ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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F-91742
ss8050 d 331
tip122 tip127 mosfet audio amp
KSD180
KA1M0880 application note
SS8550 D 331
dual cc BAW62
KA2S0680
ss8550 sot-23
MPSA92(KSP92) equivalent
DIODE 1N4148 LL-34
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MJE305
Abstract: MJE30*T MJE2955T MJE3055T
Text: Inchange Semiconductor Product Specification MJE2955T Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type MJE3055T ・DC current gain -hFE = 20–70 @ IC = -4 Adc ・Collector–emitter saturation voltage VCE sat = -1.1 Vdc (Max) @ IC =- 4 Adc
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MJE2955T
O-220
MJE3055T
O-220)
MJE305
MJE30*T
MJE2955T
MJE3055T
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD MJE3055T NPN SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Lead-free: MJE3055TL Halogen-free: MJE3055TG ̈ ORDERI N G I N FORM AT I ON
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MJE3055T
MJE3055T
MJE3055TL
MJE3055TG
MJE3055T-TA3-T
MJE3055T-TM3-T
MJE3055T-TN3-R
MJE3055TL-TA3-T
MJE3055TL-TM3-T
MJE3055TL-TN3-R
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Untitled
Abstract: No abstract text available
Text: MJE2955T PNP , MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • High Current Gain − Bandwidth Product
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MJE2955T
MJE3055T
MJE2955T/D
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MJE3055
Abstract: transistor MJE3055 20100G
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components MJE3055 Features • NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates
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MJE3055
-55OC
O-220
MJE3055
transistor MJE3055
20100G
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pnp mje2955t
Abstract: MJE3055T MJE2955T
Text: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes
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MJE2955T
MJE3055T
r14525
MJE2955T/D
pnp mje2955t
MJE3055T
MJE2955T
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mje2955t
Abstract: mje3055t MJE2955TG MJE305 MJE30*T transistor MJE3055T
Text: MJE2955T PNP MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • DC Current Gain Specified to 10 A
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MJE2955T
MJE3055T
MJE2955T/D
mje2955t
mje3055t
MJE2955TG
MJE305
MJE30*T
transistor MJE3055T
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Untitled
Abstract: No abstract text available
Text: MJE2955T PNP MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS • DC Current Gain Specified to 10 A
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MJE2955T
MJE3055T
MJE2955T/D
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MJE3055TG
Abstract: MJE2955TG MJE2955T MJE3055T AN415A MJE3055 MJE305
Text: MJE2955T PNP MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS
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MJE2955T
MJE3055T
MJE2955T/D
MJE3055TG
MJE2955TG
MJE2955T
MJE3055T
AN415A
MJE3055
MJE305
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MJE2955TG
Abstract: mje3055t
Text: MJE2955T PNP MJE3055T (NPN) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. Features http://onsemi.com 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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MJE2955T
MJE3055T
-55licable
MJE2955T/D
MJE2955TG
mje3055t
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MJE30*T
Abstract: MJE2955T transistor MJE3055T MJE3055T
Text: Ill MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera^ Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D E F G H J K L M N MIN 14.42 9,63
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MJE2955T,
MJE3055T
MJE2955T
MJE3055T
MJE30*T
transistor MJE3055T
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T1P42C
Abstract: bd534j T1P102
Text: TO-220 PIN CO N FIG U R ATIO N 1. B A S E 2. C O L L E C T O R 3. EM ITTER 4. C O L L E C T O R c ,01 0 -I MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 DIM E A B C D E F G H J K L M N 3 G - 1,15 3,75 2,29 2,54 12,70
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O-220
O-220
TIP125
TIP126
TIP127
TIP135
TIP136
T1P42C
bd534j
T1P102
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T1P42C
Abstract: No abstract text available
Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN
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O-220
O-220
O-237-2
00014QÃ
T1P42C
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E3055T
Abstract: E2955T e3055 E2955T-MJ E2955T-MJE3055T e2955
Text: r z T SGS-THOMSON Ä 7 # RSD lS S l[LliSTl^©iBOi MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is intended for power switching circuits and
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MJE2955T
MJE3055T
MJE3055T
T0-220
MJE2955T.
E3055T
E2955T
e3055
E2955T-MJ
E2955T-MJE3055T
e2955
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Untitled
Abstract: No abstract text available
Text: rz 7 Ä T# SGS-THOMSON MJE2955T MJE3055T [MO gfô l[L[iera®*S COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is
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OCR Scan
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MJE2955T
MJE3055T
MJE3055T
O-220
MJE2955T.
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Untitled
Abstract: No abstract text available
Text: MJD2955 MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS . STM PREFERRED SALESTYPES . SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) . ELECTRICAL SIMILAR TO MJE2955 AND MJE3055 APPLICATIONS . GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS
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MJD2955
MJD3055
O-252
MJE2955
MJE3055
O-252
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mje3055
Abstract: mje3055 data MJE3055K 2 N MJE3055 transistor MJE3055 MJE3055 TO-126 CASE 90-05 MJE2955K "case 90-05" 1511 BA
Text: MJE3055 SILICON MJE3055K 10 AMPERE POWER TRANSISTORS HIGH POWER NPN SILICON TRANSISTORS . . . designed for use m general-purpose amplifier and switching applitions. NPN SILICON 6 0 VOLTS 90 WATTS • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product —
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MJE3055
MJE3055K
MJE2955,
MJE2955K
MJE3055
MJE3055K
MJE30S6,
TC-28Â
mje3055 data
2 N MJE3055
transistor MJE3055
MJE3055 TO-126
CASE 90-05
MJE2955K
"case 90-05"
1511 BA
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JE2955
Abstract: JE3055 mje3055 127 case data MJE295ST MJE2955 JE2955T JE3055T lm 3904 2955T TO-225AB
Text: MOTOROLA SC 12E 0 | L3b7HS4 □Qâ53Mc1 1 | XSTRS/R F r-3 3 - 5 PN P MOTOROLA r - î î - a i MJE2955, MIE2955T SEMICONDUCTOR NPN TECHNICAL DATA MJE3055, MJE3055T 10 A M P E R E COM PLEM ENTARY SILICO N PLASTIC POWER TRAN SISTO RS . . . designed for use in general-purpose amplifier and switching
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MJE2955,
MIE2955T
MJE3055,
MJE3055T
JE3055,
JE2955
O-225AB
JE3055T
2955T
O-22QAB
JE3055
mje3055 127 case data
MJE295ST
MJE2955
JE2955T
JE3055T
lm 3904
TO-225AB
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 1 14E D I 7 % ^ ^ 0007710 I : t - MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AN6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High C urrent Gain-Bandwidth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (T«=25°C)
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MJE3055T
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PDF
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MJE3055T
Abstract: No abstract text available
Text: MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High Current G ain-Bandwidth Product f j = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector Base Voltage C ollector-E m itter Voltage
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MJE3055T
200mA,
30rial
MJE3055T
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PDF
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Untitled
Abstract: No abstract text available
Text: r Z Z SGS-THOMSON & *im iO T iO gS MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor In Jedec TO-220 package. It is
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MJE2955T
MJE3055T
MJE3055T
O-220
MJE2955T.
O-220
C08B1C
SC0696C
300ns,
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PDF
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TIP298
Abstract: TIP29 Pj-3000 LE33A OF TRANSISTOR tip30 tip30c TLP298 MJE3055T TIP29A T1P30
Text: SAMSUNG SEMICONDUCTOR 14E D INC I 7^4142 0007710 t ' : - 0 | 33- 3 NPN SILICON TRANSISTOR MJE3055T GENERAL PURPOSE ANÓ SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Gain-Bandwidth Product (t TO-220 = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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MJE3055T
O-220
T-33-n
Uj-5000
Pj-3000
g-1000
T1P30
-HP30A
-HP30B
-T1P30C
TIP298
TIP29
Pj-3000
LE33A
OF TRANSISTOR tip30
tip30c
TLP298
MJE3055T
TIP29A
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Untitled
Abstract: No abstract text available
Text: MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High C urrent G ain-Bandw idth Product f j = 2kHz (MIN ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic V cbO
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MJE3055T
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MJE3055
Abstract: KSH3055 Q02S transistor MJE3055 MJE3055 TO-225
Text: KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I.PACK, I ” Suffix) • Electrically Similar to Popular MJE3055
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KSH3055
MJE3055
500mA
500mA
500KHz
Q02S572
7tb4142
MJE3055
Q02S
transistor MJE3055
MJE3055 TO-225
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