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    2.5 GHZ LNA TRANSISTOR Search Results

    2.5 GHZ LNA TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2.5 GHZ LNA TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GRF4003 Preliminary Broadband LNA/Linear Driver 0.1 – 3.8 GHz Package: 6-Pin DFN Product Description Features • 0.7 GHz to 3.8 GHz Single Match • Bias Condition: 5.0 V/95 mA • NF: 0.70 dB @ 2.5 GHz • Gain: 13.0 dB @ 2.5 GHz • OIP3: +42 dBm @ 2.5 GHz


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    GRF4003 GRF4003 PDF

    MICROSEMI RF TRANSISTOR

    Abstract: No abstract text available
    Text: Abridged Datasheet LX5563 2.4 - 2.5 GHz LNA With Bypass Description Features The LX5563 is a low noise amplifier LNA for WLAN applications in the 2.412 to 2.472 GHz frequency range. It operates with a single voltage supply of 3.3V, and features both high gain and bypass modes.


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    LX5563 LX5563 412GHz 472GHz 18dBm MICROSEMI RF TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: Abridged Datasheet LX5563 2.4 - 2.5 GHz LNA With Bypass Description Features The LX5563 is a low noise amplifier LNA for WLAN applications in the 2.412 to 2.472 GHz frequency range. It operates with a single voltage supply of 3.3V, and features both high gain and bypass modes.


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    LX5563 LX5563 412GHz 472GHz 18dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: Abridged Datasheet LX5563 2.4 - 2.5 GHz LNA With Bypass Description Features The LX5563 is a low noise amplifier LNA for WLAN applications in the 2.412 to 2.472 GHz frequency range. It operates with a single voltage supply of 3.3V, and features both high gain and bypass modes.


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    LX5563 LX5563 412GHz 472GHz 18dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: GRF5020 Preliminary +28.5 dBm Power-LNA 0.1 – 3.8 GHz Package: 3.0 x 3.0 mm QFN-16 Product Description Features • 1.7 – 2.7 GHz with single match • 17.5 dB Gain at 2500 GHz • Evaluation Board NF: 0.77 dB at 2.5 GHz • OP1dB: +28.5 dBm at Vdd: 8.0 volts


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    GRF5020 QFN-16 GRF5020 PDF

    XR1015

    Abstract: No abstract text available
    Text: 10.0-16.0 GHz GaAs Receiver QFN, 4x4mm R1015-QH October 2008 - Rev 25-Oct-08 Features Integrated LNA, Mixer and LO Buffer Amplifier 2.5 dB Noise Figure 12.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 10.0-16.0 GHz QFN packaged receiver


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    25-Oct-08 R1015-QH XR1015-QH XR1015 PDF

    XR1015

    Abstract: No abstract text available
    Text: 10.0-16.0 GHz GaAs Receiver QFN, 4x4mm R1015-QH August 2008 - Rev 28-Aug-08 Features Integrated LNA, Mixer and LO Buffer Amplifier 2.5 dB Noise Figure 12.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 10.0-16.0 GHz QFN packaged receiver


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    28-Aug-08 R1015-QH XR1015-QH XR1015 PDF

    R1019-QH

    Abstract: R1019 XR1019 XR1019-QH
    Text: 27.0-34.0 GHz GaAs Receiver QFN, 4x4mm R1019-QH February 2010 - Rev 9-Feb-10 Features Integrated LNA, Mixer and LO Buffer Amplifier 2.5 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 27.0-34.0 GHz QFN packaged


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    R1019-QH 9-Feb-10 XR1019-QH R1019-QH R1019 XR1019 PDF

    Untitled

    Abstract: No abstract text available
    Text: 27.5-33.4 GHz GaAs Receiver QFN, 4x4mm R1019-QH March 2011 - Rev 22-Mar-11 Features Integrated LNA, Mixer and LO Buffer Amplifier 2.5 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 27.5-33.4 GHz QFN packaged


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    R1019-QH 22-Mar-11 PDF

    LNA XR1015-QH

    Abstract: No abstract text available
    Text: 10.0-16.0 GHz GaAs Receiver QFN, 4x4mm R1015-QH May 2008 - Rev 28-May-08 Features Integrated LNA, Mixer and LO Buffer Amplifier 2.5 dB Noise Figure 12.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 10.0-16.0 GHz QFN packaged receiver


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    28-May-08 R1015-QH XR1015-QH LNA XR1015-QH PDF

    XR1015-QH

    Abstract: R1015-QH id-12 LNA XR1015-QH MRF transistor High frequency MRF transistor
    Text: 10.0-16.0 GHz GaAs Receiver QFN, 4x4mm R1015-QH August 2009 - Rev 28-Aug-09 Features Integrated LNA, Mixer and LO Buffer Amplifier 2.5 dB Noise Figure 12.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 10.0-16.0 GHz QFN packaged


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    R1015-QH 28-Aug-09 XR1015-QH R1015-QH id-12 LNA XR1015-QH MRF transistor High frequency MRF transistor PDF

    R1019-QH

    Abstract: No abstract text available
    Text: 27.0-34.0 GHz GaAs Receiver QFN, 4x4mm R1019-QH December 2009 - Rev 11-Dec-09 Features Integrated LNA, Mixer and LO Buffer Amplifier 2.5 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 27.0-34.0 GHz QFN packaged


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    11-Dec-09 R1019-QH XR1019-QH R1019-QH PDF

    Untitled

    Abstract: No abstract text available
    Text: 10.0-16.0 GHz GaAs Receiver QFN, 4x4mm R1015-QH August 2009 - Rev 28-Aug-09 Features Integrated LNA, Mixer and LO Buffer Amplifier 2.5 dB Noise Figure 12.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 10.0-16.0 GHz QFN packaged


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    R1015-QH 28-Aug-09 XR1015-QH PDF

    XR1019-QH

    Abstract: R1019-QH XR1019
    Text: 27.5-33.4 GHz GaAs Receiver QFN, 4x4mm R1019-QH March 2011 - Rev 22-Mar-11 Features Integrated LNA, Mixer and LO Buffer Amplifier 2.5 dB Noise Figure 13.0 dB Conversion Gain 4x4mm QFN Package 100% RF, DC and NF Testing General Description Mimix Broadband’s 27.5-33.4 GHz QFN packaged


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    R1019-QH 22-Mar-11 XR1019-QH R1019-QH XR1019 PDF

    740F-080930

    Abstract: michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note BFP740F LQP10A MTA-100 Miteq SMC-02 AN17-1
    Text: Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications


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    BFP740F 11b/g BFP620 AN171) 740F-080930 michael hiebel fundamentals of vector analysis j22332 Digital Oscilloscope Preamplifier BFP620 applications note LQP10A MTA-100 Miteq SMC-02 AN17-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bluetooth Front End T7024 Design Guide General Information The T7024 is a single supply front end designed especially for applications in the 2.4 GHz to 2.5 GHz frequency band. The front end consists of a Power Amplifier PA , a Low-Noise Amplifier (LNA) and a switch driver for a PIN diode antenna switch.


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    T7024 T7024 4549Câ PDF

    dc to 3 ghz lna application circuits

    Abstract: bipolar transistor ghz s-parameter 300 ohm 2 ghz Antenna T7024 atmel 811 schematics for a PA amplifier QFN20 short distance rf tx ic J103 transistor top view ICT7024
    Text: Bluetooth Front-end IC T7024 Design Guide General Information The T7024 is a single supply front-end IC especially designed for applications in the 2.4 GHz to 2.5 GHz frequency band. The front end consists of a Power Amplifier PA , a Low-Noise Amplifier (LNA) and a switch driver for a PIN diode antenna switch.


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    T7024 T7024 4549D dc to 3 ghz lna application circuits bipolar transistor ghz s-parameter 300 ohm 2 ghz Antenna atmel 811 schematics for a PA amplifier QFN20 short distance rf tx ic J103 transistor top view ICT7024 PDF

    short distance rf tx ic

    Abstract: T7026 high power fet amplifier schematic BLOCKING TERMINATIONS SMA 18 GHz 1NF1
    Text: T7026 Front-end IC for WDCT Applications 1. General Information The T7026 is a single supply front-end IC especially designed for applications in the 2.4 GHz to 2.5 GHz frequency band. The front end consists of a Power Amplifier PA , a Low-Noise Amplifier (LNA) and a switch driver for a pin diode antenna switch.


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    T7026 4795B short distance rf tx ic high power fet amplifier schematic BLOCKING TERMINATIONS SMA 18 GHz 1NF1 PDF

    R1006 transistor

    Abstract: transistor R1006 r1006 R1006 diode 84-1LMI XR1006
    Text: 18.0-25.0 GHz GaAs MMIC Receiver R1006 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing


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    R1006 13-May-05 MIL-STD-883 R1006 transistor transistor R1006 r1006 R1006 diode 84-1LMI XR1006 PDF

    LX5553

    Abstract: No abstract text available
    Text: LX5553 TM 2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION provides about 25dB power gain, and +17dBm linear output power, with EVM <3% for 64QAM/ 54Mbps OFDM. Both gain and power are


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    LX5553 17dBm 64QAM/ 54Mbps LX5553 PDF

    transistor R1005

    Abstract: R1005 transistor R1005
    Text: 19.0-26.0 GHz GaAs MMIC Receiver R1005 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing


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    13-May-05 MIL-STD-883 transistor R1005 R1005 transistor R1005 PDF

    R1006 transistor

    Abstract: transistor R1006 BPF 1608
    Text: 18.0-25.0 GHz GaAs MMIC Receiver R1006 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing


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    13-May-05 MIL-STD-883 R1006 transistor transistor R1006 BPF 1608 PDF

    Untitled

    Abstract: No abstract text available
    Text: LX5553 TM 2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SP3T Switch P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION provides about 25dB power gain, and +17dBm linear output power, with EVM <3% for 64QAM/ 54Mbps OFDM. Both gain and power are


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    LX5553 17dBm 64QAM/ 54Mbps LX5553 PDF

    XR1006-BD

    Abstract: DM6030HK TS3332LD XR1006 XR1006-BD-000V XR1006-BD-EV1
    Text: 18.0-25.0 GHz GaAs MMIC Receiver August 2007 - Rev 13-Aug-07 Features Chip Device Layout R1006-BD Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing


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    13-Aug-07 R1006-BD MIL-STD-883 XR1006-BD-000V XR1006-BD-EV1 XR1006 XR1006-BD DM6030HK TS3332LD XR1006-BD-000V XR1006-BD-EV1 PDF