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    2.45 GHZ POWER AMPLIFIER Search Results

    2.45 GHZ POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    2.45 GHZ POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CAP 0805 ATC 600F

    Abstract: chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw
    Text: TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs PHOTO ENLARGEMENT FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %


    Original     		PDF TC2997D TC2997D GRM39COG0R75C50V GRM39COG2RC50V GRM39COG1R2C50V GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L) 250WVDC) CAP 0805 ATC 600F chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw

    TC2996D

    Abstract: GaAs FET chip GRM39Y5V104Z25V
    Text: TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %


    Original     		PDF TC2996D TC2996D GRM39COG0R7C50V GRM39COG1R5C50V 1000PF GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V GRM31CF5E106ZA01L) GRM39COG2R5C50V GaAs FET chip GRM39Y5V104Z25V

    UM 7106

    Abstract: TC2696 2.45 Ghz power amplifier
    Text: TC2696 REV.2_04/12/2004 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • 2 W Typical Output Power at 2.45 GHz • 14 dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 43 dBm Typical at 2.45 GHz • • High Power Added Efficiency:


    Original     		PDF TC2696 TC2696 TC1606 UM 7106 2.45 Ghz power amplifier

    power amplifier circuit diagram with pcb layout

    Abstract: PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db
    Text: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400 series. These transistors are


    Original     		PDF BFG480W BFG480W, BFG400 MGS765 MGS766 power amplifier circuit diagram with pcb layout PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db

    TAE-1010AB

    Abstract: Teledyne Electronic Technologies tae1010 1010a tae-1010
    Text: Product Information ISO 9001 CERTIFIED TAE-1010AB 2.45 GHz GaAs MMIC ISM Band Power Amplifier Features: ♦ ♦ ♦ ♦ ♦ 1/4 Watt Output Power 25 dB Gain Low Voltage Operation 3 Stage GaAs MMIC Amplifier Surface Mount Package Product Description: The TAE-1010AB is a 3 stage GaAs MMIC MESFET power amplifier for 2.45 GHz ISM applications.


    Original     		PDF TAE-1010AB TAE-1010AB Teledyne Electronic Technologies tae1010 1010a tae-1010

    vm 700

    Abstract: RMPA2550
    Text: RMPA2550 2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier General Description • 27 dB modulated gain 5.15 to 5.85 GHz band • 26 dBm output power @ 1 dB compression both frequency bands • 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz


    Original     		PDF RMPA2550 11a/b/g RMPA2550 vm 700

    Untitled

    Abstract: No abstract text available
    Text: RMPA2550 2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier General Description • 27 dB modulated gain 5.15 to 5.85 GHz band • 26 dBm output power @ 1 dB compression both frequency bands • 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz


    Original     		PDF RMPA2550 RMPA2550

    UPD5702TU

    Abstract: UPD5702TU-E2
    Text: PRELIMINARY DATA SHEET NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU INTERNAL BLOCK DIAGRAM FEATURES • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz • ON CHIP OUTPUT POWER CONTROL FUNCTION Pout2 1 8 Pin2 Pout2 2 7 Pin2 GND 3 6 GND


    Original     		PDF UPD5702TU UPD5702TU UPD5702TU-E2

    IPC-SM-782

    Abstract: RF5189 mini pci pcb layout
    Text: RF5189 RF51893V, 2.45 GHz Linear Power Amplifier 3V, 2.45GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power 25dB Small Signal Gain  High Linearity 2400MHz to 2500MHz Frequency Range IEEE802.11B WLAN Applications  2.5GHz ISM Band Applications 


    Original     		PDF RF5189 RF51893V, 45GHz 30dBm 2400MHz 2500MHz IEEE802 2002/95/EC DS100621 IPC-SM-782 RF5189 mini pci pcb layout

    UPD5702TU

    Abstract: UPD5702TU-E2-A
    Text: NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU INTERNAL BLOCK DIAGRAM FEATURES • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz • ON CHIP OUTPUT POWER CONTROL FUNCTION Pout2 1 8 Pin2 Pout2 2 7 Pin2 GND 3 6 GND Pin1 4 5 Pout1 • SINGLE SUPPLY VOLTAGE:


    Original     		PDF UPD5702TU UPD5702TU UPD5702TU-E2-A

    TC3879

    Abstract: thermal conductivity ceramic FET
    Text: TC3879 PRE1_20070518 Preliminary 7 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT ! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35%


    Original     		PDF TC3879 TC3879 thermal conductivity ceramic FET

    326 teledyne

    Abstract: TAE-1030 250 watt amplifier 2.45 Ghz power amplifier 500 watt RF amplifier GHz amplifier 245 2.45 Ghz power amplifier 30 db
    Text: Product Information ISO 9001 CERTIFIED TAE-1030 2.45 GHz GaAs MMIC ISM Band Power Amplifier Features: ♦ ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power 28.5 dBm Minimum Linear Output Power 25 dB Minimum Small Signal Gain High Efficiency Linear Operation Thermally Efficient Moly-Copper Package


    Original     		PDF TAE-1030 TAE-1030 326 teledyne 250 watt amplifier 2.45 Ghz power amplifier 500 watt RF amplifier GHz amplifier 245 2.45 Ghz power amplifier 30 db

    TAE-1030

    Abstract: No abstract text available
    Text: Product Information ISO 9001 CERTIFIED TA E - 1 0 3 0 2.45 GHz GaAs MMIC ISM Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +30dBm Saturated Output Power 28.5 dBm Minimum Linear Output Power 25 dB Minimum Small Signal Gain Thermally Efficient Moly-Copper Package


    Original     		PDF 30dBm TAE-1030

    NE552R479A-T1A

    Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec
    Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our


    Original     		PDF NE552R479A NE552R479A NE552R479A-T1A VP215 GSM1900 NE552R479A-T1 ldmos nec

    2.45 Ghz power amplifier 45 dbm

    Abstract: J842 2.45 Ghz power amplifier 30 db
    Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our


    Original     		PDF NE552R479A NE552R479A HS350-P3 WS260 VP215 IR260 PU10124EJ03V0DS 2.45 Ghz power amplifier 45 dbm J842 2.45 Ghz power amplifier 30 db

    2.45 Ghz power amplifier

    Abstract: TAE-1010AB RF MESFET S parameters 1010a tae1010
    Text: Product Information ISO 9001 CERTIFIED TA E - 1 0 1 0 A B 2.45 GHz GaAs MMIC ISM Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +24dBm Output Power @ 1dB Gain Compression 25 dB Gain Low V oltage Operation Voltage Surface Mount Molly-Copper Package Product Description


    Original     		PDF 24dBm TAE-1010AB 2.45 Ghz power amplifier RF MESFET S parameters 1010a tae1010

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our


    Original     		PDF NE552R479A NE552R479A

    ne552r

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our


    Original     		PDF NE552R479A NE552R479A ne552r

    Untitled

    Abstract: No abstract text available
    Text: «Fl MICRO-DEVICES Proposed RF2127 I 2.5 GHz MEDIUM POWER LINEAR AMPLIFIER Application: Features: • • • • • • • • • • Wireless LAN PCS Communication Systems 2.45 GHz ISM Applications Commercial and Consumer Systems Portable Battery Powered Equipment


    OCR Scan     		PDF RF2127 14-lead RF2127 7341-D

    RF2127

    Abstract: transistor F24 47
    Text: R F I M IC R O -D EV IC ES Proposed RF2127 I 2.5 GHz MEDIUM POWER LINEAR AMPLIFIER Application: Features: • • • • • • Single Positive Supply Operation • Operates from 3V to 6.5V Wireless LAN PCS Communication Systems 2.45 GHz ISM Applications


    OCR Scan     		PDF RF2127 14-lead 7341-D T004131 transistor F24 47

    FC20U

    Abstract: SA2420 SA2421 SA2421DH TSSOP24
    Text: Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 DESCRIPTION PIN CONFIGURATION The SA2421 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buffer IC designed using a 20 GHz f j BiCMOS process, QUBiC2, for high-performance low-power


    OCR Scan     		PDF SA2421 SA2421 FC20U SA2420 SA2421DH TSSOP24

    SA2420DH

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined tow-noise amplifier, receive mixer, transmit mixer and LO buffer 1C designed tor high-performance iow-power communication systems for


    OCR Scan     		PDF SA2420 SA2420 45GHz 45GHz. 45GHz TSSOP24 -10dBm 50-500MHz SR00164 SA2420DH

    LNA Mixer VCO 2.4 GHz

    Abstract: 2.1Ghz oscillator 2.45Ghz 10dbm oscillator PHILIPS CD 245 LNa - 2.45Ghz 2.45Ghz oscillator circuit
    Text: Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buffer 1C designed for high-performance iow-power communication systems for


    OCR Scan     		PDF SA2420 SA2420 45GHz 45GHz. LNA Mixer VCO 2.4 GHz 2.1Ghz oscillator 2.45Ghz 10dbm oscillator PHILIPS CD 245 LNa - 2.45Ghz 2.45Ghz oscillator circuit

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2421 PIN CONFIGURATION The SA2421 transceiver is a combined low-nolse amplifier, receive mixer, transmit mixer and LO buffer IC designed for high-performance low-power communication systems for


    OCR Scan     		PDF SA2421 SA2421 45GHz 45GHz. 45GHz TSSOP24 -10dBm 50-500MHz