c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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Untitled
Abstract: No abstract text available
Text: IBM13T2649JC 2M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency J Units j 3 jfcK I Clock Frequency j 100 j MHz ! jtcK
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IBM13T2649JC
2Mx64
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Untitled
Abstract: No abstract text available
Text: IB M 1 3 T 1 6 4 9 N C Preliminary 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: I 10 CAS Latency 3 ! 12 j Units ! 3 jfcK I Clock Frequency
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2Mx64
IBM13T1649NC
75H5936
GA14-4477-00
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Untitled
Abstract: No abstract text available
Text: IBM11M32735B IBM11M32735C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s) - 4 Byte Interleave enabled - Buffered PDs
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IBM11M32735B
IBM11M32735C
32Mx72
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Untitled
Abstract: No abstract text available
Text: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM
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IBM11T4645MP
IBM11T8645MP
4M/8Mx64
VSs/18VCc
104ns
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1X359
Abstract: No abstract text available
Text: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1 Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 tRAC ; RAS Access Tim e 60ns ; 70ns tcAC ! CAS Access Tim e 20ns ! 25ns W | Access Tim e From Address
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IBM11M1645L
1X359
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Untitled
Abstract: No abstract text available
Text: IBM13T2649NC 2M x 64 2 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: CAS Latency • • • • • • jfcK I Clock Frequency jtcK i Clock Cycle
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IBM13T2649NC
2Mx64
88H4961
A14-4480-00
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 8 6 4 5 H 8M x 64 D RAM M O D U LE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx64 Extended Data Out Mode DIMM • Optimized for ECC applications • System Performance Benefits: -Buffered inputs except RAS, Data
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8Mx64
104ns
IBM11M8645H
400mil
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Untitled
Abstract: No abstract text available
Text: IBM11M16735B IBM11M16735C 16M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module • Optimized for ECC applications • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s)
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IBM11M16735B
IBM11M16735C
168-Pin
16Mx72
104ns
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Untitled
Abstract: No abstract text available
Text: IBM11N16645B IBM11N16735B IBM11N16645C IBM11N16735C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64, 16Mx72 Extended Data Out Page Mode DIMMs • Performance: -60 ! i^RAC ! R A S Access Tim e
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IBM11N16645B
IBM11N16735B
IBM11N16645C
IBM11N16735C
16Mx64,
16Mx72
104ns
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Untitled
Abstract: No abstract text available
Text: IBM11N32645B IBM11N32735B IBM11N32645C IBM11N32735C 32M x 64/72 DRAM Module Features • 168-Pin JEDEC-Standard Unbuffered 8-Byte Dual In-Line Memory Module • 32Mx64, 32Mx72 Dual Bank Extended Data Out Page Mode DIMMs • Performance: • System Performance Benefits:
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IBM11N32645B
IBM11N32735B
IBM11N32645C
IBM11N32735C
168-Pin
32Mx64,
32Mx72
104ns
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Untitled
Abstract: No abstract text available
Text: IBM11M16735B IBM11M16735C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/Vcc P^s) - Buffered PDs • 16Mx72 Extended Data Out (EDO) Mode
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IBM11M16735B
IBM11M16735C
16Mx72
104ns
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Untitled
Abstract: No abstract text available
Text: IBM11M32730B IBM11M32730C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 32Mx72 Dual Bank Fast Page Mode DIMM • Performance: • System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 VSs/V cc P^s)
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IBM11M32730B
IBM11M32730C
32Mx72
110ns
400mil
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ix335
Abstract: No abstract text available
Text: I =¥= = = = ’= IBM13N16644HC IBM13N16734HC P relim inary 16M x 64/72 2 Bank U nbuffered SDRAM M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only
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IBM13N16644HC
IBM13N16734HC
168-Pin
16Mx64/72
ix335
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 4 7 3 5 H B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 4Mx72 Dual Bank EDO Mode DIMM • System Performance Benefits: • Performance: -Buffered inputs (except RAS, Data)
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4Mx72
11M4735HB
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Untitled
Abstract: No abstract text available
Text: IBM11N8645H IBM11N8735H 8M x 64/72 D RAM M O D U LE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity, or ECC applications • 8Mx64, 8Mx72 Extended Data Out Page Mode DIMMs System Performance Benefits:
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IBM11N8645H
IBM11N8735H
8Mx64,
8Mx72
11N8645H
11N8735H
400mil
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Untitled
Abstract: No abstract text available
Text: I = = = = ¥ = = = ’ = IB M 1 3 N 8 6 4 4 H C IB M 1 3 N 8 7 3 4 H C P relim inary 8M x 64/72 1 B ank U nbuffered S D R A M M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only
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168-Pin
8Mx64/72
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Untitled
Abstract: No abstract text available
Text: I = = = = ¥ = IB M 1 3 N 8 6 4 4 H C = IB M 1 3 N 8 7 3 4 H C = ’ = P relim inary 8M x 64/72 1 B ank U nbuffered S D R A M M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only
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168-Pin
8Mx64/72
L7122.
IBM13N8644HC
IBM13N8734HC
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