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    1V02 Search Results

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    1V02 Price and Stock

    Dinkle Enterprises EC381V-02P

    TERM BLK 2POS 3.81MM SCRW PLG
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    DigiKey EC381V-02P Bulk 3,800 200
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    Avnet Abacus EC381V-02P 20 Weeks 400
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    Wima MKP1V021005F00KSSD

    CAP FILM 10000PF 10% 2.5KVDC RAD
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    DigiKey MKP1V021005F00KSSD Bulk 3,212 1
    • 1 $1.7
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    Mouser Electronics MKP1V021005F00KSSD 531
    • 1 $1.7
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    TME MKP1V021005F00KSSD 2,000
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    Avnet Abacus MKP1V021005F00KSSD 14 Weeks 2,000
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    Littelfuse Inc 59135-1-V-02-A

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    DigiKey 59135-1-V-02-A Box 730 1
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    Mouser Electronics 59135-1-V-02-A 1,018
    • 1 $6.28
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    Littelfuse Inc 59140-1-V-02-A

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    DigiKey 59140-1-V-02-A Box 706 1
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    Mouser Electronics 59140-1-V-02-A 652
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    Newark 59140-1-V-02-A Bulk 479 1
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    TTI 59140-1-V-02-A Box 500
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    Littelfuse Inc 59145-1-V-02-A

    SENSOR REED SW SPST-NO W LEADS
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    DigiKey 59145-1-V-02-A Box 375 1
    • 1 $3.69
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    Mouser Electronics 59145-1-V-02-A 240
    • 1 $3.51
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    Newark 59145-1-V-02-A Bulk 500
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    Find more 1V02 price and stock on Findchips.com

    1V02 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1V020 NTE Electronics Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 33 V Original PDF
    1V025 NTE Electronics Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 39 V Original PDF

    1V02 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1V02H

    Abstract: HN1V02H
    Text: 1V02H 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1V02H ○ AM チューナ電子同調用 単位: mm • 容量変化比が大きい。 : C1V/C8V = 19.5 標準 • 性能指数が高い。 • 1 パッケージに 2 素子を内蔵しています。


    Original     		HN1V02H 1V02H HN1V02H PDF

    NTE74HC4067

    Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
    Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B


    Original     		NTE40175B NTE4017B NTE40182B NTE4018B NTE4001B NTE4019B NTE4001BT NTE40192B NTE4002B NTE40193B NTE74HC4067 NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165 PDF

    1V130

    Abstract: NTE1V095 2V130 1V025 NTE2V480 524V15 NTE524V13 524V13 1V150 NTE2V095
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


    Original     		NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 1V130 NTE1V095 2V130 1V025 NTE2V480 524V15 524V13 1V150 NTE2V095 PDF

    524V13

    Abstract: NTE524V13 524V15 524V25 2V025 1V130 2V130 varistor 150f NTE1V095 2V020
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


    Original     		NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 524V13 524V15 524V25 2V025 1V130 2V130 varistor 150f NTE1V095 2V020 PDF

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 PDF

    1V130

    Abstract: 320/20 METAL OXIDE VARISTOR NTE1V095 NTE524V13 524V13 524V25 1V300 2V025 2V130 524V15
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


    Original     		NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 1V130 320/20 METAL OXIDE VARISTOR NTE1V095 524V13 524V25 1V300 2V025 2V130 524V15 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


    Original     		NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 PDF

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 PDF

    ecg semiconductor replacement guide

    Abstract: ME 4946 ecg replacement guide ecg semiconductors replacement guide NTE Semiconductor Technical Guide and Cross Refer Fuse 250V 4a jet 392 laptop repairing guide 320/20 METAL OXIDE VARISTOR Jet 2A 250v fuse thermal-cutoff
    Text: Whatever your needs, NTE has the answer! ECG Aerosol Chemicals • Butane Fuel • Smoke Detector Tester Spray • Antistatic Circuit Refrigerants • Electronics Degreasers and Washes • Electronics Contact Cleaners, Degreasers and Washes • Electronics Contact Cleaners


    Original     		EL74-01 ecg semiconductor replacement guide ME 4946 ecg replacement guide ecg semiconductors replacement guide NTE Semiconductor Technical Guide and Cross Refer Fuse 250V 4a jet 392 laptop repairing guide 320/20 METAL OXIDE VARISTOR Jet 2A 250v fuse thermal-cutoff PDF

    524V13

    Abstract: 524V25 2V035
    Text: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.


    Original     		NTE1V010 NTE1V300 NTE2V010 NTEV480 NTE524V13 NTE524V48 524V13 524V25 2V035 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE H N 1V02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)


    OCR Scan     		HN1V02H PDF

    Untitled

    Abstract: No abstract text available
    Text: 1V02H T O SH IB A TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE H N 1V02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. . • • • High Capacitance Ratio : C IV / C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)


    OCR Scan     		HN1V02H PDF

    LA5607

    Abstract: VN02 EN4371
    Text: Ordering num ber: EN4371 Monolithic Linear 1C LA5607 No. 4371 BS/CS Tuner Regulator with Reset, On/Off Function Overview Package Dimensions The LA5607 is a low-dropout voltage regulator IC for BS/CS tuner applications, equipped with four regulators capable of ON/OFF control plus reset function.


    OCR Scan     		EN4371 LA5607 LA5607 VN02 EN4371 PDF

    1V02H

    Abstract: T23ff
    Text: ! • 1T 3 6 2 T O É : TV, 7 —— CATV ^ - + « ? | h IIM « f t : iS?'JffiKAS/J'àV'o rsSO. 65 f i • y - — y - - 0. 8 5 Q 1 2 .5 - + |B ]1 T O W f= 470MHz W $- (C 2/C 2 5 ) 1 T 3 6 5 « Ü y - - : BS ^ EH ¿S 30 2 V r r m (V ) 35 10 T o p r ( °C )


    OCR Scan     		470MHz) 470MKz) 1V01H 0HNIV02H T23ff| 1V02H 2V02H T23ff PDF

    varistor S14

    Abstract: ECG1V020 ECg2V250 ECG4934 ECG4902 varistor s14 385 Philips ECG ECG4950 diode s11 ECG2V030
    Text: PHI L IP S E C G INC S4E » • b b S B ^f l 0 Q Q 7 2 2 7 'IOS m Z Q G Overvoltage Transient Suppressors Metal Oxide Varistors M O V t Maximum Voltage RM S ECG Type ECG 1V010 vacm (Volts) 10 DC VDCM (Volts) Clamping VCL (Volts) 42 14 Nominal Varistor Voltage


    OCR Scan     		0Q072E? ECG1V010 ECG2V010 S11-2 ECG1V014 S11-1 ECG2V014 ECG1V015 varistor S14 ECG1V020 ECg2V250 ECG4934 ECG4902 varistor s14 385 Philips ECG ECG4950 diode s11 ECG2V030 PDF

    2N3980

    Abstract: No abstract text available
    Text: MO T O R O L A SC DIODES/O PTO I 35E D •.* b 3 k ? S 5 5 OOflOlOb ? ■ NOT RECOMMENDED FOR NEW DESIGNS I 2N3980 PN Unijunction Transistor Silicon Annular PN Unijunction Transistor . . . designed for military and industrial use in pulse, timing, sensing, and oscillator


    OCR Scan     		b3b7S55 2N3980 35inimum 2N3980 PDF