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    2 TRANSISTOR Search Results

    2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    2 TRANSISTOR Price and Stock

    TE Connectivity 2-1437504-9

    8080-1G1=TRANSISTOR SOCKET ASS
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    TE Connectivity 3-1437504-2

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    TE Connectivity 6-6437504-2

    Conn Transistor Socket SKT 3 POS Solder ST Thru-Hole
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    TE Connectivity 4-1437504-2

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    TE Connectivity 2-1437504-6

    Conn Transistor Socket SKT 3 POS Solder ST Thru-Hole
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    2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor array high frequency

    Abstract: hfa11001 transistor 2620 SOT-23 EL5308 CA3083 receiver EL5611 EL8188 EL8203
    Text: Amplifiers/Buffers 2 A NALOG S IGNAL P ROCESSING Low Power pg. 2-27 Transistor Arrays (pg. 2-41) Bandwidth >1GHz (pg. 2-2) VOS <25µV (pg. 2-15) IS <10µA (pg. 2-27) UHF NPN Only (pg. 2-41) Bandwidth >500MHz (pg. 2-2) VOS <100µV (pg. 2-15) IS <100µA


    Original     		500MHz 100MHz 10MHz HA-4900 HA-4902 HA-4905 150nA, 200nA, 180ns transistor array high frequency hfa11001 transistor 2620 SOT-23 EL5308 CA3083 receiver EL5611 EL8188 EL8203 PDF

    E6327

    Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
    Text: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!


    Original     		OT-343 O-220-3-1 O-220-2-2 OT-89 OT-23 OT-23 OT-89 OT-343 SC-74 SC-79 E6327 transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327 PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 85 MH 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 85 MH 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2


    Original     		85MH10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 25C D • öBBSbQS GQGMßflQ 2 H S I E G - 7 ^ -3 5 '-/^ NPN Silicon Planar Transistors 2 N 2218 2 N 2219 -SIEMENS AKTIENGESELLSCHAF- 2 N 2218 A 2 IM2219 A 2 N 2 2 1 8 ,2 N 2 2 1 9 ,2 N 2 2 1 8 A, and 2 N 2 2 1 9 A a re epitaxial NPN silicon Planartransistors


    OCR Scan     		IM2219 fl23SbOS 102mA PDF

    2sk303

    Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
    Text: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4


    OCR Scan     		2SA1256 2SA1343 2SA1655 2SK2167 2SK2168 2SK2170 2SK2171 2SK2260 2SK2218 2SK2219 2sk303 2SK283 sk184 SK174 2SK436 2SK848 P/N146071 2sd22 PDF

    Untitled

    Abstract: No abstract text available
    Text: 30E D *57 6 S • T 'i S 'I S a ? G 031115 S C S -T H O M S O N H L U m *! 3 ■ 2 N 2 2 1 8 A -2 N 2 2 1 9 A 2 N 2 2 2 1 A -2 N 2 2 2 2 A S-THOMSON H IG H SP EE D SWITCHES DESC RIPTIO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec


    OCR Scan     		2N2218A, 2N2219A, 2N2221A 2N2222A 2N2218A 2N2219A) 2N2222A) 2N2218A/2N2219A 2N2221A/2N2222A PDF

    N2222A

    Abstract: PW 2N 218A n2222a2 2N2219A ip 2222A
    Text: S G S -T H O M S O N 2 N 2 2 1 8 A -2 N 2 2 1 9 A R fflD is œ iL iO ÏÏM iD g i 2 N 2 2 2 1 A -2 N 2 2 2 2 A HIGH SPEED SWITCHES D E S C R IP T IO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218A and 2N2219A and in Jedec


    OCR Scan     		2N2218A, 2N2219A, 2N2221A 2N2222A 2N2218A 2N2219A) 2N2222A) 2N2218A/2N2219A 2N2221A/2N2222A N2222A PW 2N 218A n2222a2 2N2219A ip 2222A PDF

    A 933 S transistors

    Abstract: N 2222 2N222 2221-2N TE 2221
    Text: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 NPN Silicon Planar Transistors D 2 N 2220 2 N 2221 2 N 2222 ' S I E M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial N P N silicon planar transistors in TO 18 case 18 A 3 D IN 41 876 . The collector is electrically connected to the case. The transistors


    OCR Scan     		CK886 A 933 S transistors N 2222 2N222 2221-2N TE 2221 PDF

    RXT2907A

    Abstract: marking R2F MMST2907A PN2907A SST2907A T106 T110 UMT2907A transistor Marking code t03 Part marking SC70 bc
    Text: Transistors PNP Medium Power Transistor Switching i UM T2907A / SST2907A/M M ST2907A / RXT2907A / PN2907A 0 F e a tu re s # E x te rn a l dimensions (Units : mm) 1 ) B V ceo C —4 0 V ( l c = — 10m A ) UMT2907A 2 ) C o m p le m e n ts the U M T 2 2 2 2 A /S S T 2 2 2 2 A /M M S T 2 2 2 2 A /


    OCR Scan     		UMT2907A SST2907A/MMST2907A RXT2907A PN2907A UMT2Z2ZA/SST2222A/MMST2222 RXT2222A/PN2222A. SST2907A MMST2907A marking R2F PN2907A T106 T110 transistor Marking code t03 Part marking SC70 bc PDF

    A 933 S transistors

    Abstract: br 2222 npn npn 2222 N 2222 2221-2N 2N2222 2N2221 Q62702-F134 Q62702-F135 Q68000-A4573
    Text: 2SC D • 6 2 3 S b O S GDGHflflb 3 H S I E < S Z 5C CK886 D NPN Silicon Planar Transistors 2 N 2220 2 N 2221 2 N 2222 'S IE M E N S AKTIENGESELLSCHAF 2 N 2 2 2 0 , 2 N 2221, and 2 N 2 2 2 2 are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41 8 7 6 . The collector is electrically connected to the case. The transistors


    OCR Scan     		623SbOS CK886 Q68000-A4573 Q62702-F134 Q62702-F135 A 933 S transistors br 2222 npn npn 2222 N 2222 2221-2N 2N2222 2N2221 Q62702-F134 Q62702-F135 Q68000-A4573 PDF

    B0415

    Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
    Text: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2


    OCR Scan     		BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063 PDF

    d1189f

    Abstract: 2SB891 d1758 2SB891F 2sb1188 2sb1277
    Text: Transistors Medium power Transistor -32V, -2A 2 S B 1 1 8 8 /2 S B 1 1 8 2 /2 S B 1 2 4 0 /2 S B 8 9 1 F / 2 S B 8 2 2 /2 S B 1 2 7 7 /2 S B 9 1 1 M •F e a tu re s 1) ^External dim ensions (Units: m m ) LOW VcE(sat). 2SB1188 VcElsat; = —0 .5 V (Typ.)


    OCR Scan     		2SB1188 2SB1182 2SB1188) 2SB1182) 2SB891) 2SB1188/2SB1182/2SB1240/2SB891F/ 2SB822/2SB1277/2SB911M 2SB891 d1189f 2SB891 d1758 2SB891F 2sb1188 2sb1277 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 141W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i= 2 2 k i2 , R 2= 2 2 k iì TT UT Pin Configuration W Ds 1 = B II CO Q 6 2 7 0 2 -C 2 2 8 8 Package o Marking Ordering Code


    OCR Scan     		833SbDS fl23Sb05 012074E Q12G743 PDF

    2sc2275

    Abstract: 2SC2275A 2sC985 2SA985 25A98 2SC985A
    Text: 2 S A 9 8 5 ,9 8 5 A 2 S C 2 2 7 5 ,2 2 7 5 A 2 S A 9 8 5 ,9 8 5 A /2 S C 2 2 7 5 ,2 2 7 5 A PNP/NPNi e 9 P N P /N P N Silicon Epitaxial Transistor Audio Frequency P ow er A m plifier. '> • = 1 > t High Froquency P ow er Am plifier FEATURES « • » 0 /P A C K A G E DIMENSIONS


    OCR Scan     		2SA985 2SC985A 2SC2275 2SC2275A 2SA985A 75/2SC2275A 2SA985. 2SA985A/2SC2275, 2SC2275A 2sc2275 2sC985 2SA985 25A98 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 141S NPN Silicon Digital Transistor Array ►Switching circuit, inverter, interface, driver circuit • T w o galvanic internal isolated Transistors in on e package > Built in bias resistor (R -|= 2 2 k il, R 2= 2 2 k fl) W Ds Q 6 2 7 0 2 -C 2 4 1 6


    OCR Scan     		PDF

    2sb526

    Abstract: 2SB529 2SC789 2SA816 2SD331 2SB513A 2SB514 2SB515 2SB523 2SB566AK
    Text: Power Transistors TYPE NO. IC mA VCE (V) VCE(sat) max (V) IC (A) fT min (MHz) COMPLE­ MENTARY TYPE # # ft ft ft 1 1 1 0.5 0.3 3 2 2 4 4 1 1 1 2 1 2 2 2 1.5 0.3 8+ 8+ - 2SD366A 2SD330 2SD331 - ft 4 4 5 2 4 1 1 1.5 1.4 10 1.5 1 3 2 2 - - # # # 0.5 1 0.5 0.5


    OCR Scan     		2SB513A O-220 2SD366A 2SB514 2SD330 2SB515 2SD331 2SB523 2sb526 2SB529 2SC789 2SA816 2SD331 2SB566AK PDF

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP T 2 9347963 D F | ^ 3 4 7 c] b 3 U N I T R O D E CORP 92D 10624 POWER MOSFET TRANSISTORS D G lG b S M D U F N 2 2 0 U F N 2 2 1 200 Volt, 0.8 Ohm N-Channel U F N 2 2 2 U F N 2 2 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		UFN220 UFN221 UFN222 UFN223 PDF

    2m2222

    Abstract: 2N2222 2N2222Metal 2N2221 2221 2N 2222 2221-2N 222-1 2N2218 br 2222 npn
    Text: 2N 2218 2N 2219 2N 2221 SILICON PLANAR NPN • 2222 H IG H - S P E E D S W IT C H E S The 2N 2 2 1 8 , 2N Jedec T O -3 9 fo r m etal cases. T he y to 5 0 0 m A , and 2 2 1 9 , 2N 2221 and 2N 2 2 2 2 are silico n p lanar e p ita xia l NPN transistors in 2 N 2 2 1 8 and 2N 2 2 1 9 and in Jedec T C I-1 8 ( fo r 2N 2221 and 2N 2222)


    OCR Scan     		PDF

    VP0300M

    Abstract: VP0300B
    Text: Tem ic VP0300B/L/M, VQ2001J/P Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part N um ber «•DS on M ax (Q ) VoSith) (V) I d (A) VP0300B 2 .5 @ V gs = - 1 2 V - 2 to -4 .5 -1 .2 5 VP0300L 2 .5 @ V GS = - 1 2 V - 2 to -4 .5 -0 .3 2


    OCR Scan     		VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P P-38283-- PDF

    N2219

    Abstract: 2N2219 F133 2N2218 2N2218A Q62702-F109 Q62702-F133 Q62702-F59 Q62702-S29 siemens 2218
    Text: 2SC D • öBBSbQS GQGMßflQ 2 H S I E G - 7 ^ -3 5 '-/^ NPN Silicon Planar Transistors 2 N 2218 2 N 2219 - SIEMENS AKTIENGESELLSCHAF- 2 N 2218 A 2 IM2219 A 2 N 2218,2 N 2219,2 N 2218 A, and 2 N 2219 Aare epitaxial NPN silicon Planartransistors


    OCR Scan     		AKTIENGESELLSCHAF-2N2218A Q62702-F109 Q62702-F133 Q62702-S29 Q62702-F59 2N2218 2N2219 fl235J /cc-30 102mA N2219 F133 2N2218A Q62702-F59 siemens 2218 PDF

    2sb1569a

    Abstract: No abstract text available
    Text: 2 S B 1 27 5 / 2 S B 1 2 3 6 A / 2 S B 1 5 6 9 A / 2 S B 1 186A Transistors 2 S D 2 2 1 1 / 2S D 1 9 1 8 / 2S D 1 8 5 7 A / 2 S D 24 00A / 2S D 17 63A I Power Transistor — 160V, —1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te maximum ratings ( T a = 2 5 t )


    OCR Scan     		2SB1275 2SB1236A 2SB1569A 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE £s2502L1V V MULTI PHOTOCOUPLER SERIES DESCRIPTION_ FEATURES_ • P S 2 5 0 2 -1 , -2, -4 and P S 2 5 0 2 L -1 , -2, -4 are optically coupled HIGH ISOLATION VO LTAG E


    OCR Scan     		s2502L1V PS2502L-1 PS2502L-2 PS2502L-4 b427525 PDF

    2SD1189F

    Abstract: 2SB1240 LL1000 g 2SD1758 2SD1766 2SD1862 2SD1919 2SD1055 2SD1227M 2SB911M
    Text: Transistors Medium Power Transistor 32V, 2A 2 S D 1 7 6 6 /2 S D 1 7 5 8 /2 S D 1 8 6 2 /2 S D 1 1 8 9 F / 2 S D 1 0 5 5 /2 S D 1 9 1 9 /2 S D 1 2 2 7 M •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) LOW VcE(sat). VcE(sat) = 0.16V (Typ.) 2SD1766


    OCR Scan     		2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M 2SB1188/2SB1182/2SB1240/2SB 891F/2SB822/2SB1277/2SB911M 2SD1758 SC-63 2SD1189F O-126FP 2SD1919 2SD1766 2SD1189F 2SB1240 LL1000 g 2SD1758 2SD1766 2SD1862 2SD1919 2SD1055 2SD1227M 2SB911M PDF