2.4 GHZ RF TRANSISTOR Search Results

2.4 GHZ RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

2.4 GHZ RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: NXP power LDMOS transistors BLF7G24LS-100 and BLF7G24LS-140 RF power transistors for leading LTE basestation performance at 2.3 to 2.4 GHz Designed for LTE basestations and built in industry-leading Gen7 LDMOS, these highly DPDfriendly transistors cover the entire frequency range of 2.3 to 2.4 GHz. They enable asymmetrical	Original	BLF7G24LS-100 BLF7G24LS-140 BLF7G24LS-100 BLF7G24LS-140	PDF
Untitled Abstract: No abstract text available Text: SP5748 2.4 GHz Very Low Phase Noise PLL Data Sheet DS4875 November 2004 Features Ordering Information • Complete 2.4 GHz Single Chip System for faster device refer to SP5768 • Optimised for Low Phase Noise, with Comparison Frequencies up to 4 MHz • No RF Prescaler	Original	SP5748 DS4875 SP5768) SP5658 SP5668 110mW SP5658 MIL-STD-883B SP5748/KG/MP1S SP5748/KG/MP1T	PDF
TRANSFORMER RF 4.5 MHZ TOKO Abstract: Motorola Impedance Matching Program 6 pin SMD transformer TOKO 4.5 transformer motorola smd diodes b4f TOKO transformer 3 to 10 GHz mixer SIEMENS saw filter Mixer IC high frequency mixer Text: Order this document from Analog Marketing MC13143 Product Preview Ultra Low Power DC 2.4 GHz Linear Mixer ULTRA LOW POWER DC – 2.4 GHz LINEAR MIXER The MC13143 is a high compression linear mixer with single–ended RF input, differential IF output and differential LO inputs which consumes as	Original	MC13143 MC13143 MC13143/D* MC13143/D TRANSFORMER RF 4.5 MHZ TOKO Motorola Impedance Matching Program 6 pin SMD transformer TOKO 4.5 transformer motorola smd diodes b4f TOKO transformer 3 to 10 GHz mixer SIEMENS saw filter Mixer IC high frequency mixer	PDF
BFR90 Abstract: No abstract text available Text: BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz typ @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T	Original	BFR90 MRF545 MRF544 BFR90	PDF
BFR96 Abstract: No abstract text available Text: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz typ @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro T	Original	BFR96 MRF5812, MRF559 MRF8372 MRF557 MRF557T BFR96	PDF
transistor marking R57 ghz Abstract: No abstract text available Text: NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	NE664M04 2SC5754 NE664M04-A 2SC5754-A NE664M04-T2-A 2SC5754-T2-A PU10008EJ01V0DS transistor marking R57 ghz	PDF
j 6815 transistor Abstract: 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	2SC5754 2SC5754-T2 j 6815 transistor 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A PU10008EJ01V0DS	PDF
TRANSISTOR J 6815 EQUIVALENT Abstract: 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	2SC5754 2SC5754-T2 TRANSISTOR J 6815 EQUIVALENT 2SC5754-T2 nec k 813 DCS1800 GSM1800 NE5520379A 2SC5434 2SC5509 2SC5753 2SC5754	PDF
transistor smd d2t Abstract: lm 4572 SMD 8 PIN smd transistor h2a H2A transistor SMD smd code H2A motorola smd transistor code 935 transistor smd H2A TOKO CERAMIC FILTER siemens rfm-1 TOKO B5FL Text: MC13143 Product Preview Ultra Low Power DC 2.4 GHz Linear Mixer ULTRA LOW POWER DC – 2.4 GHz LINEAR MIXER The MC13143 is a high compression linear mixer with single–ended RF input, differential IF output and differential LO inputs which consumes as little as 1.8 mW. A new circuit topology is used to achieve a high third order	Original	MC13143 MC13143 transistor smd d2t lm 4572 SMD 8 PIN smd transistor h2a H2A transistor SMD smd code H2A motorola smd transistor code 935 transistor smd H2A TOKO CERAMIC FILTER siemens rfm-1 TOKO B5FL	PDF
transistor marking R57 ghz Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm	Original	2SC5754 2SC5754-T2 PU10008EJ02V0DS transistor marking R57 ghz TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800	PDF
BFY182 Abstract: No abstract text available Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz •	Original	BFY182 Q62702F1608 QS9000 BFY182	PDF
bfp640f Abstract: transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ Text: Application Note, Rev. 1.2, Oktober 2007 Application Note No. 126 BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Low Noise Amplifier LNA , with reduced external component count and reduced gain at 2.4 GHz RF & Protection Devices Edition 2007-10-17	Original	BFP640F transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ	PDF
Untitled Abstract: No abstract text available Text: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz	OCR Scan	BFY182 Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 FY182 GXM05552	PDF
RAYTHEON Abstract: RMPA2550-252 54Mbps IC155 Text: Raytheon RMPA2550-252 RF Components 2.4-2.5 GHz and 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Absolute Ratings1 The RMPA2550-252 is a dual frequency band power amplifier designed for high performance WLAN	Original	RMPA2550-252 RMPA2550-252 10dBm 16dBm 20dBm 14dBm 17dBm 21dBm 24dBm RAYTHEON 54Mbps IC155	PDF

on semiconductor marking code A04 Abstract: marking A04 C BFY182 Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz	Original	Q62702F1608 Q62702F1714 BFY182 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 on semiconductor marking code A04 marking A04 C	PDF
bfr96 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz	Original	BFR96 bfr96	PDF
BFR90 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz	Original	BFR90 BFR90	PDF
BFR90 Abstract: BFR90 application Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz	Original	BFR90 MRF571 BFR91 MRF545 MRF544 BFR90 BFR90 application	PDF
BFR96 Abstract: MSC1309 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz	Original	BFR96 2N5179 2N2857 MRF517 2N5109 MRF5943C MRF5943, MSC1309 BFR96 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607	PDF
Untitled Abstract: No abstract text available Text: BFY182 HiRel NPN Silicon RF Transistor •     HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz	Original	BFY182	PDF
BFR96 Abstract: MRF586 bfr96 equivalent Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz	Original	BFR96 2N5179 2N2857 MRF517 2N5109 MRF5943C MRF5943, BFR96 MRF586 bfr96 equivalent	PDF
BFR90 Abstract: 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz	Original	BFR90 MRF571 BFR91 MRF545 MRF544 MSC1307 BFR90 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF607	PDF
BFY182 Abstract: No abstract text available Text: BFY182 HiRel NPN Silicon RF Transistor •     HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz	Original	BFY182 BFY182	PDF
MS3421 Abstract: s band Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS3421 RF & MICROWAVE TRANSISTORS S BAND GENERAL PURPOSE Features • • • • GOLD METALIZATION 600 mW POWER OUTPUT 2.4 GHz OPERATION COMMON BASE CONFIGURATION	Original	MS3421 MS3421 MSC0929 s band	PDF

2.4 GHZ RF TRANSISTOR Search Results

2.4 GHZ RF TRANSISTOR Result Highlights (5)

2.4 GHZ RF TRANSISTOR Datasheets Context Search

Untitled

Untitled

TRANSFORMER RF 4.5 MHZ TOKO

BFR90

BFR96

transistor marking R57 ghz

j 6815 transistor

TRANSISTOR J 6815 EQUIVALENT

transistor smd d2t

transistor marking R57 ghz

BFY182

bfp640f

Untitled

RAYTHEON

on semiconductor marking code A04

bfr96

BFR90

BFR90

BFR96

Untitled

BFR96

BFR90

BFY182

MS3421