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    20 SOT23-6 ESD Search Results

    20 SOT23-6 ESD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4CT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    20 SOT23-6 ESD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    W20R

    Abstract: No abstract text available
    Text: Features • DEA 24Q 02 ■ 6 003 ■ ■ Applications Supports 15 KV IEC 61000-4-2 ESD equipment specification* Single device protects as many as 20 lines on exposed pins, communications ports Incorporates 40 bi-directional PN junction diodes Small form factor replaces 20 SOT23


    Original     		DEA002 W20R PDF

    2DEA-2-Q24R

    Abstract: 2DEA-2-Q24T 2DEB-2-W20R 2DEB-2-W20T 2QSP24 BAV99 DEA002 MO-137 MS-013 BIDIRECTIONAL DIODE
    Text: Features • DEA 24Q 02 ■ 003 6 ■ ■ Applications Supports 15 KV IEC 61000-4-2 ESD equipment specification† Single device protects as many as 20 lines on exposed pins, communications ports Incorporates 40 bi-directional PN junction diodes Small form factor replaces 20 SOT23


    Original     		MO-137. MS-013. 2QSP24 WBSOIC20 e/TF0201 2DEA-2-Q24R 2DEA-2-Q24T 2DEB-2-W20R 2DEB-2-W20T 2QSP24 BAV99 DEA002 MO-137 MS-013 BIDIRECTIONAL DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541 PDF

    ZXTC2062E6

    Abstract: TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp
    Text: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541 ZXTC2062E6 TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp PDF

    3554M

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to


    Original     		ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541 3554M PDF

    MAX4514

    Abstract: AE MARKING 5PIN
    Text: 19-1069; Rev 0; 6/96 Low-Voltage, Low-On-Resistance, SPST, CMOS Analog Switches _Features ♦ Available in SOT23-5 Package ♦ +2V to +12V Single-Supply Operation ♦ Guaranteed On-Resistance: 20Ω with +5V Supply 10Ω with +12V Supply


    Original     		MAX4514/MAX4515 MAX4514 MAX4515 MAX4516/MAX4517. OT23-5 AE MARKING 5PIN PDF

    Marking AE sot23-5

    Abstract: MAX4514 w8001 Marking AE sot235 AF SOT23-5 MAX4514CUK MAX4514CPA MAX4514CSA MAX4515 sot23-5 AE
    Text: 19-1069; Rev 0; 6/96 Low-Voltage, Low-On-Resistance, SPST, CMOS Analog Switches _Features ♦ Available in SOT23-5 Package ♦ +2V to +12V Single-Supply Operation ♦ Guaranteed On-Resistance: 20Ω with +5V Supply 10Ω with +12V Supply


    Original     		OT23-5 150ns, 100ns OT23-5 MAX4514/MAX4515 Marking AE sot23-5 MAX4514 w8001 Marking AE sot235 AF SOT23-5 MAX4514CUK MAX4514CPA MAX4514CSA MAX4515 sot23-5 AE PDF

    Untitled

    Abstract: No abstract text available
    Text: LM2765 www.ti.com SNVS070B – MAY 2004 – REVISED OCTOBER 2004 LM2765 Switched Capacitor Voltage Converter Check for Samples: LM2765 FEATURES APPLICATIONS • • • • • • • • • • • 1 2 Doubles Input Supply Voltage SOT23-6 Package 20 Typical Output Impedance


    Original     		LM2765 SNVS070B LM2765 OT23-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: LM2766 www.ti.com SNVS071A – MAY 2004 – REVISED OCTOBER 2004 LM2766 Switched Capacitor Voltage Converter Check for Samples: LM2766 FEATURES APPLICATIONS • • • • • • • • • • • 1 2 Doubles Input Supply Voltage SOT23-6 Package 20 Typical Output Impedance


    Original     		LM2766 SNVS071A LM2766 OT23-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance


    Original     		ZXMN2088DE6 OT23-6 OT23-6 ZXMN2088DE6TA D-81541 PDF

    ZXMN2088

    Abstract: TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2
    Text: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance


    Original     		ZXMN2088DE6 OT23-6 OT23-6 ZXMN2088DE6TA D-81541 ZXMN2088 TS16949 ZXMN2088DE6 ZXMN2088DE6TA SOT23-6 MARKING g2 PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 PDF

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor PDF

    1F SOT 23

    Abstract: 1F SOT-23 1a SOT-23 LBC846ALT1G 2f sot-23 2b sot 23 LBC846 LBC847 LBC847ALT1G LBC850
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849 1F SOT 23 1F SOT-23 1a SOT-23 LBC846ALT1G 2f sot-23 2b sot 23 LBC846 LBC847 LBC847ALT1G LBC850 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • Pb-Free Packages are Available 3 MAXIMUM RATINGS Rating


    Original     		LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849 PDF

    Untitled

    Abstract: No abstract text available
    Text: DIODE SOLUTIONS ESD PROTECTION DEVICES SMC Diodes www.smc-diodes.com 003-0415 ESD Protection Devices FEATURES APPLICATIONS • Protects 3.3V, 5V, 12V, 15V, 24V component • Low junction capacitance • Provides electrically isolated protection • Small package solutions


    Original     		SO-16 OT-23 5x1-10L OD-323 PDF

    smd code marking WV

    Abstract: sot23-4 marking a1 A1 SOT23 marking code E1 sot23 marking code NA sot23 MARKING SOT23 .215 .235 12nc sot23-6 can bus automotive DIODE package sot23 smd marking A1 A.1 SOT23-4
    Text: PESD1CAN CAN bus ESD protection diode in SOT23 Rev. 01 — 25 January 2005 Objective data sheet 1. Product profile 1.1 General description PESD1CAN in small SOT23 SMD plastic package designed to protect two automotive Control Area Network CAN bus lines from the damage caused by ElectroStatic


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC857CLT1G PDF

    LBC858ALT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC857CLT1G S-LBC857CLT1G OT-23 LBC858ALT1G PDF

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC556 sot package sot-23 LBC856BLT1G BC558 SOT-23 bc557 bc557 package sot23 Transistor Bc556 SOT-23 marking P 26 LBC856
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC857CLT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		LBC857CLT1G LBC856 LBC857 LBC858, LBC859 LBC857CLT1G BC557 sot package sot-23 BC557 sot-23 BC556 sot package sot-23 LBC856BLT1G BC558 SOT-23 bc557 bc557 package sot23 Transistor Bc556 SOT-23 marking P 26 LBC856 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V • ESD Rating – Machine Model: >400 V We declare that the material of product compliance with


    Original     		LBC856ALT1G LBC856 LBC857 LBC858, LBC859 LBC856ALT1G PDF

    LBC846BLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		LBC846ALT1G S-LBC846ALT1G AEC-Q101 LBC846 LBC847, LBC850 LBC848, LBC849 LBC846BLT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Series • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.


    Original     		LBC846ALT1G LBC846 LBC847, LBC850 LBC848, LBC849 PDF

    LBC857BLT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with


    Original     		LBC857CLT1G S-LBC857CLT1G AEC-Q101 LBC856 LBC857 LBC858, LBC859 LBC857BLT1G PDF