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    200 HN Search Results

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    200 HN Price and Stock

    INDUSTRIALEMART UTS1200H-NG0-1200A-3P-LO-UL

    MCCB 3-POLE 1200A 65kA@480VAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UTS1200H-NG0-1200A-3P-LO-UL 65 1
    • 1 $4623.57
    • 10 $4623.57
    • 100 $4623.57
    • 1000 $4623.57
    • 10000 $4623.57
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    INDUSTRIALEMART UTS1200H-NG0-1200A-3P-LL-UL

    MCCB 3-POLE 1200A 65kA@480VAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UTS1200H-NG0-1200A-3P-LL-UL 34 1
    • 1 $5055.89
    • 10 $5055.89
    • 100 $5055.89
    • 1000 $5055.89
    • 10000 $5055.89
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    INDUSTRIALEMART UTS1200H-NG0-1000A-3P-LL-UL

    MCCB 3-POLE 1000A 65kA@480VAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UTS1200H-NG0-1000A-3P-LL-UL 18 1
    • 1 $5055.89
    • 10 $5055.89
    • 100 $5055.89
    • 1000 $5055.89
    • 10000 $5055.89
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    Siemens CFSS5200HN

    SHAFT HD 5 X 200 MM FOR 50K 30A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CFSS5200HN Box 3 1
    • 1 $28.57
    • 10 $24.648
    • 100 $21.2491
    • 1000 $19.14504
    • 10000 $19.14504
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    Siemens CFSS10200HN

    CFS 10 X 200MM OPERATING SHAFT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CFSS10200HN Box 3 1
    • 1 $30.24
    • 10 $26.093
    • 100 $22.4945
    • 1000 $21.199
    • 10000 $21.199
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    RS CFSS10200HN Bulk 1 1
    • 1 $32.96
    • 10 $31.31
    • 100 $26.37
    • 1000 $26.37
    • 10000 $26.37
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    200 HN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BF 194 transistor

    Abstract: BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81
    Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 1 A inTO -39 ( - T O - 5 ) metal case Type Maximum ratings C haracteristics at Tamb f'Ù (ñ ) T , = 1am b 25 °C T = ÍÍ5 °C c a se (Tcase = 100 °C) T ,°C 200 200 200 200 200 200


    OCR Scan     		BSY81 BSY82 BFY50 BFY51 BF 194 transistor BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B BSY82 BFY50 BFY51 BFY52 BSY81 PDF

    b20 100 transister

    Abstract: Z1312 sis650 U57A C816 C817 ac345 QT1608RL060HC-3A M961 uniwill
    Text: A B C D E IERR is output pin , so if SIS650 no this input , it can open. GTL+_STPCLK# R32 1K GTL+_SMI# R393 1K 200 GTL+_CPUSLP# R417 1K 200 GTL+_INIT# R33 1K 200 GTL+_IGNNE# R75 1K 200 GTL+_A20M# R396 1K 200 GTL+_IERR# R34 1K GTL+_DPSLP# R119 1K 200 GTL+_INTR


    Original     		SIS650 N243SAR31129 N243SA b20 100 transister Z1312 U57A C816 C817 ac345 QT1608RL060HC-3A M961 uniwill PDF

    4558 dd

    Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
    Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300


    OCR Scan     		1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN PDF

    nanalem

    Abstract: nana HNC200
    Text: Current Transducer HNC- 200 . 300P IPN = 200 . 300 A For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data Primary nominal


    Original     		50/60Hz, nanalem nana HNC200 PDF

    27512

    Abstract: 27512-170V05 27512-200V10 HN27512G-25 HN27512G-30 M5L27512K-17 M5L27512K-2 TM27512AD-12 TM27512AD-20 TM27512AD-25
    Text: - 122 2 7 5 12 m * ít * •i&mw CC X4 », * TAAC max ns) TCAC as y (ns) T0H max (ns) TOE max (ns) TOD max (ns) 250 100 60 27512 INTEL 0 '70 — 250 27512-2 INTEL 0—70 200 200 75 27512-3 INTEL 0—-70 300 300 120 27512-20 INTEL 0—70 200 200 75 27512-25


    OCR Scan     		28PIN 27512 27512-170V05 27512-200V10 HN27512G-25 HN27512G-30 M5L27512K-17 M5L27512K-2 TM27512AD-12 TM27512AD-20 TM27512AD-25 PDF

    HR-6

    Abstract: rectifier diode 2596 Hirect Hirect diode "RECTIFIER DIODE"
    Text: Rectifier Diode SXXHN/HR6 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 2 V mA 6 A 9.5 A 200 A 200 A 2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS IF(AV)


    Original     		1300C HR-6 rectifier diode 2596 Hirect Hirect diode "RECTIFIER DIODE" PDF

    HIT640

    Abstract: HIT225 HIT425 HNT625
    Text: MAXIMUM RATINGS SYMBOL VDRM DEVICE NUMBERS UNITS ISOLATED Repetitive Peak Off-State Voltage 1 Gate Open, and T J = 110° C VDRM 200 400 600 HIT216 HIT416 HIT616 HIT225 HIT425 HIT625 HIT240 HIT440 HIT640 NONISOLATED 200 400 600 VOLT HNT216 HNT416 HNT616 HNT225


    Original     		HIT216 HIT416 HIT616 HNT216 HNT416 HNT616 HIT225 HIT425 HIT625 HNT225 HIT640 HNT625 PDF

    1271a

    Abstract: P 1271A ND3048 ND3049-3D ND3049-5E ND3050-3D ND3050-5E SVC201SPA SVC201Y SVC202
    Text: - & s ND3048-5E ND3049— 3D ND3049-5E ND3050-3D ND30S0-5E N D31 3 6 1 -3D # « mm * * £ ft Vr m Vr (m W) (V) (V) P Tan 200 25 0. 7 Bis 200 25 4.0 Tun 200 25 Tun 200 Tun max V r (V) min typ max VI (V) V2 (V) 50 6 50 0. 23 6 6 50 0. 6 6 50 0. 6 6 6 50 0.


    OCR Scan     		ND3048â 4000typ ND3049-3D 1600typ ND3049-5E ND3050-3D 4400typ ND3050-5E 1271a P 1271A ND3048 SVC201SPA SVC201Y SVC202 PDF

    GES6220

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Type @ 1 0 m A V Min. 1 60 GES5822 NP hl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 200 200 120 200 300 40 40 25 25 25 50 00 00 OB 500 800 300 300


    OCR Scan     		GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES5447 GES6220 GES6001 PDF

    TR 3904 HFE 100-300 SM

    Abstract: itt 3904 2N 3904 h2 c 2n3904, itt GES5822 GES5823 GES5824 GES5825 GES5826 GES5827
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10m A V Min. 1I •I m 00 00 60 00 «0 200 200 120 200 300 GES5827 NPft GES5828 GES6000 N M GES6001 GES6002 50 00 00 OB WS 500 800 300 300 500 NP» mp un 40 40 25 25 25 PHP NP* WM»


    OCR Scan     		GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 r-04mi TR 3904 HFE 100-300 SM itt 3904 2N 3904 h2 c 2n3904, itt PDF

    Untitled

    Abstract: No abstract text available
    Text: V ishay I n tertech n olo g y, I n c . I INNOVAT AND TEC O L OGY TJ3-HT N HN INDUCTORS O 19 62-2012 Inductors - High Temperature Up to 200 ˚C High-Current, High-Temperature Toroidal Inductor FEATURES • • • • • • High temperature rating to 200 ºC


    Original     		04-Mar-08 VMN-PT0115-1203 PDF

    UPD800261F1-523-HN2-A

    Abstract: UPD800261F1 ARM946E-S ERTEC200 uPD800261F1-523-HN2 P-FBGA304
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD800261 ERTEC 200 Enhanced Real-Time Ethernet Controller with 32-bit RISC CPU Core DESCRIPTION ERTEC 200 is a powerful communication block for development of industrial Ethernet devices. ERTEC 200 contains a 32-bit RISC processor, an external memory interface with SDRAM and SRAM controller, an LBU interface, a 2-channel real-time Ethernet interface with integrated PHYs, synchronous and


    Original     		PD800261 32-bit 304-pin A17989EE1V1DS00 UPD800261F1-523-HN2-A UPD800261F1 ARM946E-S ERTEC200 uPD800261F1-523-HN2 P-FBGA304 PDF

    UPD800261F1-523-HN2-A

    Abstract: UPD800261F1 A1798 ertec ARM946E-S ERTEC200 F1A12 uPD800261F1-523-HN2 UPD800261F1-5
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD800261 ERTEC 200 Enhanced Real-Time Ethernet Controller with 32-bit RISC CPU Core DESCRIPTION ERTEC 200 is a powerful communication block for development of PROFINET IO devices. ERTEC 200 contains a 32-bit RISC processor, an external memory interface with SDRAM and SRAM controller, an LBU interface, a 2-channel real-time Ethernet interface with integrated PHYs, synchronous and


    Original     		PD800261 32-bit 304-pin B52-2886-9022/9044 UPD800261F1-523-HN2-A UPD800261F1 A1798 ertec ARM946E-S ERTEC200 F1A12 uPD800261F1-523-HN2 UPD800261F1-5 PDF

    upd800261f1-816-hn2-a

    Abstract: uPD800261 A17988EE2V0UM00 UPD800261F1-816 A17989EE2V0DS00 UPD800261F1816HN2A ARM946E-S be1d P-FBGA304 ERTEC200
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD800261 ERTEC 200 Enhanced Real-Time Ethernet Controller with 32-bit RISC CPU Core DESCRIPTION ERTEC 200 is a powerful communication block for development of industrial Ethernet devices. ERTEC 200 contains a 32-bit RISC processor, an external memory interface with SDRAM and SRAM controller, an LBU interface, a 2-channel real-time Ethernet interface with integrated PHYs, synchronous and


    Original     		PD800261 32-bit 304-pin A17989EE2V0DS00 upd800261f1-816-hn2-a uPD800261 A17988EE2V0UM00 UPD800261F1-816 A17989EE2V0DS00 UPD800261F1816HN2A ARM946E-S be1d P-FBGA304 ERTEC200 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN62328B Series Preliminary 8M 1M x 8-b tt M ask RO M • S1E O ESC B m O H » " ', ',< ,b S n 3 H ITA C H I/ ‘H” 7 7 5 " 378 ■ ■ Access Time 150 ns 200 ns 150ns 200 ns Package 32-pin Plastic DIP (DP-32) 32-lead Plastic SOP (FP-32D) PIN DESCRIPTION


    OCR Scan     		HN62328B 150ns 32-pin DP-32) 32-lead FP-32D) HN62328BP HN62328BF HN62328BP-15 HN62328BP-20 PDF

    O1DLF3KG

    Abstract: O1D100 45128 ifm laser sensors mttf photoelectric laser sensors mttf FSP1 45128 ifm O1D100
    Text: Photoelectric sensors O1D100 O1DLF3KG Optical distance sensor Connector Visible laser light, protection class 2 laser 4-digit alphanumeric display Measuring range 0.2.10 m Range referred to white paper 200 x 200 mm, 90 % remission Application 0.19 m


    Original     		O1D100 O1D100 O1DLF3KG 45128 ifm laser sensors mttf photoelectric laser sensors mttf FSP1 45128 ifm O1D100 PDF

    CXC574

    Abstract: PCN0851 PCN076 PCN074
    Text: Stud/Flat Base Types Type Vrrm Range ’ f AV at Tcase Note (3) 100°C (V) (A) 45 200 - 400 SMxF*CN070-i ’ I 2 OOÌÌOO SMxPCN070-2 200-1000 SMXPCN074 200-1000 ‘ (A) (MC) 47(58°C) - 30(1I7°C) flS(45SC) Ì18(8°C) 1 N 3 9 0 9-1 3 '3 SMXPCN046 Typica I Reven;e Recovered C harge Q raand


    OCR Scan     		1N3899-03 SMXPCN046 Vr510V CXC624 CXC824 CXC915 CXC924 CXC864 CXC968 CXC974 CXC574 PCN0851 PCN076 PCN074 PDF

    Untitled

    Abstract: No abstract text available
    Text: C 146 S Gestanzte Einzelkontakte Stamped single contacts 57 + Gestanzte Bandkontakte für Crimpzangen Stamped contacts on reel for hand crimping tools Gestanzte Bandkontakte für Crimpmaschinen Stamped contacts on reel for crimp machines 200 / 100 Stück 200 / 100 pcs


    Original     		PDF

    transistor E 13009

    Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
    Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009 PDF

    Hirect

    Abstract: 2596 HIND RECTIFIER
    Text: Rectifier Diode SXXHNS/HRS201 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 30 V mA 200 A 300 A 3600 A 64.8 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS


    Original     		SXXHNS/HRS201 1300C June-2008 Hirect 2596 HIND RECTIFIER PDF

    419V

    Abstract: MC12100
    Text: g MOTOROLA 200 M Hz V o ltage Controlled M ultivibrator • High Frequency VCM Ideal fo r PLL Applications 200 MHz VOLTAGE CONTROLLED MULTIVIBRATOR • Single External R esistor D eterm ines Center Frequency; Additional R esistor Determ ines f/V Sensitivity


    OCR Scan     		20-Lead MC12100 419V PDF

    Untitled

    Abstract: No abstract text available
    Text: Bipolar Transistors Switching Transistors NPN − MMBT3904WT1 − MMBT2222AWT1 MMBT4401WT1 − MMBT3904TT1 − MMBT2222ATT1 PNP MMBT2907AWT1 − MMBT3906WT1 − − MMBT4403WT1 − MMBT3906TT1 − V BR CEO IC mA Max Min 60 40 40 40 40 40 600 200 200 600 600


    Original     		MMBT3904WT1 MMBT2222AWT1 MMBT4401WT1 MMBT2907AWT1 MMBT3906WT1 MMBT4403WT1 SC-70, OT-323 MMBT3904TT1 MMBT3906TT1 PDF

    75a5

    Abstract: 48F010-200 47F010-200 47F010-250 47F010-300 48F010-250 48F010-300 AT29C010-12 AT29C010-20 AT29C010-25
    Text: - 158 — 28 F O 1O ¥ 7. 'f 7 f* > VDD as -h /m %. % «i ns 0-71) 200 200 75 50 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 47F010-250 SEEQ 0-70 250 250 100 60 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 (*C> TOD •ax (ns) 1 A SEEQ 45 TOH US 47F01Q-200


    OCR Scan     		47F010-200 47F010-250 47F010-300 48F010-200 48F010-250 28F010( 75a5 48F010-300 AT29C010-12 AT29C010-20 AT29C010-25 PDF

    0p200

    Abstract: dac-8212 op amp 725 LM158 LT1013 OP-14 OP200 OP-200 OP200AZ OP-221
    Text: Dual Low Offset, Low Power Operational Amplifier 0P200 ANALOG DEVICES FEATURES GENERAL DESCRIPTION • • The OP-200 is the first m onolithic dual operational amplifier to offer OP-77 type precision performance. Available in the industry standard 8-pin pinout, the OP-200 combines precision


    OCR Scan     		OP200 75/iV 000V/mV 11nV/\/Hz OP-14, OP-221, LM158, MC1458/1558, LT1013 OP-200 0p200 dac-8212 op amp 725 LM158 OP-14 OP200 OP200AZ OP-221 PDF