1SV283B
Abstract: C25V
Text: 1SV283B 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV283B ○ CATV チューナ電子同調用 単位: mm • 容量変化比が大きい。 : C2V/C25V = 11.5 標準 • 直列抵抗が小さい。 : rs = 0.55 Ω (標準)
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1SV283B
C2V/C25V
1SV283B
C25V
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Untitled
Abstract: No abstract text available
Text: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics, and small tracking error.
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1SV283
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DIODE C25
Abstract: C25 diode
Text: 1SV283B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283B CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics and small tracking error
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1SV283B
DIODE C25
C25 diode
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Untitled
Abstract: No abstract text available
Text: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. · Low series resistance: rs = 0.55 Ω (typ.) · Excellent C-V characteristics, and small tracking error.
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1SV283
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1SV283
Abstract: No abstract text available
Text: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics, and small tracking error.
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1SV283
1SV283
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1SV283
Abstract: No abstract text available
Text: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. · Low series resistance: rs = 0.55 Ω (typ.) · Excellent C-V characteristics, and small tracking error.
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1SV283
1SV283
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1SV283
Abstract: No abstract text available
Text: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics, and small tracking error.
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1SV283
1SV283
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847e
Abstract: 1SV283
Text: 20010110 1SV283 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 2V ～ 25V Ta = 27℃
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1SV283
685E-15
00E-06
847E-11
00E-10
847e
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1SV283B
Abstract: No abstract text available
Text: 1SV283B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283B Unit: mm CATV Tuning • High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics and small tracking error
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1SV283B
1SV283B
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1SV283B
Abstract: No abstract text available
Text: 1SV283B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283B CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics and small tracking error
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1SV283B
1SV283B
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SCJ0004N
Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード
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SCJ0004N
TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG07
CMG02
CRG01
SCJ0004N
JDV2S71E
DF2S6.8UFS
015AZ3.3
1ss421
CMG07
CMZ24
CRS06
DF2S5.6SC
DF3S6.8ECT
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MRF581
Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Text: RFݠ8⠜ RF RFׂڦᆌᆩࢅยऺ֩ 20066ሆ ݀քනǖ20066ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ&ጺঢ়RFׂ ० ᅃӲԨ்ࣷۼၠጲम༵ᅜ߀்ڦRF֩ăڼ8Ӳᄺփ૩ྔă்ᅙཁेକ߸ܠएᇀ
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Motorola transistor smd marking codes
Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.
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Variable Capacitance Diodes
Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG02
CRG01
CRG04
CMG06
Variable Capacitance Diodes
1SV283B
2fu smd transistor
bidirectional zener diode
015DZ4
015AZ15
CRS06
smd diode Lz zener
general purpose zener diode 256
CMZ24
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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marking code 62z
Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX
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HVD141/142
HZU16
HZU10
HZU18
HZU11
HZU20
HZU12
HZU22
HZU13
HZU24
marking code 62z
philips surface mount zener diode v6
marking 68m sot 23-5
1S2473 equivalent
DIODE ROHM 3pin Marking A7
IPS302
marking 62z SOT23
diode S4 68a
1ss81 diode equivalent
1S2473 DIODE equivalent
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 3 Unit in mm High Capacitance Ratio : C2 v / C 2 5 V = H -5 TYP. Low Series Resistance : rs = 0.55H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV283
0014g
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1SV283
Abstract: C25V
Text: TOSHIBA 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 8 3 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 11.5 TYP. • Low Series Resistance : rs = 0.550 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV283
C2y/C25V
0014g
000707EAA2'
1SV283
C25V
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27c diode toshiba
Abstract: 1SV283 847E C25V 6685E
Text: 1SV283 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 283 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 11.5 TYP. • Low Series Resistance : rs = 0.550 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV283
C2y/C25V
0014g
27c diode toshiba
1SV283
847E
C25V
6685E
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 CATV TUNING U nit in mm • High Capacitance Ratio : C 2V /C 25V —H-5 TYP. • Low Series Resistance • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner,
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1SV283
0014g
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Untitled
Abstract: No abstract text available
Text: 1SV283 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 28 3 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 11.5 TYP. • Low Series Resistance : rs = 0.550 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV283
C2V/C25V
0014g
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1SV283
Abstract: C25V
Text: TOSHIBA 1SV283 1 SV2 8 3 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C2V/C25V = 11.5 TYP. Low Series Resistance : rs = 0.550 (TYP.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV283
C2y/C25V
0014g
470MHz
C25V
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 283 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2v/C25V = H-5 TYP. Low Series Resistance : rs = 0.55H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV283
C2v/C25V
0014g
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Untitled
Abstract: No abstract text available
Text: 1SV283 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE 1SV 283 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C2V/C25V = 11.5 TYP. Low Series Resistance : rs = 0.550 (TYP.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV283
C2V/C25V
0014g
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