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Toshiba America Electronic Components 1SS382TE85LF DIODE ARRAY GEN PURP 80V 100MA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS382TE85LF	Digi-Reel	15,362		1	1 $0.39 10 $0.236 100 $0.39 1000 $0.09851 10000 $0.09851	Buy Now
	1SS382TE85LF	Cut Tape	15,362		1	1 $0.39 10 $0.236 100 $0.39 1000 $0.09851 10000 $0.09851	Buy Now
	1SS382TE85LF	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.08284	Buy Now
Mouser Electronics	1SS382TE85LF		4,067			1 $0.33 10 $0.209 100 $0.097 1000 $0.087 10000 $0.058	Buy Now
Bristol Electronics	1SS382TE85LF		3,465			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	1SS382TE85LF		2,772			1 $0.448 10 $0.448 100 $0.2016 1000 $0.1344 10000 $0.1344	Buy Now
EBV Elektronik	1SS382TE85LF			13 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Win Source Electronics	1SS382TE85LF		145,900			1 - 10 - 100 - 1000 $0.0875 10000 $0.0584	Buy Now
Toshiba America Electronic Components 1SS382(TE85L,F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	1SS382(TE85L,F)		11,276			1 $0.7 10 $0.7 100 $0.7 1000 $0.7 10000 $0.21	Buy Now
Avnet Asia	1SS382(TE85L,F)			24 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	1SS382(TE85L,F)	Cut Tape	3,040			1 - 10 $0.374 100 $0.142 1000 $0.0945 10000 $0.0795	Buy Now
Toshiba America Electronic Components 1SS382 DIODE ARRAY GP 80V 100MA USQ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	1SS382		145,700			1 - 10 - 100 - 1000 $0.113 10000 $0.076	Buy Now
Toshiba America Electronic Components 1SS382(TE85L) Rectifier Diode Switching 85V 0.1A 4ns 4-Pin USQ T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	1SS382(TE85L)		145,000			1 - 10 - 100 - 1000 $0.113 10000 $0.076	Buy Now

1SS382 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
1SS382	Toshiba	Japanese - Diodes	Original	PDF
1SS382	Toshiba	Diode - Silicon Epitaxial Pin Type	Original	PDF
1SS382	Toshiba	DIODE (ULTRA HIGH SPEED SWITCHING APLICATION)	Scan	PDF
1SS382	Toshiba	DIODE	Scan	PDF
1SS382TE85LF	Toshiba	1SS382TE85LF - Diode Switching 85V 0.3A 4-Pin USQ T/R	Original	PDF

1SS382 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)	Original	1SS382 100mA	PDF
1SS382 Abstract: No abstract text available Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm Small package Composed of 2 independent diodes. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)	Original	1SS382 1SS382	PDF
1SS382 Abstract: No abstract text available Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)	Original	1SS382 1SS382	PDF
1SS382 Abstract: No abstract text available Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : Trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C)	Original	1SS382 1SS382	PDF
1SS382 Abstract: No abstract text available Text: 1SS382 東芝ダイオードシリコンエピタキシャルプレーナ形 1SS382 ○ 超高速スイッチング用単位: mm z 4 端子超小型外囲器に独立したダイオードを 2 個搭載しており超高密度実装に最適です。 z 順方向電圧が低い。	Original	1SS382 100mA 1SS382	PDF
1SS382 Abstract: No abstract text available Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : Trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C)	Original	1SS382 1SS382	PDF
Untitled Abstract: No abstract text available Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : Trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C)	Original	1SS382	PDF
Untitled Abstract: No abstract text available Text: 1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application Unit: mm Small package Composed of 2 independent diodes. Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : Trr = 1.6ns (typ.) Maximum Ratings (Ta = 25°C)	Original	1SS382 961001EAA2'	PDF
SCJ0004N Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT Text: 東芝半導体製品総覧表 2009 年 7 月版ダイオード整流ダイオード可変容量ダイオード高周波スイッチ用ダイオードツエナーダイオードスイッチングダイオードショットキーバリアダイオード	Original	SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT	PDF
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983	PDF
Variable Capacitance Diodes Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24	PDF
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R	PDF
ESM 740 Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.	Original	SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126	PDF
LT 543 common cathode Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current	Original	2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor	PDF

CMZB220 Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B Text: 東芝半導体製品総覧表 2011 年 1 月版ダイオード整流用ダイオード可変容量ダイオード高周波スイッチ用ダイオードツェナーダイオードスイッチングダイオードショットキバリアダイオード	Original	SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B	PDF
HN4C06J Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306 Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2	Original		PDF
CMG03 Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01 Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01	PDF
2fu smd transistor Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B	PDF
DF2S3.6SC Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS Text: 東芝半導体製品総覧表 2010 年 1 月版ダイオード整流ダイオード可変容量ダイオード高周波スイッチ用ダイオードツエナーダイオードスイッチングダイオードショットキーバリアダイオード	Original	SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 DF2S3.6SC CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS	PDF
smd diode Lz zener Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B	PDF
1SS382 Abstract: No abstract text available Text: TOSHIBA 1SS382 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS382 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 • • • • Small Package Composed of 2 independentdiodes. Low Forward Voltage : Vp 3 = 0.92V (TYP.) Fast Reverse Recovery Time : trr= 1.6ns (TYP.)	OCR Scan	1SS382 961001EAA2' 1SS382	PDF
Untitled Abstract: No abstract text available Text: 1SS382 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Composed of 2 independentdiodes. Low Forward Voitage : Vy 3 = 0.9 2V (TYP.) Fast Reverse Recovery Time ; trr = 1.6ns (TYP,)	OCR Scan	1SS382 961001EAA2'	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 1SS382 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 • • • • j1. 25± Small Package Composed of 2 independentdiodes. Low Forward Voltage : Vp 3 = 0.92V (TYP.) Fast Reverse Recovery Time : trr= 1.6ns (TYP.)	OCR Scan	1SS382 961001EAA2'	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 1SS382 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION 2.1 ± 0.1 • • • • j1. 25± Small Package Composed of 2 independentdiodes. Low Forward Voltage : Vp 3 = 0.92V (TYP.) Fast Reverse Recovery Time : trr= 1.6ns (TYP.)	OCR Scan	1SS382 961001EAA2'	PDF

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1SS382 Price and Stock

Toshiba America Electronic Components 1SS382TE85LF

Toshiba America Electronic Components 1SS382(TE85L,F)

Toshiba America Electronic Components 1SS382

Toshiba America Electronic Components 1SS382(TE85L)

1SS382 Datasheets (5)

1SS382 Datasheets Context Search

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1SS382

1SS382

1SS382

1SS382

1SS382

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SCJ0004N

lm2804

Variable Capacitance Diodes

SSM3J307T

ESM 740

LT 543 common cathode

CMZB220

HN4C06J

CMG03

2fu smd transistor

DF2S3.6SC

smd diode Lz zener

1SS382

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