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Toshiba America Electronic Components 1SS383(TE85L,F) DIODE ARR SCHOTT 40V 100MA USQ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS383(TE85L,F)	Cut Tape	24,079		1	1 $0.33 10 $0.205 100 $0.33 1000 $0.08432 10000 $0.08432	Buy Now
	1SS383(TE85L,F)	Digi-Reel	24,079		1	1 $0.33 10 $0.205 100 $0.33 1000 $0.08432 10000 $0.08432	Buy Now
	1SS383(TE85L,F)	Reel	21,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.07062	Buy Now
Mouser Electronics	1SS383(TE85L,F)		3,566			1 $0.28 10 $0.18 100 $0.083 1000 $0.074 10000 $0.049	Buy Now
Verical	1SS383(TE85L,F)		731		220	1 - 10 - 100 - 1000 $0.1425 10000 $0.1425	Buy Now
Newark	1SS383(TE85L,F)	Cut Tape	2,995		5	1 $0.469 10 $0.36 100 $0.171 1000 $0.095 10000 $0.095	Buy Now
Chip1Stop	1SS383(TE85L,F)	Cut Tape	731			1 - 10 $0.214 100 $0.114 1000 $0.114 10000 $0.114	Buy Now

EBV Elektronik	1SS383(TE85L,F)			19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi 1SS383T1G DIODE ARR SCHOTT 40V 300MA SC82
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS383T1G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	1SS383T1G	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	1SS383T1G		9,615		1	1 $0.1083 10 $0.1083 100 $0.1018 1000 $0.0921 10000 $0.0921	Buy Now
Rochester Electronics LLC 1SS383T1G DIODE ARR SCHOTT 40V 300MA SC82
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS383T1G	Bulk			2,664	1 - 10 - 100 - 1000 - 10000 $0.11	Buy Now
Aptina Imaging 1SS383T1G Rectifier Diode Schottky 0.3A 4-Pin(3+Tab) SC-82AB T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	1SS383T1G		9,615		3,258	1 - 10 - 100 - 1000 - 10000 $0.1151	Buy Now
Toshiba America Electronic Components 1SS383 (TE85L,F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	1SS383 (TE85L,F)		3,308			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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1SS383 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
1SS383	Kexin	Low Voltage High Speed Switching	Original	PDF
1SS383	Toshiba	Japanese - Diodes	Original	PDF
1SS383	Toshiba	shottky barrier diode	Original	PDF
1SS383	TY Semiconductor	Low Voltage High Speed Switching - SOT-343	Original	PDF
1SS383	Toshiba	DIODE LOW VOLTAGE HIGH SPEED SWITCHING	Scan	PDF
1SS383	Toshiba	DIODE	Scan	PDF
1SS383T1	On Semiconductor	DIODE SCHOTTKY DIODE 40V 0.3A 4SC-82 T/R	Original	PDF
1SS383T1G	On Semiconductor	DUAL SCHOTTKY SC82	Original	PDF
1SS383T2G	On Semiconductor	DUAL SCHOTTKY SC82	Original	PDF
1SS383(TE85L,F)	Toshiba	1SS383 - Diode Small Signal Schottky 45V 0.1A 4-Pin USQ T/R	Original	PDF

1SS383 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Product specification 1SS383 SOT-343 Unit: mm Features Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5 A (max) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage	Original	PDF	1SS383 OT-343
BAT54M3T5G Abstract: 419C-02 MMVL3700T1 Text: Schottky Diodes Device 1SS383T1 VR Volts CT @ V pF Max 25 40 IR @ V Volts VF Volts Max nA Max Volts 0.6 5000 40 Type Package Dual Independent SC−82AB Case 419C−02 BAT54CXV3T5 30 10 1.0 0.4 2000 25 Dual Common Cathode SC−89 Case 463C−03 RB751S40T1 40	Original	PDF	1SS383T1 SC-82AB 419C-02 BAT54CXV3T5 SC-89 463C-03 RB751S40T1 BAT54XV2T1 RB520S30T1 RB521S30T1 BAT54M3T5G 419C-02 MMVL3700T1
Untitled Abstract: No abstract text available Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	1SS383
SC-82 Abstract: 1SS383T1G 1SS383T2G marking 900AA 900aa Text: 1SS383T1G, 1SS383T2G Preferred Device Dual Schottky Diode Dual 40 V, 300 mA Low VF Schottky Diodes in 4−lead SC−82 package. Features • Low Forward Voltage: VF = 0.48 V typ @ IF = 100 mA • Low Reverse Current: IR = 5 mA (max) • Pb−Free Package May be Available. The G−Suffix Denotes a	Original	PDF	1SS383T1G, 1SS383T2G SC-82 900AA 1SS383T1G/D SC-82 1SS383T1G 1SS383T2G marking 900AA 900aa
BC237 Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1 Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53	Original	PDF	1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
1SS383 Abstract: No abstract text available Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	1SS383 1SS383
"MARKING DIAGRAM" Abstract: 1SS383T1 Text: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW	Original	PDF	1SS383T1 1SS383T1/D "MARKING DIAGRAM" 1SS383T1
1SS383 Abstract: No abstract text available Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF 3 = 0.54V (typ.) l Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C)	Original	PDF	1SS383 1SS383
diode code ae Abstract: brd8011 1SS383T1G Text: 1SS383T1G Preferred Device Dual Schottky Diode Dual 40 V, 300 mA Low VF Schottky Diodes in 4−lead SC−82 package. Features • Low Forward Voltage: VF = 0.48 V typ @ IF = 100 mA • Low Reverse Current: IR = 5 mA (max) • This is a Pb−Free Device*	Original	PDF	1SS383T1G SC-82 1SS383T1G/D diode code ae brd8011 1SS383T1G
Untitled Abstract: No abstract text available Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C)	Original	PDF	1SS383 10mfied 961001EAA2'
1SS383 Abstract: No abstract text available Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C)	Original	PDF	1SS383 10mtransportation 1SS383
1SS383 Abstract: No abstract text available Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	1SS383 1SS383
smd A4 Abstract: MARKING A4 f1 smd marking smd sot343 SM21 1SS383 smd marking a4 smd marking SOT343 Text: Diodes SMD Type Low Voltage High Speed Switching 1SS383 SOT-343 Unit: mm Features Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5 A (max) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage	Original	PDF	1SS383 OT-343 10orward smd A4 MARKING A4 f1 smd marking smd sot343 SM21 1SS383 smd marking a4 smd marking SOT343
SC82 Abstract: No abstract text available Text: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW	Original	PDF	1SS383T1 SC-82 1SS383T1 SC-82 3000/Tape 1SS383T1/D SC82

SCJ0004N Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT Text: 東芝半導体製品総覧表 2009 年 7 月版ダイオード整流ダイオード可変容量ダイオード高周波スイッチ用ダイオードツエナーダイオードスイッチングダイオードショットキーバリアダイオード	Original	PDF	SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	PDF	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Variable Capacitance Diodes Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	PDF	TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
DIODE marking S4 59A Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323 Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3	Original	PDF	REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
marking code 62z Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX	Original	PDF	HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	PDF	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R
Untitled Abstract: No abstract text available Text: T O SH IB A 1SS383 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING 2.1 ± 0.1 • • • • j 1.25± O.lj Small Package Composed of 2 independent diodes. Low Forward Voltage : V p 3 = 0.54V(TYP.)	OCR Scan	PDF	1SS383 961001EAA2'
Untitled Abstract: No abstract text available Text: TOSHIBA 1SS383 TOSHIBA DIODE 1 SS383 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING 2.1 ± 0.1 • • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp 3 = 0.54V (TYP.) Low Reverse Current ; I r = 5^A(MAX,)	OCR Scan	PDF	1SS383 SS383 961001EAA2'
1SS383 Abstract: No abstract text available Text: TOSHIBA 1SS383 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 • • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vjr 3 = 0.54V (TYP.) Low Reverse Current : Ir = 5,mA (MAX.)	OCR Scan	PDF	1SS383 961001EAA2' 1SS383
Untitled Abstract: No abstract text available Text: T O SH IB A 1SS383 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING 2.1 ± 0.1 • • • • j 1.25± O.lj Small Package Composed of 2 independent diodes. Low Forward Voltage : V p 3 = 0.54V(TYP.)	OCR Scan	PDF	1SS383 961001EAA2'

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1SS383 Price and Stock

Toshiba America Electronic Components 1SS383(TE85L,F)

onsemi 1SS383T1G

Rochester Electronics LLC 1SS383T1G

Aptina Imaging 1SS383T1G

Toshiba America Electronic Components 1SS383 (TE85L,F)

1SS383 Datasheets (10)

1SS383 Datasheets Context Search

Untitled

BAT54M3T5G

Untitled

SC-82

BC237

1SS383

"MARKING DIAGRAM"

1SS383

diode code ae

Untitled

1SS383

1SS383

smd A4

SC82

SCJ0004N

lm2804

Variable Capacitance Diodes

DIODE marking S4 59A

marking code 62z

SSM3J307T

Untitled

Untitled

1SS383

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