PD432206
Abstract: powerex igbt six pack igbt module testing SCR 2000V 1000A CM400DU-24NFH ND411635 CM150DU-24NFH MIL-STD-1189 pwm INVERTER welder CM400DU-12NFH
Text: News of Importance to Power Semiconductor Users www.pwrx.com FOURTH QUARTER 2003 Powerex NFH-Series Cuts Esw off /A In Half Designed for use in high frequency applications – 30kHz for hard switching applications and 60 to 70 kHz for soft switching applications – the Powerex NFH-Series IGBT features an
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30kHz
PD432206
powerex igbt six pack
igbt module testing
SCR 2000V 1000A
CM400DU-24NFH
ND411635
CM150DU-24NFH
MIL-STD-1189
pwm INVERTER welder
CM400DU-12NFH
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Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ802 High-Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.
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MJ802
100-Watts
PNPMJ4502
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Untitled
Abstract: No abstract text available
Text: , LJnc. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 FAST NPN SWITCHING TRANSISTOR NPN BUV28 high speed transistors suited for low voltage application: " High Frequency and Efficiency Converters
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BUV28
600mA)
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Untitled
Abstract: No abstract text available
Text: , < Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6049 MEDIUM-POWER PNP SILICON TRANSISTOR 4 AMPERE . . . designed for general-purpose switching and amplifier applications POWER TRANSISTOR
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2N6049
2N30S4A
300fll,
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Untitled
Abstract: No abstract text available
Text: l c/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MJ10042 MJ10045 MJ10048 25, GO, and 100 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 25 KVA ENERGY MANAGEMENT SERIES SWITCHMODE DARLINGTON TRANSISTORS
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MJ10042
MJ10045
MJ10048
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Untitled
Abstract: No abstract text available
Text: JbEtnL-Conauctoi ^Pioaucti, Una. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN PNP MJE2801T MJE2901T . designed for use as output device in complementary audio
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MJE2801T
MJE2901T
30-Watts
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Untitled
Abstract: No abstract text available
Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 MJ10005 FAX: (973) 376-8960 SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode 20 AMPERE NPN SILICON POWER DARLINGTON
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MJ10005
250Vdc,
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MJ-10000
Abstract: No abstract text available
Text: ^E.mi-Condu<itoi ^Pioduch, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON
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MJ10000
MJ10000
MJ-10000
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Teledyne J411-9WP
Abstract: GRF331
Text: Electromechanical Relays Selection Guide Latching RF Non-Latching JAN Surface-Mount Established Reliability 4PST Loopback Environmental Attenuated Switching Solutions Teledyne Relays has been the world’s innovative leader in the manufacture of ultraminiature, hermetically sealed,
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TR0114
Teledyne J411-9WP
GRF331
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Untitled
Abstract: No abstract text available
Text: ^s-mi-donaaatoi £Ptoducts., One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors
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MJ10012
MJH10012
MJ10012
MJH10012
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UC3823
Abstract: No abstract text available
Text: ą UC282Ć1, UC282Ć2, UC282Ć3, UC282ĆADJ, UC382Ć1, UC382Ć2, UC382Ć3, UC382ĆADJ FAST LDO LINEAR REGULATOR SLUS317A – JANUARY 2000 - REVISED MAY 2001 D D D D D D D D Fast Transient Response 10-mA to 3-A Load Current Short Circuit Protection Maximum Dropout of 450-mV at 3-A Load
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UC2821,
UC2822,
UC2823,
UC282ADJ,
UC3821,
UC3822,
UC3823,
UC382ADJ
SLUS317A
10-mA
UC3823
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Untitled
Abstract: No abstract text available
Text: tSstni-Conauctoi Lpi , L/nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10041 MJ10044 MJ10047 26,50, and 100 AMPERE - NPN SILICON POWER DARLINGTON TRANSISTOR 25 kVA ENERGY MANAGEMENT SERIES
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MJ10041
MJ10044
MJ10047
MJ10M1
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2N6421
Abstract: No abstract text available
Text: 20 STERN AVE SPRINGFIELD. NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS . designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers,switching regulators, converters,
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2N6420
2N6421
2N6422
2N6423
2N3583
2N3584
2N3585
2N4240
2N3583
2N3684
2N6421
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digital jukebox
Abstract: No abstract text available
Text: ą UC282Ć1, UC282Ć2, UC282Ć3, UC282ĆADJ, UC382Ć1, UC382Ć2, UC382Ć3, UC382ĆADJ FAST LDO LINEAR REGULATOR SLUS317A – JANUARY 2000 - REVISED MAY 2001 D D D D D D D D Fast Transient Response 10-mA to 3-A Load Current Short Circuit Protection Maximum Dropout of 450-mV at 3-A Load
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UC2821,
UC2822,
UC2823,
UC282ADJ,
UC3821,
UC3822,
UC3823,
UC382ADJ
SLUS317A
10-mA
digital jukebox
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Untitled
Abstract: No abstract text available
Text: tSe.mi-Conciu.cko'i ^Pioducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line-operated equipment requiring high ff.
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MJE3439
O-225AA
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Untitled
Abstract: No abstract text available
Text: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MFE930 MFE960 MFE990 2.0 AMPERE N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTOR N-CHANNEL TMOS FET These TMOS FETs are designed for high-speed switching applications such as switching power supplies, CMOS logic, microprocessor or TTL-to-high current interface and line drivers.
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MFE930
MFE960
MFE990
MFE960
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MTM55N10
Abstract: No abstract text available
Text: fy«_/ ^smi-donauctoi LProducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM55N10 MTM60N06 55 and 60 AMPERE N-CHANNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
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MTM55N10
MTM60N06
100-C
MTM55N10
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motorola sps transistor
Abstract: 851 MOTOROLA Motorola bipolar transistor 477 motorola transistor mj3001 MJ3001 motorola
Text: MOTOROLA Order this document by MJ2501/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2501 NPN M edium -Power Com plem entary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applica tions. • High DC Current Gain — hFE = 4000 Typ @ lc = 5.0 Ade
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MJ2501/D
MJ2501
MJ3001
81-3-54S7-848S
motorola sps transistor
851 MOTOROLA
Motorola bipolar transistor
477 motorola
transistor mj3001
MJ3001 motorola
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Motorola Power Transistor
Abstract: BD791
Text: MOTOROLA Order this document by BD791/D SEMICONDUCTOR TECHNICAL DATA BD791 NPN Plastic Silicon Power Transistor Motorola Preferred Device . . . designed for low power audio amplifier and low-current, high speed switching appti cations. • High Collector-Emitter Sustaining Voltage —
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BD791/D
BD791
Motorola Power Transistor
BD791
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mj423 motorola
Abstract: mj423
Text: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA MJ423 High-Voltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 4M VOLTS 125 WATTS . . . designed for medium-to-high voltage inverters, converters, regulators and switching circuits.
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MJ423/D
MJ423
mj423 motorola
mj423
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B0159
Abstract: No abstract text available
Text: MOTOROLA Order this document by B0159/0 SEMICONDUCTOR TECHNICAL DATA ESDI 59 Plastic Medium Power NPN Silicon Transistor . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR
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B0159/0
BD159/D
B0159
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2N6059 MOTOROLA
Abstract: 2N6058 MOTOROLA
Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current Gain —
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2N6052/D
2N6058
2N6052,
2N6059
2N6052*
2N6059*
Box5405,
2N6059 MOTOROLA
2N6058 MOTOROLA
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NT 407 F power transistor
Abstract: NT 407 F transistor BD241C-D b0242b
Text: MOTOROLA Order this document by BD241C/D SEMICONDUCTOR TECHNICAL DATA BD241C* PNP Com plem entary Silicon Plastic Power Transistors BD242B BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector-Emitter Saturation Voltage —
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BD241C/D
BD242B
BD241C,
BD242C
BD241C*
BD242B
BD242C*
NT 407 F power transistor
NT 407 F transistor
BD241C-D
b0242b
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJE4343/D SEMICONDUCTOR TECHNICAL DATA NPN MJE4343 High-Voltage — High Power Transistors PNP MJE4353 . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector-Emitter Sustaining Voltage —
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MJE4343/D
JE4343
JE4353
MJE4343
MJE4353
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