siemens MKL
Abstract: 210895 B32110f 1.50 MKT - 2200PF - 630V b32110d B32110-F B32110-E B32110 B31531 mkl siemens
Text: Partnerschaft mit Siemens RS Components bietet durch eine vertiefte Zusammenarbeit mit Siemens Passive Bauelemente und Röhren eine besondere Dienstleistung an: Als offizieller Schwerpunkthändler liefern wir unseren Kunden alle 2 600 Produkte aus dem Siemens Bauteile Service Katalog SBS-Buch .
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yageo Phycomp 2238
Abstract: Phycomp Components 2238 2238 yageo Phycomp Components PHYCOMP 2222 YAGEO C0603 X7R yageo 2255 Phycomp c0603 PHYCOMP 2222 580 phycomp capacitors X7R 1206 2238
Text: DISCRETE CERAMICS DATA SHEET Class 2, X5R/X7R High Capacitance 6.3V to 50V, 68 nF to 47 µF Surface mount ceramic multilayer capacitor Product specification VPSG_4 august 2002 Phycomp Components Product specification Surface mount ceramic Multilayer capacitor
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nF-47
68nF-22
68nF-4
68nF-1
yageo Phycomp 2238
Phycomp Components 2238
2238 yageo
Phycomp Components
PHYCOMP 2222
YAGEO C0603 X7R
yageo 2255
Phycomp c0603
PHYCOMP 2222 580
phycomp capacitors X7R 1206 2238
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epcos ceramic capacitor
Abstract: 222 S capacitor date code capacitor
Text: Multilayer Ceramic Capacitor X7R Feedthru Capacitor Case Size 1206 X7R / 1206 / 50V B37872U5222S011 Data Sheet Description The design of EPCOS Feedthru capacitors provides excellent performance for EMI suppression and signal filtering. One typical application is the protection of signal sensor lines, e.g. for hall sensors, in
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B37872U5222S011
epcos ceramic capacitor
222 S capacitor
date code capacitor
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siemens spc 2
Abstract: SIEMENS MICROWAVE RADIO SIEMENS MICROWAVE RADIO 8 GHz microwave transistor siemens MSC Microwave x-band mmic lna "Microwave Diodes" Microwave GaAs FET micro x MMIC Amplifier Micro-X marking D CFY67
Text: HiRel Discrete and HiRel Microwave Semiconductors 1. Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Siemens. Full data sheets are also given in our HiRel Discrete and Microwave Semiconductors Data Book which is currently under generation August 1998 . They are
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de/semiconductor/products/35/35
de/semiconductor/products/35/353
MWP-25
MWP-35
siemens spc 2
SIEMENS MICROWAVE RADIO
SIEMENS MICROWAVE RADIO 8 GHz
microwave transistor siemens
MSC Microwave
x-band mmic lna
"Microwave Diodes"
Microwave GaAs FET micro x
MMIC Amplifier Micro-X marking D
CFY67
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teapo xg-vs
Abstract: 1000uf, 25v electrolytic capacitor teapo xg-vs 250v 10nF 63V Polyester or Ceramic Capacitor 1000uF 25V capacitor Philips Electrolytic Capacitor 400v philips capacitor 47 uF 400V WIMA MKc 4 1000uf 63V electrolytic capacitor ELECTROLYTIC CAPACITORS 220uF 25V
Text: NOVA Elektronik GmbH: Comp-Cards -System / Capacitors Aluminium Electrolytic Capacitors CCC-13 1 Flap FL16/20 16 Values / 270 Pieces Cylindrical Aluminium-Can with radial leads Type/Brand: RSM 2222 037 xxxxx / PHILIPS ±20% Tolerance: Temperature: -40 to +85°C
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CCC-13
FL16/20)
uF/63V
uF/50V
100uF/63V
1000uF/16V
uF/25V
220uF/35V
1000uF/35V
teapo xg-vs
1000uf, 25v electrolytic capacitor
teapo xg-vs 250v
10nF 63V Polyester or Ceramic Capacitor
1000uF 25V capacitor
Philips Electrolytic Capacitor 400v
philips capacitor 47 uF 400V
WIMA MKc 4
1000uf 63V electrolytic capacitor
ELECTROLYTIC CAPACITORS 220uF 25V
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SIEMENS MICROWAVE RADIO 8 GHz
Abstract: gaas fet micro-X Package marking BAS70B-HP x-band power transistor x-band mmic lna CGY40 MMIC Amplifier Micro-X marking D MSC Microwave gaas fet micro-X Package INFINEON PART MARKING
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
SIEMENS MICROWAVE RADIO 8 GHz
gaas fet micro-X Package marking
BAS70B-HP
x-band power transistor
x-band mmic lna
CGY40
MMIC Amplifier Micro-X marking D
MSC Microwave
gaas fet micro-X Package
INFINEON PART MARKING
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microwave transistor bfy193
Abstract: BFY193 Micro-X marking "Fp" GaAs Amplifier Micro-X Marking k BAS40 BFY180 BFY405 BXY42 CFY25 micro-x 420
Text: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview HiRel DISCRETE & MICROWAVE SEMICONDUCTORS INTRODUCTION AND TYPE OVERVIEW HiRel Discrete and Microwave Semiconductors from Infineon Technologies AG December 1999 Product Marketing: Infineon Technologies AG
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MWP-25
MWP-35
microwave transistor bfy193
BFY193
Micro-X marking "Fp"
GaAs Amplifier Micro-X Marking k
BAS40
BFY180
BFY405
BXY42
CFY25
micro-x 420
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4532m
Abstract: capacitor 100nf 100v 0603 x7r 0603 KR X7R 9BB 1812 footprint 1206 X7R 104 1812 footprint dimension 0805 X7R 104 capacitor 100 nf phycomp capacitors X7R inductor 1812 footprint dimension
Text: DISCRETE CERAMICS X2Y series Surface mount EMI filter component June 2002 Rev 6 X2Y - series Surface-mount ceramic EMI filter Product specification www.yageo.com 2002 July 26 v1.07 Product specification Phycomp Surface-mount ceramic EMI filter Table of Contents
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capacitor poliester 100nf
Abstract: CAPACITOR 5D 3KV 5d 3kv kje y4 capacitor 100nF poliester Thomson csf ceramic capacitor IEC-384-9 capacitor poliester 10nf Carimbo ceramic capacitor 5OQ322MAEAA
Text: Contents Page • Selection Guide 02 • Manufacturing process 03/04 • General specifications 05 • Temperature Coefficient curves 06 • Packaging 07 TPCAM0198 • Marking 08 • Taping specifications 09/10 • How to order 11/12 • Class I and SL specifications
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TPCAM0198
5OKB10
B-1050
capacitor poliester 100nf
CAPACITOR 5D 3KV
5d 3kv
kje y4
capacitor 100nF poliester
Thomson csf ceramic capacitor
IEC-384-9
capacitor poliester 10nf
Carimbo ceramic capacitor
5OQ322MAEAA
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V23990-P622-F64-01-14
Abstract: No abstract text available
Text: V23990-P622-F64-PM final data sheet flow0 V23990-P622-F64-01-14 Maximum Ratings Parameter P622-F64 600V/30A Condition Symbol Datasheet values Unit max. Transistor H-bridge MOSFET Drain to source voltage 600 V Id 25 A Idpuls 115 A Pulsed drain current Tj=25°C
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V23990-P622-F64-PM
V23990-P622-F64-01-14
P622-F64
00V/30A
V23990-P622F64
V23990-P622-F64-01-14
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mosfet power inverter
Abstract: No abstract text available
Text: V23990-P622-F74-PM final data sheet flow0 V23990-P622-F74-01-14 Maximum Ratings Parameter P622-F74 600V/30A Condition Symbol Datasheet values Unit max. Transistor H-bridge MOSFET Drain to source voltage 600 V Id 32 A Idpuls 115 A Pulsed drain current Tj=25°C
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V23990-P622-F74-PM
V23990-P622-F74-01-14
P622-F74
00V/30A
V23990-P622F74
mosfet power inverter
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diode hp 2900
Abstract: PBL 386 15/1 SHT 1N4448
Text: March 2000 PBL 386 30/2 Subscriber Line Interface Circuit Description Key Features The PBL 386 30/2 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecommunications equipment.
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2x900
2x30k.
30/2SOS
30/2SOT
30/2QNS
30/2QNT
diode hp 2900
PBL 386 15/1 SHT
1N4448
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V23990-P722-F64-PM
Abstract: No abstract text available
Text: V23990-P722-F64-PM final data sheet fastPACK 0 H 2nd gen Maximum Ratings / Höchstzulässige Werte Parameter Condition V23990-P722-F64-01-14 P722-F64 600V/30A Symbol Datasheet values Unit max. DC link Capacitor TC=25°C Max.DC voltage UMAX 500 V Vbr 600 V
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V23990-P722-F64-PM
V23990-P722-F64-01-14
P722-F64
00V/30A
64-PM
V23990-P722-F64
V23990-P722-F64-PM
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Untitled
Abstract: No abstract text available
Text: May 1999 PBL 386 30/2 Subscriber Line Interface Circuit Description The PBL 386 30/2 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecommunications equipment. The PBL 386 30/2 has been optimized for low total line interface cost and a high
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2x900
2x30k.
1522-PBL
SE-164
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Ericsson radio relay
Abstract: No abstract text available
Text: Preliminary October 1997 PBL 386 65/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 65/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in DLC, Central Office and other telecommunications equipment. The
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2x900
1522-PBL
S-164
Ericsson radio relay
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Untitled
Abstract: No abstract text available
Text: TQP3M9005 LNA Gain Block Applications • • • • Repeaters Mobile Infrastructure LTE / WCDMA General Purpose Wireless 16-pin 3x3 QFN package Product Features • • • • • • • • • • Functional Block Diagram 50-4000 MHz 15.3 dB Gain @ 1.9 GHz
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TQP3M9005
16-pin
TQP3M9005
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VEB mikroelektronik
Abstract: mikroelektronik DDR Widerstandsnetzwerke aus dem Kombinat Keramische Werke Hermsdorf VEB Keramische Werke keramische Werke Hermsdorf hermsdorf keramische Werke Hermsdorf 3677 Deutschen Demokratischen Republik Kombinat VEB Keramische Werke DDR Schaltkreise
Text: Widerstandsnetzwerke ProduktUbersicht Resistor Networks Products catalog Die vorgestellte Typenauswahl stellt einen Querschnitt unseres umfangreichen Sorti ments dar. Die verbindlichen Angaben zu den aufgeführten und weiteren Typen kön nen unseren „Technischen Lieferbedingun
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WV/6/1-10
VEB mikroelektronik
mikroelektronik DDR
Widerstandsnetzwerke aus dem Kombinat Keramische Werke Hermsdorf
VEB Keramische Werke
keramische Werke Hermsdorf
hermsdorf
keramische Werke Hermsdorf 3677
Deutschen Demokratischen Republik
Kombinat VEB Keramische Werke
DDR Schaltkreise
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EUROFARAD capacitor
Abstract: EUROFARAD 470
Text: // "Data âÂeet 0?¿eÁe technique TCN 263 / 264 / 265 / 266 CONDENSATEUR CERAMIQUE // CERAMIC CAPACITOR TECHNOLOGY TECHNOLOGIE - Diélectrique : Céramique Haute température classe 2 Dielectric : High temperature class 2 Ceramic - Condensateurs Céramique Multicouche auto-protégé
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philips blx15
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:
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BLX15
7Z67664
philips blx15
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Untitled
Abstract: No abstract text available
Text: Roederstein Tantalum Capacitors Dipped 43 Tantalum Electrolytic Capacitors Sintered Anode, Solid Sem iconductor Electrolyte, +125°C Tantalum capacitors with sintered anode arid solid semiconductor electrolyte, with flame retardant fluidized bed coating. The ETPW type is an ideal component
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valvo handbuch rohren
Abstract: VALVO Handbuch 6922 EH valvo E288CC E81L E180F VALVO GMBH E130L E186F
Text: VAIVO HANDBUCH S pezial-V erstärkerröhren 1970 S p e z ia l - V e r s tä r k e r r ö h r e n 1970 D a s V A L V O - H a n d b u c h ist v o r a lle m fü r K o n s tru k te u re und G e r ä t e e n t w ic k le r bestim m t. D a s H a n d b u c h g ib t k e in e A u s k u n ft ü b e r d ie L ie fe rm ö g lich k eit'
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roederstein tantalum
Abstract: 70511 roederstein capacitor tantalum Roederstein ZR4040-2.5 LM136-2.5
Text: VI SH AY INTER / R O E D E R S T E I N b2E D • 7fl21b24 O G ü n ß b lOfl ■ Tantalum Electrolytic Capacitors Sintered Anode, Solid Semiconductor Electrolyte, +125°C Tantalum capacitors with sintered anode and solid semiconductor electrolyte, with flame retardant fluidized bed coating.
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7fl21b24
roederstein tantalum
70511
roederstein capacitor tantalum
Roederstein
ZR4040-2.5
LM136-2.5
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transistor itt 975
Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz
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BLX15
transistor itt 975
BLX15
philips blx15
BY206
blx15 push pull
hie bd135
PHILIPS 4312 amplifier
Philips Application BLX15
TRANSISTOR blx15
4312 020 36640
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44358
Abstract: 107603 roederstein etqw capacitor tantalum ETQW 002D10 3G2216 Roederstein ELECTROLYTIC CAPACITOR tantalum roederstein tantalum ETQW1 68503
Text: VISHAY INTER/ ROEDERSTEIN b2E D • 7821^24 O Q O m L i D57 Tantalum Electrolytic Capacitor Sindered Anode, Solid Semiconductor Electrolyte, -125 C Tantalum capacitors with sintered anode and solid semiconductor electrolyte with flame retardant fluidized bed coating.
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7fl21b24
44358
107603
roederstein etqw capacitor tantalum
ETQW
002D10
3G2216
Roederstein ELECTROLYTIC CAPACITOR tantalum
roederstein tantalum
ETQW1
68503
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