
Text: Ordering number: EN5185 2SC5275 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f = 1GHz . : NF = 1.4dB typ (f= 1.5GHz). • High gain: I S21e I 2= lOdB typ (f= 1.5GHz). • High cutoff frequency : fp = 11GHz typ.
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OCR Scan
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EN5185
2SC5275
10dBtyp
st zo 607
ZO 607 MA
ZO 607 MA 135
zo 607
transistor zo 607
0124
Z0 607 MN
ZO 607 transistor
B/B/CQ 643
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.
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OCR Scan
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bbS3T31
QQ23ti2S
BF994S
OT143
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5541a
Abstract: 2SC537 Transistor 4733 TA-0824 EN5541 2SC5375 IC 7484
Text: Ordering number: EN5541À 2SC5375 NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amp Applications F eatu re s •High gain : I S21e I 2= lOdB typ f= 1GHz . • High cutoff frequency : fr = 5.2GHz typ. A bsolute M axim um E atin g s at Ta = 25°C
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EN5541Ã
2SC5375
10VfIE
5541a
2SC537
Transistor 4733
TA-0824
EN5541
2SC5375
IC 7484
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PDF
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BF994S
Abstract: Marking G2 sot143 code marking MS mosfet marking code gg
Text: 7110SEL G D b 7 5 ti4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 143 microminiature envelope w ith source and substrate interconnected and intended fo r V H F applications in television tuners.
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OCR Scan
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BF994S
OT143
BF994S
Marking G2
sot143 code marking MS
mosfet marking code gg
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PDF
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Untitled
Abstract: No abstract text available
Text: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.
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OCR Scan
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BF996S
OT143
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PDF
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marking MS
Abstract: rt 0608 2SA1963 TA-0541 5GHz PNP transistor
Text: Ordering n u m b e r:E N 5230 No.5230 2SA1963 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications Features • Low noise : NF = 1.5dBtyp f=lGHz . • High gain : I S21e I z= 9dB typ (f= 1GHz). • High cutoff frequency : fr = 5GHz typ.
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OCR Scan
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EN5230
2SA1963
marking MS
rt 0608
TA-0541
5GHz PNP transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3 <; k i * mm m t • m. O TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • Superior Cross Modulation Performance. « r j U nit in mm r -e • Low Reverse Transfer Capacitance. : Crss = 20f!F TYP.
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3SK232
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