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    Alpine Electronics (Asia) Ltd RK09L1140C1X-359303

    POTEN (Alt: 359 303)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Abacus RK09L1140C1X-359303 143 Weeks 3,700
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    1X359 Datasheets Context Search

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    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    Untitled

    Abstract: No abstract text available
    Text: IBM13T2649JC 2M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency J Units j 3 jfcK I Clock Frequency j 100 j MHz ! jtcK


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    PDF IBM13T2649JC 2Mx64

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    Abstract: No abstract text available
    Text: IB M 1 3 T 1 6 4 9 N C Preliminary 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: I 10 CAS Latency 3 ! 12 j Units ! 3 jfcK I Clock Frequency


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    PDF 2Mx64 IBM13T1649NC 75H5936 GA14-4477-00

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    Abstract: No abstract text available
    Text: IBM11M32735B IBM11M32735C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s) - 4 Byte Interleave enabled - Buffered PDs


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    PDF IBM11M32735B IBM11M32735C 32Mx72

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    Abstract: No abstract text available
    Text: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM


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    PDF IBM11T4645MP IBM11T8645MP 4M/8Mx64 VSs/18VCc 104ns

    1X359

    Abstract: No abstract text available
    Text: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1 Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 tRAC ; RAS Access Tim e 60ns ; 70ns tcAC ! CAS Access Tim e 20ns ! 25ns W | Access Tim e From Address


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    PDF IBM11M1645L 1X359

    Untitled

    Abstract: No abstract text available
    Text: IBM13T2649NC 2M x 64 2 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: CAS Latency • • • • • • jfcK I Clock Frequency jtcK i Clock Cycle


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    PDF IBM13T2649NC 2Mx64 88H4961 A14-4480-00

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    Abstract: No abstract text available
    Text: IB M 1 1 M 8 6 4 5 H 8M x 64 D RAM M O D U LE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx64 Extended Data Out Mode DIMM • Optimized for ECC applications • System Performance Benefits: -Buffered inputs except RAS, Data


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    PDF 8Mx64 104ns IBM11M8645H 400mil

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    Abstract: No abstract text available
    Text: IBM11M16735B IBM11M16735C 16M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module • Optimized for ECC applications • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s)


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    PDF IBM11M16735B IBM11M16735C 168-Pin 16Mx72 104ns

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    Abstract: No abstract text available
    Text: IBM11N16645B IBM11N16735B IBM11N16645C IBM11N16735C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64, 16Mx72 Extended Data Out Page Mode DIMMs • Performance: -60 ! i^RAC ! R A S Access Tim e


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    PDF IBM11N16645B IBM11N16735B IBM11N16645C IBM11N16735C 16Mx64, 16Mx72 104ns

    Untitled

    Abstract: No abstract text available
    Text: IBM11N32645B IBM11N32735B IBM11N32645C IBM11N32735C 32M x 64/72 DRAM Module Features • 168-Pin JEDEC-Standard Unbuffered 8-Byte Dual In-Line Memory Module • 32Mx64, 32Mx72 Dual Bank Extended Data Out Page Mode DIMMs • Performance: • System Performance Benefits:


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    PDF IBM11N32645B IBM11N32735B IBM11N32645C IBM11N32735C 168-Pin 32Mx64, 32Mx72 104ns

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    Abstract: No abstract text available
    Text: IBM11M16735B IBM11M16735C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/Vcc P^s) - Buffered PDs • 16Mx72 Extended Data Out (EDO) Mode


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    PDF IBM11M16735B IBM11M16735C 16Mx72 104ns

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    Abstract: No abstract text available
    Text: IBM11M32730B IBM11M32730C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 32Mx72 Dual Bank Fast Page Mode DIMM • Performance: • System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 VSs/V cc P^s)


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    PDF IBM11M32730B IBM11M32730C 32Mx72 110ns 400mil

    ix335

    Abstract: No abstract text available
    Text: I =¥= = = = ’= IBM13N16644HC IBM13N16734HC P relim inary 16M x 64/72 2 Bank U nbuffered SDRAM M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only


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    PDF IBM13N16644HC IBM13N16734HC 168-Pin 16Mx64/72 ix335

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 M 4 7 3 5 H B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 4Mx72 Dual Bank EDO Mode DIMM • System Performance Benefits: • Performance: -Buffered inputs (except RAS, Data)


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    PDF 4Mx72 11M4735HB

    Untitled

    Abstract: No abstract text available
    Text: IBM11N8645H IBM11N8735H 8M x 64/72 D RAM M O D U LE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity, or ECC applications • 8Mx64, 8Mx72 Extended Data Out Page Mode DIMMs System Performance Benefits:


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    PDF IBM11N8645H IBM11N8735H 8Mx64, 8Mx72 11N8645H 11N8735H 400mil

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    Abstract: No abstract text available
    Text: I = = = = ¥ = = = ’ = IB M 1 3 N 8 6 4 4 H C IB M 1 3 N 8 7 3 4 H C P relim inary 8M x 64/72 1 B ank U nbuffered S D R A M M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only


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    PDF 168-Pin 8Mx64/72

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    Abstract: No abstract text available
    Text: I = = = = ¥ = IB M 1 3 N 8 6 4 4 H C = IB M 1 3 N 8 7 3 4 H C = ’ = P relim inary 8M x 64/72 1 B ank U nbuffered S D R A M M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only


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    PDF 168-Pin 8Mx64/72 L7122. IBM13N8644HC IBM13N8734HC