2 W RF POWER TRANSISTOR NPN Search Results

2 W RF POWER TRANSISTOR NPN Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

2 W RF POWER TRANSISTOR NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NESG270034 Abstract: ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz	Original	NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ NESG270034 ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC	PDF
1005 Ic Data Abstract: NESG270034 Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz	Original	NESG270034 NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ PU10577EJ02V0DS 1005 Ic Data	PDF
nec 2012 Abstract: NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz	Original	NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ nec 2012 NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ	PDF
ic nec 2501 Abstract: NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz	Original	NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ ic nec 2501 NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor	PDF
nec 2501 Abstract: marking NEC rf transistor ic nec 2501 PU10577EJ01V0DS nec 2012 2501 NEC NESG270034 nec npn rf 15 w RF POWER TRANSISTOR NPN Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz	Original	NESG270034 NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ nec 2501 marking NEC rf transistor ic nec 2501 PU10577EJ01V0DS nec 2012 2501 NEC nec npn rf 15 w RF POWER TRANSISTOR NPN	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 5 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -6 0 0 M H z frequency range.	OCR Scan	MRF5175	PDF
transistor c 2316 Abstract: No abstract text available Text: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF323 The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 2 0 0 - 5 0 0 M H z frequency range. 20 W, 400 MHz RF POWER TRANSISTOR	OCR Scan	MRF323 MRF323 transistor c 2316	PDF
VK200-20-4B Abstract: MRF5175 choke vk200 VK20020-4B 56590 VK200 FERRITE MRF5175 transistor VK-200-20-4B type 2951 vk200 ferrite bead Text: MRF5175 SILICON The RF Line 5 W - 400 M Hz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed p rim a rily fo r w ideba nd large-signal d riv e r and predriver a m p lifie r stages in th e 2 00 -60 0 M H z fre q u e n c y range.	OCR Scan	MRF5175 28-Volt, 400-MHz 65-3B VK200-20-4B MRF5175 choke vk200 VK20020-4B 56590 VK200 FERRITE MRF5175 transistor VK-200-20-4B type 2951 vk200 ferrite bead	PDF
e20231 Abstract: No abstract text available Text: ERICSSON í E 20231* 18 Watts, 2 . 1 - 2 . 2 GHz Cellular Radio RF Po we r Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 w atts minimum output power in class AB and 8 watts minimum output power	OCR Scan		PDF
motorola 2N5643 Abstract: transistor s97 2N5643 2n5643 motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5643 The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICO N RF POWER TRANSISTOR . . . designed p r im a r ily fo r w id e b a n d large-signal a m p lifie r stages in the 1 2 5 1 7 5 M H z fre q u e n c y range.	OCR Scan	2N5643 motorola 2N5643 transistor s97 2N5643 2n5643 motorola	PDF
transistor 7905 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R 4bE F D • b3b?2S4 00=14326 2 « flO T b -r-3 2 > " 0 = > MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA T h e R F L in e 4 W — 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 V olt large-signal power amplifier applications	OCR Scan		PDF
MRF5174 Abstract: IR 21025 Text: 4bE D M O T O R O L A SC X S T R S / R F b3b?2S4 OOISQM? 5 IMOTfe MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line 2 W —400 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 260*600 MHz frequency range.	OCR Scan	28-Volt. 400-MHz MRF5174 IR 21025	PDF
MRF317 Abstract: transistor MRF317 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W	OCR Scan	Carrier/120 MRF317 transistor MRF317	PDF
2n5642 Abstract: 2N5642 motorola 2N5642 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5642 T he R F L in e 20 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed prim arily for wideband large-signal am plifier stages in the 1 2 5 -1 7 5 M H z frequency range. •	OCR Scan	2N5642 2n5642 2N5642 motorola 2N5642 equivalent	PDF

TIC 136 Transistor Abstract: mrf412 Text: MOTOROLA SC ÎXSTRS/R "flT ]>F\|k3l.72Si\| 007flT71 5 FJ 89D 78971 6 3 6 7 2 5 4 M O T O R O L A SC XSTRS/R F t MOTOROLA - 3 D 3 SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 70 W (PEP) — 30 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed primarily for applications as a high-power amplifier	OCR Scan	007flT71 MRF412 TIC 136 Transistor mrf412	PDF
transistor rf m 1104 Abstract: motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641 Text: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Power Transistor CASE 333A– 02, STYLE 2 C9 +VCC T2 R1 C8 P1 C5 D1 C7 C6 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 50 W C1, C3 C2, C7	Original	MRF6414PHT/D MRF6414 1N4007 SD135 MRF6414 MRF6414PHT/D* transistor rf m 1104 motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641	PDF
9915 transistor Abstract: motorola rf Power Transistor beads ferroxcube 2204B IN4997 MRF412 qs-90 Text: MOTOROLA SC ÌXSTRS/R FJ AT DE \|b 3L72 SM DD7flT71 5 890 78971 & 3 6 7 2 S 4 M O T O R O L A SC CXSTRS/R F T ' 33 ' 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF412 The RF Line 7 0 W (P E P ) — 3 0 M H z NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR	OCR Scan	D07flT71 MRF412 -136V T-33-IS 9915 transistor motorola rf Power Transistor beads ferroxcube 2204B IN4997 MRF412 qs-90	PDF
MRF247 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF247 The RF Line 75 W - 175 MHz CONTROLLED Q RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed fo r 1 2 .5 V o lt V H F large-signal am plifier applications N P N S IL IC O N in industrial and com m ercial FM equ ipm ent operating to 175 M H z.	OCR Scan	MRF247 MRF247	PDF
2N6439 Abstract: BH Rf transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W — 225-400 MHz CO N TR O LLE D " Q " B R O A D BA N D RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR . , . designed p rim a rily fo r w id e b a n d large-signal o u tp u t a m p lifie r stages in the 2 2 5 -4 0 0 M H z fre q u e n c y range.	OCR Scan		PDF
MRF338 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF338 The RF Line 80 W - 4 0 0 -5 1 2 MHz CONTROLLED " Q " B R O A DBA ND RF POWER TRAN SISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed p rim a rily for w ideband large-signal output and driver a m plifier stages in the 4 0 0 -5 1 2 MHz frequency range.	OCR Scan	MRF338 MRF338	PDF
motorola rf Power Transistor mrf317 Abstract: hfc4 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W	OCR Scan	Carrier/120 MBF317 motorola rf Power Transistor mrf317 hfc4	PDF
transistor MRF317 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal outpul amplifier stages in 3 0 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W	OCR Scan	Carrier/120 MRF317 transistor MRF317	PDF
Transistor TP 2307 Abstract: motorola rf Power Transistor mrf317 F317 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F317 The RF Line NPN Silicon RF P o w er Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W	OCR Scan	Carrier/120 MRF317 Transistor TP 2307 motorola rf Power Transistor mrf317 F317	PDF
M9409 Abstract: transistor 342 G motorola 2N5643 Text: MOTOROLA SC XST RS/ R F 4bE D L3 b 7 2 S4 OGIMÜTE 2 MOTOROLA . ' P - 3 3 " 11 • S E M IC O N D U C T O R TECHNICAL DATA 2N5643 The RF Line 40 W - 175 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR designed p rim a rily fo r w id e b a n d large-signal a m p lifie r stages in	OCR Scan	2N5643 M9409 transistor 342 G motorola 2N5643	PDF

2 W RF POWER TRANSISTOR NPN Search Results

2 W RF POWER TRANSISTOR NPN Result Highlights (5)

2 W RF POWER TRANSISTOR NPN Datasheets Context Search

NESG270034

1005 Ic Data

nec 2012

ic nec 2501

nec 2501

Untitled

transistor c 2316

VK200-20-4B

e20231

motorola 2N5643

transistor 7905

MRF5174

MRF317

2n5642

TIC 136 Transistor

transistor rf m 1104

9915 transistor

MRF247

2N6439

MRF338

motorola rf Power Transistor mrf317

transistor MRF317

Transistor TP 2307

M9409